Hybrid Plasma-Sprayed Thermal Barrier Coatings Using Powder and Solution Precursor FeedstockJOSHI, S. V; SIVAKUMAR, G; RAGHUVEER, T et al.Journal of thermal spray technology. 2014, Vol 23, Num 4, pp 616-624, issn 1059-9630, 9 p.Conference Paper

Ion-beam induced structural transformations in hydrogenated microcrystalline siliconYEDAVE, S. N; OGALE, S. B; DUSANE, R. O et al.Journal of applied physics. 1992, Vol 71, Num 8, pp 3773-3779, issn 0021-8979Article

Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interfaceKSHIRSAGAR, S. T; RAJARSHI, S. V; DUSANE, R. O et al.Applied physics letters. 1987, Vol 51, Num 24, pp 2019-2021, issn 0003-6951Article

Hydrogenated microcrystalline silicon films produced at low temperature by the hot wire deposition methodDUSANE, R. O; DUSANE, S. R; BHIDE, V. G et al.Applied physics letters. 1993, Vol 63, Num 16, pp 2201-2203, issn 0003-6951Article

Opportunities for new materials synthesis by hot wire chemical vapor processDUSANE, R. O.Thin solid films. 2011, Vol 519, Num 14, pp 4555-4560, issn 0040-6090, 6 p.Conference Paper

Tribological behaviour and residual stress of electrodeposited Ni/Cu multilayer films on stainless steel substrateGHOSH, S. K; LIMAYE, P. K; SWAIN, B. P et al.Surface & coatings technology. 2007, Vol 201, Num 8, pp 4609-4618, issn 0257-8972, 10 p.Article

Thermodynamic analysis of gas phase chemistry in hot wire chemical vapor deposition of a-Si:H and μc-Si:HADHIKARI, Subhra; VISWANATHAN, N. N; DUSANE, R. O et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 928-932, issn 0022-3093, 5 p.Conference Paper

Improved pitting corrosion behaviour of electrodeposited nanocrystalline Ni-Cu alloys in 3.0 wt.% NaCl solutionGHOSH, S. K; DEY, G. K; DUSANE, R. O et al.Journal of alloys and compounds. 2006, Vol 426, Num 1-2, pp 235-243, issn 0925-8388, 9 p.Article

Dependence of effective doping on structural order in hydrogenated amorphous siliconDUSANE, R. O; SUVARNA BABRAS; JADKAR, S. R et al.Solid state communications. 1991, Vol 77, Num 3, pp 195-197, issn 0038-1098, 3 p.Article

Effect of RF power on the structure and related gap states in hydrogenated amorphous siliconBABRAS, S; RAJARSHI, S. V; DUSANE, R. O et al.Journal of non-crystalline solids. 1990, Vol 119, Num 3, pp 342-346, issn 0022-3093, 5 p.Article

Revisiting the B-factor variation in a-SiC:H deposited by HWCVDSWAIN, Bibhu P; PATIL, Samadhan B; KUMBHAR, Alka et al.Thin solid films. 2003, Vol 430, Num 1-2, pp 186-188, issn 0040-6090, 3 p.Conference Paper

Reliability issues of ultra thin silicon nitride (a-SiN:H) by hot wire CVD for deep sub-micron CMOS technologiesWAGHMARE, P. C; PATIL, S. B; KUMBHAR, A et al.SPIE proceedings series. 2002, pp 1418-1420, isbn 0-8194-4500-2, 2VolConference Paper

Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetyleneKUMBHAR, Alka; PATIL, Samadhan B; KUMAR, Sanjay et al.Thin solid films. 2001, Vol 395, Num 1-2, pp 244-248, issn 0040-6090Conference Paper

Highly conducting doped microcrystalline silicon (μc-Si:H) at very low substrate temperature by Cat-CVDDUSANE, R. O; DIEHL, Frank; WEBER, U et al.Thin solid films. 2001, Vol 395, Num 1-2, pp 202-205, issn 0040-6090Conference Paper

Positron-lifetimes studies of hydrogenated amorphous siliconBHIDE, V. G; DUSANE, R. O; RAJARSHI, S. V et al.Journal of applied physics. 1987, Vol 62, Num 1, pp 108-116, issn 0021-8979Article

Internal stress in Cat-CVD microcrystalline Si:H thin filmsSAHU, Laxmi; KALE, Nitin; KULKAMI, Nilesh et al.Thin solid films. 2006, Vol 501, Num 1-2, pp 117-120, issn 0040-6090, 4 p.Conference Paper

Potential of Cat-CVD deposited a-SiC:H as diffusion barrier layer on low-k HSQ films for ULSISUNIL KUMAR SINGH; KUMBHAR, Alka A; KOTHARI, Mayur et al.Thin solid films. 2006, Vol 501, Num 1-2, pp 318-321, issn 0040-6090, 4 p.Conference Paper

Microcrystalline single and double junction silicon based solar cells entirely prepared by HWCVD on textured zinc oxide substrateKUMAR, P; KUPICH, M; BOCK, W et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1855-1858, issn 0022-3093, 4 p.Conference Paper

Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVDPATIL, Samadhan B; KUMBHAR, Alka A; SARASWAT, Shweta et al.Thin solid films. 2003, Vol 430, Num 1-2, pp 257-260, issn 0040-6090, 4 p.Conference Paper

Is the nucleation and coalescence behavior in the growth of a-Si:H films prepared by the Cat-CVD different?DUSANE, R. O; BAUER, S; SCHRÖDER, B et al.Thin solid films. 2001, Vol 395, Num 1-2, pp 121-124, issn 0040-6090Conference Paper

Low temperature silicon nitride deposited by Cat-CVD for deep submicron metal-oxide-semiconductor devicesPATIL, Samadhan B; KUMBHAR, Alka; WAGHMARE, Parag et al.Thin solid films. 2001, Vol 395, Num 1-2, pp 270-274, issn 0040-6090Conference Paper

Effect of local structural order on the doping in hydrogenated amorphous silicon (a - Si:H)DUSANE, R. O; DUSANE, S. R; BHIDE, V. G et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 115-118, issn 0022-3093, 1Conference Paper

Reduction in surface recombination through hydrogen and 1-heptene passivated silicon nanocrystals film on silicon solar cellsRAJESH, Ch; PRAMOD, M. R; PAIL, Sumati et al.Solar energy. 2012, Vol 86, Num 1, pp 489-495, issn 0038-092X, 7 p.Article

Development of low temperature RF magnetron sputtered ITO films on flexible substrateMUNESHWAR, T. P; VARMA, V; MESHRAM, N et al.Solar energy materials and solar cells. 2010, Vol 94, Num 9, pp 1448-1450, issn 0927-0248, 3 p.Conference Paper

High deposition rate device quality a-Si:H films at low substrate temperature by HWCVD techniqueSONI, S. K; PHATAK, Anup; DUSANE, R. O et al.Solar energy materials and solar cells. 2010, Vol 94, Num 9, pp 1512-1515, issn 0927-0248, 4 p.Conference Paper