An Enhanced Color Shift Keying Modulation Scheme for High-Speed Wireless Visible Light CommunicationsSINGH, Ravinder; O'FARRELL, Timothy; DAVID, John P. R et al.Journal of lightwave technology. 2014, Vol 32, Num 13-16, pp 2582-2592, issn 0733-8724, 11 p.Article

Effects of ionization velocity and dead space on avalanche photodiode bit error rateGROVES, Chris; DAVID, John P. R.IEEE transactions on communications. 2007, Vol 55, Num 11, pp 2152-2158, issn 0090-6778, 7 p.Article

The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengthsCHEE HING TAN; MARSHALL, Andrew; STEER, Matthew J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7355, issn 0277-786X, isbn 978-0-8194-7629-6 0-8194-7629-3, 1Vol, 73550Z.1-73550Z.6Conference Paper

Fabrication of InAs Photodiodes with reduced surface leakage currentMARSHALL, Andrew R. J; CHEE HING TAN; DAVID, John P. R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67400I.1-67400I.7, issn 0277-786X, isbn 978-0-8194-6898-7Conference Paper

Impact Ionization in InAs Electron Avalanche PhotodiodesMARSHALL, Andrew R. J; DAVID, John P. R; CHEE HING TAN et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2631-2638, issn 0018-9383, 8 p.Article

Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser StructuresHASBULLAH, Nurul F; JO SHIEN NG; LIU, Hui-Yun et al.IEEE journal of quantum electronics. 2009, Vol 45, Num 1-2, pp 79-85, issn 0018-9197, 7 p.Article

Impact Ionization Coefficients in 4H-SiC : Silicon carbide devices and technologyLOH, W. S; NG, B. K; NG, J. S et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 1984-1990, issn 0018-9383, 7 p.Article

Molecular beam epitaxy growth of GaAsBi using As₂ and As₄RICHARDS, Robert D; BASTIMAN, Faebian; HUNTER, Christopher J et al.Journal of crystal growth. 2014, Vol 390, pp 120-124, issn 0022-0248, 5 p.Article

Effects of Dead Space on Avalanche Gain Distribution of X-Ray Avalanche PhotodiodesGOMES, Rajiv B; CHEE HING TAN; LEES, John E et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1063-1067, issn 0018-9383, 5 p.Article

The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared PhotodetectorsCHEE HING TAN; MUN, Souye C. Liew Tat; VINES, Peter et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67400K.1-67400K.11, issn 0277-786X, isbn 978-0-8194-6898-7Conference Paper

Design and performance of an InGaAs-InP single-photon avalanche diode detectorPELLEGRINI, Sara; WARBURTON, Ryan E; TAN, Lionel J. J et al.IEEE journal of quantum electronics. 2006, Vol 42, Num 3-4, pp 397-403, issn 0018-9197, 7 p.Article

Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise MeasurementGREEN, James E; WEI SUN LOH; MARSHALL, Andrew R. J et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1030-1036, issn 0018-9383, 7 p.Article

Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAsTAN, Lionel J. J; WAI MUN SOONG; DAVID, John P. R et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 103-106, issn 0018-9383, 4 p.Article

Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectorsSIEW LI TAN; YU LING GOH; SANKHA DIP DAS et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7838, issn 0277-786X, isbn 978-0-8194-8356-0, 783814.1-783814.8Conference Paper

Impact Ionization Coefficients in Al_0.52In_0.48PONG, Jennifer S. L; NG, Jo S; KRYSA, Andrey B et al.IEEE electron device letters. 2011, Vol 32, Num 11, pp 1528-1530, issn 0741-3106, 3 p.Article

InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 μmONG, Daniel S. G; JO SHIEN NG; YU LING GOH et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 2, pp 486-489, issn 0018-9383, 4 p.Article

A Theoretical Comparison of the Breakdown Behavior of In_0.52Al_0.48As and InP Near-Infrared Single-Photon Avalanche PhotodiodesSOUYE CHEONG LIEW TAT MUN; CHEE HING TAN; DIMLER, Simon J et al.IEEE journal of quantum electronics. 2009, Vol 45, Num 5-6, pp 566-571, issn 0018-9197, 6 p.Article

Excess noise characteristics of single heterojunction Al_xGa_1-xAs-GaAs Avalanche PhotodiodesGROVES, Christopher; DAVID, John P. R; ROBSON, Peter N et al.SPIE proceedings series. 2004, pp 426-433, isbn 0-8194-5374-9, 8 p.Conference Paper

Avalanche Gain and Energy Resolution of Semiconductor X-ray DetectorsCHEE HING TAN; GOMES, Rajiv B; DAVID, John P. R et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 6, pp 1696-1701, issn 0018-9383, 6 p.Article

GaInNAsSb/GaAs Photodiodes for Long-Wavelength ApplicationsSIEW LI TAN; SHIYONG ZHANG; ALLAM, Jeremy et al.IEEE electron device letters. 2011, Vol 32, Num 7, pp 919-921, issn 0741-3106, 3 p.Article

Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealingSIEW LI TAN; TAN, Lionel J. J; YU LING GOH et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7726, issn 0277-786X, isbn 978-0-8194-8199-3 0-8194-8199-8, 1Vol, 77261M.1-77261M.8Conference Paper

The development of extremely low noise InAs electron APDs for SWIR active or passive imagingMARSHALL, Andrew R. J; CHEE HING TAN; DAVID, John P. R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72983A.1-72983A.8, 2Conference Paper

Low noise InAs avalanche photodiodes for high sensitivity FPAsMARSHALL, Andrew R. J; CHEE HING TAN; STEER, Matthew J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7113, issn 0277-786X, isbn 978-0-8194-7345-5 0-8194-7345-6, 1Vol, 71130H.1-71130H.8Conference Paper

Stark shift of the spectral response in quantum dots-in-a-well infrared photodetectorsAIVALIOTIS, Pantelis; VUKMIROVIC, Nenad; ZIBIK, Evgeny A et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 18, pp 5537-5540, issn 0022-3727, 4 p.Article