Steps on subliming Si(111) surfacesHOMMA, Y; FINNIE, P.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 49, pp 9879-9888, issn 0953-8984Conference Paper

Band-gap shift transition in the photoluminescence of single-walled carbon nanotubesFINNIE, P; HOMMA, Y; LEFEBVRE, J et al.Physical review letters. 2005, Vol 94, Num 24, pp 247401.1-247401.4, issn 0031-9007Article

Critical role of gas phase diffusion and high efficiency in vertically aligned carbon nanotube forest growthVINTEN, P; MARSHALL, P; QUANCE, T et al.Carbon (New York, NY). 2013, Vol 61, pp 22-32, issn 0008-6223, 11 p.Article

Growth of quantum wire structures by selective area chemical beam epitaxyFINNIE, P; BUCHANAN, M; LACELLE, C et al.Journal of crystal growth. 1996, Vol 160, Num 3-4, pp 220-228, issn 0022-0248Article

Growth by selective area epitaxy on patterned substrates and characterization of GaInAs/InP nanostructuresROTH, A. P; FINNIE, P; CHARBONNEAU, S et al.Microelectronics journal. 1997, Vol 28, Num 8-10, pp 909-913, issn 0959-8324Conference Paper

Origin of periodic rippling during chemical vapor deposition growth of carbon nanotube forestsVINTEN, P; BOND, J; MARSHALL, P et al.Carbon (New York, NY). 2011, Vol 49, Num 15, pp 4972-4981, issn 0008-6223, 10 p.Article

Optimization of methane cold wall chemical vapor deposition for the production of single walled carbon nanotubes and devicesFINNIE, P; LI-POOK-THAN, A; LEFEBVRE, J et al.Carbon (New York, NY). 2006, Vol 44, Num 15, pp 3199-3206, issn 0008-6223, 8 p.Article

Temperature-dependent photoluminescence from single-walled carbon nanotubesLEFEBVRE, J; FINNIE, P; HOMMA, Y et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 4, pp 045419.1-045419.8, issn 1098-0121Article

Photoluminescence from single-walled carbon nanotubes: a comparison between suspended and micelle-encapsulated nanotubesLEFEBVRE, J; FRASER, J. M; HOMMA, Y et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 8, pp 1107-1110, issn 0947-8396, 4 p.Article

InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effectsRIEL, B. J; HINZER, K; MOISA, S et al.Journal of crystal growth. 2002, Vol 236, Num 1-3, pp 145-154, issn 0022-0248Article

Maskless selective area molecular beam epitaxy of semiconductors and metals using atomic step networks on siliconFINNIE, P; HOMMA, Y.Journal of crystal growth. 1999, Vol 201202, pp 604-609, issn 0022-0248Conference Paper

Single walled carbon nanotubes: a model system for excitons in one dimensionLEFEBVRE, J; FINNIE, P.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7922, issn 0277-786X, isbn 978-0-8194-8459-8, 792206.1-792206.6Conference Paper

Step dynamics on growing silicon surfaces observed by ultrahigh vacuum scanning electron microscopyHOMMA, Y; FINNIE, P.Journal of crystal growth. 2002, Vol 237-39, pp 28-34, issn 0022-0248, 1Conference Paper

Morphological instability of atomic steps observed on Si(111) surfacesHOMMA, Y; FINNIE, P; UWAHA, M et al.Surface science. 2001, Vol 492, Num 1-2, pp 125-136, issn 0039-6028Article