Ultra-low-noise characteristics of millimeter-wave high electron mobility transistorsDUH, K.-H. G; LIU, S. M. J; LESTER, L. F et al.IEEE electron device letters. 1988, Vol 9, Num 10, pp 521-523, issn 0741-3106Article

W-Band low-noise InAlAs/InGaAs lattice-matched HEMT'sCHAO, P. C; TESSMER, A. J; DUH, K.-H. G et al.IEEE electron device letters. 1990, Vol 11, Num 1, pp 59-62, issn 0741-3106Article

0.1-μm gate-length pseudomorphic HEMT'sCHAO, P. C; TIBERIO, R. C; DUH, K.-H. G et al.IEEE electron device letters. 1987, Vol 8, Num 10, pp 489-491, issn 0741-3106Article

Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistorHENDERSON, T; AKSUN, M. I; PENG, C. K et al.IEEE electron device letters. 1986, Vol 7, Num 12, pp 649-651, issn 0741-3106Article

A super low-noise 0.1 μm T-gate InAlAs-InGaAs-InP HEMTDUH, K. H. G; CHAO, P. C; LIU, S. M. J et al.IEEE microwave and guided wave letters. 1991, Vol 1, Num 5, pp 114-116Article

94 GHz transistor amplification using an HEMTSMITH, P. M; CHAO, P. C; DUH, K. H. G et al.Electronics Letters. 1989, Vol 25, pp S62-S63, issn 0013-5194, no. specArticle

Pseudomorphic InGaAs high electron mobility transistorsBALLINGALL, J. M; MARTIN, P. A; MAZUROWSKI, J et al.Thin solid films. 1993, Vol 231, Num 1-2, pp 95-106, issn 0040-6090Article

60 GHz low-noise high-electron-mobility transistorsDUH, K. H. G; CHAO, P. C; SMITH, P. M et al.Electronics Letters. 1986, Vol 22, Num 12, pp 647-649, issn 0013-5194Article

60 GHz low-noise high-electron-mobility transistorsDUH, K. H. G; CHAO, P. C; SMITH, P. M et al.Electronics Letters. 1986, Vol 22, Num 12, pp 647-649, issn 0013-5194Article

Millimeter-wave low-noise high electron mobility transistorsCHAO, P. C; PALMATEER, S. C; SMITH, P. M et al.IEEE electron device letters. 1985, Vol 6, Num 10, pp 531-533, issn 0741-3106Article

W-band high efficiency InP-based power HEMT with 600 GHz f_maxSMITH, P. M; LIU, S.-M. J; KAO, M.-Y et al.IEEE microwave and guided wave letters. 1995, Vol 5, Num 7, pp 230-232, issn 1051-8207Article

Very low-noise Al_0•3Ga_0•7As/Ga_0•65In_0•35As/GaAs single quantum-well pseudomorphic HEMTsCHAO, P. C; HO, P; DUH, K. H. G et al.Electronics Letters. 1990, Vol 26, Num 1, pp 27-28, issn 0013-5194, 2 p.Article

Very high power-added efficiency and low-noise 0.15-μm gate-length pseudomorphic HEMT'sMING-YIH KAO; SMITH, P. M; PIN HO et al.IEEE electron device letters. 1989, Vol 10, Num 12, pp 580-582, issn 0741-3106Article

Ultra-low-noise cryogenic high-electron-mobility transistorDUH, K. H. G; POSPIESZALSKI, M. W; KOPP, W. F et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 3, pp 249-256, issn 0018-9383Article

32-GHZ cryogenically cooled HEMT low-noise amplifiersDUH, K. H. G; KOPP, W. F; HO, P et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1528-1535, issn 0018-9383, 8 p.Article

94 GHz low-noise HEMTCHAO, P. C; DUH, K. H. G; HO, P et al.Electronics Letters. 1989, Vol 25, Num 8, pp 504-505, issn 0013-5194, 2 p.Article

High-performance Ka-band and V-band HEMT low-noise amplifiersDUH, K. H. G; PANE-CHANE CHAO; SMITH, P. M et al.IEEE transactions on microwave theory and techniques. 1988, Vol 36, Num 12, pp 1598-1603, issn 0018-9480Article

Extremely high gain 0•15μm gate-length InAlAs/InGaAs/InP HEMTsHO, P; KAO, M. Y; CHAO, P. C et al.Electronics Letters. 1991, Vol 27, Num 4, pp 325-327, issn 0013-5194, 3 p.Article

DC and microwave characteristics of sub-0.1-μm gate-length planar-doped pseudomorphic HEMT'sPANE-CHANE CHAO; SHUR, M. S; TIBERIO, R. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 461-473, issn 0018-9383, 13 p.Article

Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substratesAKSUN, M. I; MORKOC, H; LESTER, L. F et al.Applied physics letters. 1986, Vol 49, Num 24, pp 1654-1655, issn 0003-6951Article

Improved device performance by migration-enhanced epitaxyPIN HO; WANG, S. C; YU, T et al.Journal of crystal growth. 1991, Vol 111, Num 1-4, pp 233-238, issn 0022-0248Conference Paper

Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain PerformanceDONG XU; KONG, Wendell M. T; SCHMANSKI, B et al.IEEE electron device letters. 2008, Vol 29, Num 1, pp 4-7, issn 0741-3106, 4 p.Article