Effects of Crystal Phase Mixing on the Electrical Properties of InAs NanowiresTHELANDER, Claes; CAROFF, Philippe; PLISSARD, Sébastien et al.Nano letters (Print). 2011, Vol 11, Num 6, pp 2424-2429, issn 1530-6984, 6 p.Article

Combining Axial and Radial Nanowire Heterostructures: Radial Esaki Diodes and Tunnel Field-Effect TransistorsDEY, Anil W; SVENSSON, Johannes; EK, Martin et al.Nano letters (Print). 2013, Vol 13, Num 12, pp 5919-5924, issn 1530-6984, 6 p.Article

Single InAs/GaSb Nanowire Low-Power CMOS InverterDEY, Anil W; SVENSSON, Johannes; MATTIAS BORG, B et al.Nano letters (Print). 2012, Vol 12, Num 11, pp 5593-5597, issn 1530-6984, 5 p.Article

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect TransistorsDEY, Anil W; BORG, B. Mattias; GANJIPOUR, Bahram et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 211-213, issn 0741-3106, 3 p.Article

Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal QualityEK, Martin; BORG, B. Mattias; DEY, Anil W et al.Crystal growth & design. 2011, Vol 11, Num 10, pp 4588-4593, issn 1528-7483, 6 p.Article

Electrical properties of GaSb/InAsSb core/ shell nanowiresGANJIPOUR, Bahram; SEPEHRI, Sobhan; DEY, Anil W et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 42, issn 0957-4484, 425201.1-425201.9Article

High-Performance InAs Nanowire MOSFETsDEY, Anil W; THELANDER, Claes; LIND, Erik et al.IEEE electron device letters. 2012, Vol 33, Num 6, pp 791-793, issn 0741-3106, 3 p.Article

High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure NanowiresGANJIPOUR, Bahram; DEY, Anil W; MATTIAS BORG, B et al.Nano letters (Print). 2011, Vol 11, Num 10, pp 4222-4226, issn 1530-6984, 5 p.Article

Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter studyMANDL, Bernhard; DEY, Anil W; STANGL, Julian et al.Journal of crystal growth. 2011, Vol 334, Num 1, pp 51-56, issn 0022-0248, 6 p.Article

Growth Mechanism of Self-Catalyzed Group III—V NanowiresMANDL, Bernhard; STANGL, Julian; HILNER, Emelie et al.Nano letters (Print). 2010, Vol 10, Num 11, pp 4443-4449, issn 1530-6984, 7 p.Article