Comparative radiation sensitivity study of bulk, wet and dry amorphous SiO₂DEVINE, R. A. B.Journal of non-crystalline solids. 1988, Vol 107, Num 1, pp 41-48, issn 0022-3093Article

The role of activation energy distributions in diffusion related annealing in SiO₂DEVINE, R. A. B.Journal of applied physics. 1985, Vol 58, Num 2, pp 716-719, issn 0021-8979Article

Mechanisms of damage recovery in ion implanted SiO₂DEVINE, R. A. B.Journal of applied physics. 1984, Vol 56, Num 2, pp 563-565, issn 0021-8979Article

Oxygen vacancy creation in SiO₂ through ionization energy depositionDEVINE, R. A. B.Applied physics letters. 1983, Vol 43, Num 11, pp 1056-1058, issn 0003-6951Article

Ion implantation- and radiation-induced structural modifications in amorphous SiO₂DEVINE, R. A. B.Journal of non-crystalline solids. 1993, Vol 152, Num 1, pp 50-58, issn 0022-3093Article

Densification-induced infrared and raman spectra variations of amorphous SiO₂DEVINE, R. A. B.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1988, Vol 6, Num 6, pp 3154-3156, issn 0734-2101Article

The role of activation energy distributions in diffusion related annealing in SiO₂DEVINE, R. A. B.Journal of applied physics. 1985, Vol 58, Num 2, pp 716-719, issn 0021-8979Article

The structure of SiO₂, its defects and radiation hardnessDEVINE, R. A. B.IEEE transactions on nuclear science. 1994, Vol 41, Num 3, pp 452-459, issn 0018-9499Conference Paper

Influence of temperature on defect creation during plasma exposure of SiO₂ filmsDEVINE, R. A. B.Applied physics letters. 1990, Vol 57, Num 24, pp 2564-2566, issn 0003-6951, 3 p.Article

Electrical and spin resonance characteristics of low-temperature plasma-enhanced chemical-vapor-deposited SiO₂DEVINE, R. A. B.Journal of applied physics. 1989, Vol 66, Num 10, pp 4702-4708, issn 0021-8979Article

Radiation induced structural changes in amorphous SiO₂. I: Point defectsDEVINE, R. A. B.Japanese journal of applied physics. 1992, Vol 31, Num 12B, pp 4411-4421, issn 0021-4922, 1Article

Defect reactivation and structural relaxation in deposited amorphous SiO₂DEVINE, R. A. B.Journal of applied physics. 1991, Vol 70, Num 7, pp 3542-3550, issn 0021-8979Article

On the structure of low-temperature PECVD silicon dioxide filmsDEVINE, R. A. B.Journal of electronic materials. 1990, Vol 19, Num 11, pp 1299-1301, issn 0361-5235Article

Radiation-sensitivity enhancement and annealing variation in densified, amorphous SiO₂DEVINE, R. A. B.Physical review. B, Condensed matter. 1987, Vol 35, Num 18, pp 9783-9789, issn 0163-1829Article

Micropores and the role of ring structures at the Si-SiO₂ interfaceDEVINE, R. A. B.Journal of applied physics. 1986, Vol 60, Num 1, pp 468-470, issn 0021-8979Article

Oxygen vacancy annealing in H⁺ implanted SiO₂DEVINE, R. A. B.Journal of applied physics. 1984, Vol 56, Num 4, pp 953-957, issn 0021-8979Article

Motion of hydrogen ions in the proton memoryGIRAULT, V; DEVINE, R. A. B.Journal of non-crystalline solids. 1999, Vol 254, pp 57-65, issn 0022-3093Conference Paper

Photoassisted oxidation of amorphous SiO_xDEVINE, R. A. B; AUVERT, G.Applied physics letters. 1986, Vol 49, Num 23, pp 1605-1607, issn 0003-6951Article

Evidence for a wide continuum of polymorphs in a-SiO₂FIORI, C; DEVINE, R. A. B.Physical review. B, Condensed matter. 1986, Vol 33, Num 4, pp 2972-2974, issn 0163-1829Article

Thermally activated peroxy radical dissociation and annealing in vitreous SiO₂DEVINE, R. A. B; FIORI, C.Journal of applied physics. 1985, Vol 58, Num 9, pp 3368-3372, issn 0021-8979Article

Radiation-induced defects in dense phases of crystalline and amorphous SiO₂DEVINE, R. A. B; HÜBNER, K.Physical review. B, Condensed matter. 1989, Vol 40, Num 10, pp 7281-7283, issn 0163-1829, 3 p.Article

Si-O bond-length modification in pressure-densified amorphous SiO₂DEVINE, R. A. B; ARNDT, J.Physical review. B, Condensed matter. 1987, Vol 35, Num 17, pp 9376-9379, issn 0163-1829Article

Defects in a-SiO₂ deposited from a tetraethoxysilane-oxygen plasmaDEVINE, R. A. B; TISSIER, A.Journal of applied physics. 1991, Vol 69, Num 4, pp 2480-2484, issn 0021-8979, 5 p.Article

Influence of ionizing radiation of predamaged, amorphous SiO₂DEVINE, R. A. B; FIORI, C.Journal of applied physics. 1985, Vol 57, Num 12, pp 5162-5168, issn 0021-8979Article

Dielectric and infrared properties of TiO₂ films containing anatase and rutileBUSANI, T; DEVINE, R. A. B.Semiconductor science and technology. 2005, Vol 20, Num 8, pp 870-875, issn 0268-1242, 6 p.Article