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Scanning capacitance microscope, an in-line non-destructive technique for the SiO2 characterisationBORDONI, F; DE TOMMASIS, R; DI GIACOMO, A et al.SPIE proceedings series. 1998, pp 44-50, isbn 0-8194-2968-6Conference Paper

Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2SANTUCCI, S; LOZZI, L; PASSACANTANDO, M et al.Journal of non-crystalline solids. 1999, Vol 245, pp 224-231, issn 0022-3093Conference Paper

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