A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III-V nanowiresDICK, Kimberly A.Progress in crystal growth and characterization of materials. 2008, Vol 54, Num 3-4, pp 138-173, issn 0960-8974, 36 p.Article

Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir EffectDICK, Kimberly A; BOLINSSON, Jessica; MATTIAS BORG, B et al.Nano letters (Print). 2012, Vol 12, Num 6, pp 3200-3206, issn 1530-6984, 7 p.Article

Crystal Phase Engineering in Single InAs NanowiresDICK, Kimberly A; THELANDER, Claes; SAMUELSON, Lars et al.Nano letters (Print). 2010, Vol 10, Num 9, pp 3494-3499, issn 1530-6984, 6 p.Article

Optimization of Au-assisted InAs nanowires grown by MOVPEDICK, Kimberly A; DEPPERT, Knut; SAMUELSON, Lars et al.Journal of crystal growth. 2006, Vol 297, Num 2, pp 326-333, issn 0022-0248, 8 p.Article

Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxyJUN WU; BORG, B. Mattias; JACOBSSON, Daniel et al.Journal of crystal growth. 2013, Vol 383, pp 158-165, issn 0022-0248, 8 p.Article

Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V NanowiresJOHANSSON, Jonas; KARLSSON, Lisa S; DICK, Kimberly A et al.Crystal growth & design. 2009, Vol 9, Num 2, pp 766-773, issn 1528-7483, 8 p.Article

The morphology of axial and branched nanowire heterostructuresDICK, Kimberly A; KODAMBAKA, Suneel; REUTER, Mark C et al.Nano letters (Print). 2007, Vol 7, Num 6, pp 1817-1822, issn 1530-6984, 6 p.Article

A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V FlowLEHMANN, Sebastian; WALLENTIN, Jesper; JACOBSSON, Daniel et al.Nano letters (Print). 2013, Vol 13, Num 9, pp 4099-4105, issn 1530-6984, 7 p.Article

High quality InAs and GaSb thin layers grown on Si (1 1 1)SEPIDEH GORJI GHALAMESTANI; BERG, Martin; DICK, Kimberly A et al.Journal of crystal growth. 2011, Vol 332, Num 1, pp 12-16, issn 0022-0248, 5 p.Article

Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical ModificationDICK, Kimberly A; DEPPERT, Knut; SAMUELSON, Lars et al.Nano letters (Print). 2008, Vol 8, Num 11, pp 4087-4091, issn 1530-6984, 5 p.Article

Strategies To Control Morphology in Hybrid Group III―V/Group IV Heterostructure NanowiresHILLERICH, Karla; DICK, Kimberly A; WEN, Cheng-Yen et al.Nano letters (Print). 2013, Vol 13, Num 3, pp 903-908, issn 1530-6984, 6 p.Article

Epitaxial InP nanowire growth from Cu seed particlesHILLERICH, Karla; MESSING, Maria E; REINE WALLENBERG, L et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 134-137, issn 0022-0248, 4 p.Conference Paper

GaAs/GaSb nanowire heterostructures grown by MOVPEJEPPSSON, Mattias; DICK, Kimberly A; WAGNER, Jakob B et al.Journal of crystal growth. 2008, Vol 310, Num 18, pp 4115-4121, issn 0022-0248, 7 p.Article

Effects of Crystal Phase Mixing on the Electrical Properties of InAs NanowiresTHELANDER, Claes; CAROFF, Philippe; PLISSARD, Sébastien et al.Nano letters (Print). 2011, Vol 11, Num 6, pp 2424-2429, issn 1530-6984, 6 p.Article

Failure of the vapor-liquid-solid mechanism in au-assisted MOVPE growth of InAs nanowiresDICK, Kimberly A; DEPPERT, Knut; MARTENSSON, Thomas et al.Nano letters (Print). 2005, Vol 5, Num 4, pp 761-764, issn 1530-6984, 4 p.Article

Electrical properties of GaSb/InAsSb core/ shell nanowiresGANJIPOUR, Bahram; SEPEHRI, Sobhan; DEY, Anil W et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 42, issn 0957-4484, 425201.1-425201.9Article

High-Performance InAs Nanowire MOSFETsDEY, Anil W; THELANDER, Claes; LIND, Erik et al.IEEE electron device letters. 2012, Vol 33, Num 6, pp 791-793, issn 0741-3106, 3 p.Article

High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure NanowiresGANJIPOUR, Bahram; DEY, Anil W; MATTIAS BORG, B et al.Nano letters (Print). 2011, Vol 11, Num 10, pp 4222-4226, issn 1530-6984, 5 p.Article

Growth of one-dimensional nanostructures in MOVPESEIFERT, Werner; BORGSTRÖM, Magnus; WALLENBERG, L. Reine et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 211-220, issn 0022-0248, 10 p.Conference Paper

Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire ArraysANTTU, Nicklas; LEHMANN, Sebastian; STORM, Kristian et al.Nano letters (Print). 2014, Vol 14, Num 10, pp 5650-5655, issn 1530-6984, 6 p.Article

Large Thermoelectric Power Factor Enhancement Observed in InAs NanowiresWU, Phillip M; GOOTH, Johannes; ZIANNI, Xanthippi et al.Nano letters (Print). 2013, Vol 13, Num 9, pp 4080-4086, issn 1530-6984, 7 p.Article

Self-catalyzed MBE grown GaAs/GaAs_xSb_1―x core―shell nanowires in ZB and WZ crystal structuresGORJI GHALAMESTANI, Sepideh; MAZID MUNSHI, A; DHEERAJ, Dasa L et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 40, issn 0957-4484, 405601.1-405601.6Article

Characterization of GaSb nanowires grown by MOVPEJEPPSSON, Mattias; DICK, Kimberly A; NILSSON, Henrik A et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5119-5122, issn 0022-0248, 4 p.Conference Paper

InAs nanowires grown by MOVPEDICK, Kimberly A; DEPPERT, Knut; SAMUELSON, Lars et al.Journal of crystal growth. 2007, Vol 298, pp 631-634, issn 0022-0248, 4 p.Conference Paper

Growth of GaP nanotree structures by sequential seeding of 1D nanowiresDICK, Kimberly A; DEPPERT, Knut; MARTENSSON, Thomas et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 131-137, issn 0022-0248, 7 p.Conference Paper