The application of surface analytical techniques to silicon technologyDOWSETT, M. G.Fresenius' journal of analytical chemistry. 1991, Vol 341, Num 3-4, pp 224-234, issn 0937-0633Conference Paper

Maximum entropy quantification of SIMS depth profiles : behaviour as a function of primary ion energyALLEN, P. N; DOWSETT, M. G.Surface and interface analysis. 1994, Vol 21, Num 3, pp 206-209, issn 0142-2421Article

Ultra low energy O⁺₂ SIMS depth profiling of superficial poly(CuPc) and Co(II)T(o-NH2)PP monomolecular layersDOWSETT, M. G; MORRIS, R. J. H; ADRIAENS, A et al.Surface and interface analysis. 2013, Vol 45, Num 1, pp 324-328, issn 0142-2421, 5 p.Conference Paper

Application of ultra low energy (ULE) SIMS to emerging diamond technologiesGUZMAN DE LA MATA, B; DOWSETT, M. G; TAJANI, A et al.Surface and interface analysis. 2006, Vol 38, Num 4, pp 422-425, issn 0142-2421, 4 p.Conference Paper

Simultaneous in situ time resolved SR-XRD and corrosion potential analyses to monitor the corrosion on copperLEYSSENS, K; ADRIAENS, A; DOWSETT, M. G et al.Electrochemistry communications. 2005, Vol 7, Num 12, pp 1265-1270, issn 1388-2481, 6 p.Article

SIMS profile quantification by maximum entropy deconvolution : Quantive surface analysisALLEN, P. N; DOWSETT, M. G; COLLINS, R et al.Surface and interface analysis. 1993, Vol 20, Num 8, pp 696-702, issn 0142-2421Conference Paper

Characterization of sharp interfaces and delta doped layers in semiconductors using secondary ion mass spectrometryDOWSETT, M. G; BARLOW, R. D.Analytica chimica acta. 1994, Vol 297, Num 1-2, pp 253-275, issn 0003-2670Article

Physical properties of stannosilicate glassesSEARS, A; HOLLAND, D; DOWSETT, M. G et al.Physics and chemistry of glasses. 2000, Vol 41, Num 1, pp 42-48, issn 0031-9090Article

Experimental study of electrode materials for use in a cold-cathode oxygen dischargeDOWSETT, M. G; PARKER, E. H. C.International journal of mass spectrometry and ion physics. 1983, Vol 52, Num 2-3, pp 299-309, issn 0020-7381Article

Ultra-low energy SIMS study of ultra-shallow boron implants in HPHT diamondDE LA MATA, B. Guzman; DOWSETT, M. G; PALITSIN, V et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 11, pp 2148-2153, issn 0031-8965, 6 p.Conference Paper

Ion, sputter and useful ion yields for accurate quantification of Si_1-xGe_x(O < x < 1) using ultra low energy O₂⁺ SIMSMORRIS, R. J. H; DOWSETT, M. G.Surface and interface analysis. 2011, Vol 43, Num 1-2, pp 543-546, issn 0142-2421, 4 p.Conference Paper

The use of low-energy SIMS (LE-SIMS) for nanoscale fuel cell material developmentMORRIS, R. J. H; FEARN, S; PERKINS, J et al.Surface and interface analysis. 2011, Vol 43, Num 1-2, pp 635-638, issn 0142-2421, 4 p.Conference Paper

Applications of SIMS to cultural heritage studiesADRIAENS, A; DOWSETT, M. G.Applied surface science. 2006, Vol 252, Num 19, pp 7096-7101, issn 0169-4332, 6 p.Conference Paper

Depth profiling using ultra-low-energy secondary ion mass spectrometryDOWSETT, M. G.Applied surface science. 2003, Vol 203-04, pp 5-12, issn 0169-4332, 8 p.Conference Paper

On determining accurate positions, separations, and internal profiles for delta layersDOWSETT, M. G; KENY, J. H; ROWLANDS, G et al.Applied surface science. 2003, Vol 203-04, pp 273-276, issn 0169-4332, 4 p.Conference Paper

Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°CPOWELL, A. R; KUBIAK, R. A. A; WHALL, T. E et al.Journal of crystal growth. 1991, Vol 111, Num 1-4, pp 907-911, issn 0022-0248Conference Paper

Analysis of the interactions between He⁺ ions and transition metal surfaces using co-axial impact collision ion scattering spectroscopyWALKER, M; BROWN, M. G; DRAXLER, M et al.Surface science. 2011, Vol 605, Num 1-2, pp 107-115, issn 0039-6028, 9 p.Article

Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materialsMORRIS, R. J. H; DOWSETT, M. G; CHANG, R. J. H et al.Applied surface science. 2006, Vol 252, Num 19, pp 7221-7223, issn 0169-4332, 3 p.Conference Paper

A floating low energy electron gun (FLEG) for charge compensation in SIMS and other applicationsGIBBONS, R; DOWSETT, M. G; KELLY, J et al.Applied surface science. 2003, Vol 203-04, pp 343-347, issn 0169-4332, 5 p.Conference Paper

The energy spectra of secondary ions sputtered from Si and SiGe by ultra-low-energy primary ionsBELLINGHAM, J; DOWSETT, M. G.Applied surface science. 2003, Vol 203-04, pp 130-133, issn 0169-4332, 4 p.Conference Paper

Study of altered layer formation in O₂⁺-bombarded SiGe alloys using a novel crossed bevel techniqueWILKINSON, D. K; EL-GOMATI, M; PRUTTON, M et al.Surface and interface analysis. 1999, Vol 27, Num 9, pp 840-848, issn 0142-2421Article

Two dimensional profiling using secondary ion mass spectrometryDOWSETT, M. G; COOKE, G. A.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 353-357, issn 0734-211XConference Paper

Diffusion of boron in heavily doped n- and p-type siliconWILLOUGHBY, A. F. W; EVANS, A. G. R; CHAMP, P et al.Journal of applied physics. 1986, Vol 59, Num 7, pp 2392-2397, issn 0021-8979Article

Sputter yields in diamond bombarded by ultra low energy ionsDE LA MATA, B. Guzman; DOWSETT, M. G; TWITCHEN, D et al.Applied surface science. 2006, Vol 252, Num 19, pp 6444-6447, issn 0169-4332, 4 p.Conference Paper

Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si_1-xGe_x alloy layersDOWSETT, M. G; MORRIS, R; CHOU, Pei-Fen et al.Applied surface science. 2003, Vol 203-04, pp 500-503, issn 0169-4332, 4 p.Conference Paper