au.\*:("EON, D")
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Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cellsCHOUFFOT, R; IBRAHIM, S; BRÜGGEMANN, R et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2416-2420, issn 0022-3093, 5 p.Conference Paper
Patterning of narrow porous SiOCH trenches using a TiN hard maskDARNON, M; CHEVOLLEAU, T; TORRES, J et al.Microelectronic engineering. 2008, Vol 85, Num 11, pp 2226-2235, issn 0167-9317, 10 p.Article
La satisfaction des patients hospitalisés à l'Assistance Publique― Hôpitaux de Paris = The satisfaction of hospitalized patients in «Assistance Publique des Hôpitaux de Paris»PERRET, F; HOCQUAUX, C; FREYSSELINARD, C et al.Journal de la Société de statistique de Paris. 1991, Vol 132, Num 2, pp 17-29, issn 0037-914XArticle
Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes : Fundamentals and Applications of CVD DiamondTRAN THI, T. N; FERNANDEZ, B; EON, D et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 9, pp 2057-2061, issn 1862-6300, 5 p.Article
New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurementsGUDOVSKIKH, A. S; CHOUFFOT, R; KLEIDER, J. P et al.Thin solid films. 2008, Vol 516, Num 20, pp 6786-6790, issn 0040-6090, 5 p.Conference Paper
High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-k material and SiC(H) etch stop layer : surface analyses and investigation of etch mechanismsEON, D; RABALLAND, V; CARTRY, G et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 13, pp 3951-3959, issn 0022-3727, 9 p.Article
High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctionsKLEIDER, J. P; SORO, Y. M; CHOUFFOT, R et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2641-2645, issn 0022-3093, 5 p.Conference Paper
Etching of low-k materials in high density fluorocarbon plasmaEON, D; RABALLAND, V; CARTRY, G et al.EPJ. Applied physics (Print). 2004, Vol 28, Num 3, pp 331-337, issn 1286-0042, 7 p.Conference Paper
Surface modification of Si-containing polymers during etching for bilayer lithographyEON, D; DE POUCQUES, L; PEIGNON, M. C et al.Microelectronic engineering. 2002, Vol 61-62, pp 901-906, issn 0167-9317Conference Paper
La satisfaction des patients hospitalisés à l'assistance publique hôpitaux de ParisPERRET, F; HOCQUAUX, C; FREYSSELINARD, C et al.Journal de la Société de statistique de Paris. 1991, Vol 132, Num 2, pp 18-29, issn 0037-914XArticle