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Effects of spatial confinement and layer disorder in photoluminescence of GaAs1―xBix/GaAs heterostructuresMAZUR, Yu I; DOROGAN, V. G; SALAMO, G. J et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 6, issn 0022-3727, 065306.1-065306.8Article

Spectroscopic studies of 2H-PbI2(Mn) layered crystalsMOTSNYI, F. V; DOROGAN, V. G; KOVALYUK, Z. D et al.Physica status solidi. B. Basic research. 2005, Vol 242, Num 12, pp 2427-2432, issn 0370-1972, 6 p.Article

Band Alignment Tailoring of InAs1-xSbx/GaAs Quantum Dots: Control of Type I to Type II TransitionHE, J; REYNER, C. J; MAZUR, Yu. I et al.Nano letters (Print). 2010, Vol 10, Num 8, pp 3052-3056, issn 1530-6984, 5 p.Article

Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1_xBix/GaAs heterostructuresMAZUR, Yu I; DOROGAN, V. G; SALAMO, G. J et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 3, issn 0957-4484, 035702.1-035702.9Article

Temperature driven three-dimensional ordering of InGaAs/GaAs quantum dot superlattices grown under As2 gas fluxLYTVYN, P. M; MAZUR, Yu. I; BENAMARA, M et al.Applied surface science. 2014, Vol 305, pp 689-696, issn 0169-4332, 8 p.Article

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structureLIN, A; LIANG, B. L; DOROGAN, V. G et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 7, issn 0957-4484, 075701.1-075701.6Article

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