au.\*:("FAFARD, S")
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Energy levels in quantum wells with capping barrier layer of finite size : bound states and oscillatory behavior of the continum statesFAFARD, S.Physical review. B, Condensed matter. 1992, Vol 46, Num 8, pp 4659-4666, issn 0163-1829Article
Quantum-engineering of III-V semiconductor structuresGOSSARD, A. C; FAFARD, S.Solid state communications. 1994, Vol 92, Num 1-2, pp 63-70, issn 0038-1098Article
Electroluminescence in CdIn2S4 thin filmsFAFARD, S; FORTIN, E.Thin solid films. 1990, Vol 187, Num 2, pp 245-251, issn 0040-6090Article
Excitation-intensity-dependent photoluminescence quenching due to electric-field screening by photocarriers captured in single-quantum-well structuresFAFARD, S; FORTIN, E; MERZ, J. L et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 11062-11066, issn 0163-1829Article
Oscillatory behavior of the continuum states in InxGa1-xAs/GaAs quantum wells due to capping-barrier layers of finite sizeFAFARD, S; FORTIN, E; ROTH, A. P et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 23, pp 13769-13772, issn 0163-1829Article
Sequential optical study of the component layers of a semiconductor quantum-well systemFAFARD, S; FORTIN, E; ROTH, A. P et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 346-352, issn 0008-4204, 7 p.Conference Paper
Detachment cross sections for sulphur negative ion rare gas collisionsHIRD, B; BRUYERE, M; FAFARD, S et al.Canadian journal of physics (Print). 1987, Vol 65, Num 7, pp 735-738, issn 0008-4204Article
Miniband formation in asymmetric double-quantum-well superlattice structuresFAFARD, S; ZHANG, Y. H; MERZ, J. L et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 16, pp 12308-12311, issn 0163-1829Article
Effects of an electric field on the continuum energy levels in InxGa1-xAs/GaAs quantum wells terminated with thin cap layersFAFARD, S; FORTIN, E; ROTH, A. P et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 16, pp 10588-10595, issn 0163-1829Article
Exciton transport in Cu2O : evidence for excitonic superfluidity ?FORTIN, E; FAFARD, S; MYSYROWICZ, A et al.Physical review letters. 1993, Vol 70, Num 25, pp 3951-3954, issn 0031-9007Article
High-Efficiency Commercial Grade 1 cm2 AlGaInP/GaAs/Ge Solar Cells with Embedded InAs Quantum Dots for Concentrator Demonstration SystemWHEELDON, J. F; VALDIVIA, C. E; ARES, R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7750, issn 0277-786X, isbn 978-0-8194-8241-9, 77502Q.1-77502Q.9Conference Paper
Fine structure in the excitonic emission of InAs/GaAs quantum dot moleculesORTNER, G; YUGOVA, I; LYANDA-GELLER, Y. B et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 12, pp 125335.1-125335.30, issn 1098-0121Article
Temperature effects in semiconductor quantum dot lasersFAFARD, S; HINZER, K; SPRINGTHORPE, A. J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 114-117, issn 0921-5107Conference Paper
Exciton droplets in zero dimensional systems in a magnetic fieldRAYMOND, S; HAWRYLAK, P; MERZ, J. L et al.Solid state communications. 1997, Vol 101, Num 12, pp 883-887, issn 0038-1098Article
Luminescence spectroscopy of InAs self-assembled quantum dotsWANG, P. D; MERZ, J. L; MEDEIROS-RIBEIRO, G et al.Superlattices and microstructures. 1997, Vol 21, Num 2, pp 259-265, issn 0749-6036Article
Red-emitting semiconductor quantum dot lasersFAFARD, S; HINZER, K; RAYMOND, S et al.Science (Washington, D.C.). 1996, Vol 274, Num 5291, pp 1350-1353, issn 0036-8075Article
Energy relaxation of electrons in InAs/GaAs quantum dot moleculesORTNER, G; OULTON, R; KURTZE, H et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 16, pp 165353.1-165353.6, issn 1098-0121Article
External cavity quantum dot tunable laser through 1.55 μmALLEN, C. Ni; POOLE, P. J; BARRIOS, P et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 26, Num 1-4, pp 372-376, issn 1386-9477, 5 p.Conference Paper
Surface photovoltage studies of multilayered structuresDE SOUZA, C. F; RUDA, H. E; FAFARD, S et al.Journal of electroanalytical chemistry (1992). 2003, Vol 559, pp 49-53, issn 1572-6657, 5 p.Conference Paper
Quantum dot infrared photodetectorLIU, H. C; FAFARD, S; DUDEK, R et al.SPIE proceedings series. 2002, pp 94-99, isbn 0-8194-4385-9, 6 p.Conference Paper
Size and shape engineering of vertically stacked self-assembled quantum dotsWASILEWSKI, Z. R; FAFARD, S; MCCAFFREY, J. P et al.Journal of crystal growth. 1999, Vol 201202, pp 1131-1135, issn 0022-0248Conference Paper
Visible quantum dots under reversed biasYANG, F; AERS, G. C; HINZER, K et al.SPIE proceedings series. 1998, pp 260-264, isbn 0-8194-2950-3Conference Paper
Optical spectroscopy of electronic states in a single pair of vertically coupled self-assembled quantum dotsHINZER, K; BAYER, M; MCCAFFREY, J. P et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 2, pp 385-392, issn 0370-1972Conference Paper
Temporal cross-section for carrier capture by self-assembled quantum dotsRAYMOND, S; FAFARD, S; HINZER, K et al.Microelectronic engineering. 2000, Vol 53, Num 1-4, pp 241-244, issn 0167-9317Conference Paper
Towards quantum dot laser diodes emitting at 1.5 micronsFAFARD, S; MCCAFFREY, J; FENG, Y et al.SPIE proceedings series. 1998, pp 271-276, isbn 0-8194-2950-3Conference Paper
