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Deep and shallow levels in n-type indium phosphide irradiated with 200-keV deuteronsMACRANDER, A. T; SCHWARTZ, B; FOCHT, M. W et al.Journal of applied physics. 1984, Vol 55, Num 10, pp 3595-3602, issn 0021-8979Article

Effect of macroscopic stress on accelerated aging of GalnAsP channeled substrate buried heterostruture lasersSWAMINATHAN, V; KOSZI, L. A; FOCHT, M. W et al.Journal of applied physics. 1989, Vol 66, Num 4, pp 1849-1854, issn 0021-8979Article

Bistability in coupled cavity semiconductor lasersDUTTA, N. K; AGRAWAL, G. P; FOCHT, M. W et al.Applied physics letters. 1984, Vol 44, Num 1, pp 30-32, issn 0003-6951Article

Batch fabrication and operation of GaAs-Al_xGa_1-xAs field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays : Smart pixelsD'ASARO, L. A; CHIROVSKY, L. M. F; SMITH, L. E et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 2, pp 670-677, issn 0018-9197Article

Extended temperature and wavelength performance of vertical cavity top surface emitting lasersCATCHMARK, J. M; MORGAN, R. A; CHRISTODOULIDES, D. N et al.Applied physics letters. 1993, Vol 63, Num 23, pp 3122-3124, issn 0003-6951Article

Fabry-Perot-enhanced self-electro-optic-effect devicesMORGAN, R. A; LIVESCU, G; CHIROVSKY, L. M. F et al.Optics letters. 1992, Vol 17, Num 6, pp 423-425, issn 0146-9592Article

Logic self-electrooptic effect devices : quantum-well optoelectronic multiport logic gates, multiplexers, demultiplexers, and shift registersLENTINE, A. L; TOOLEY, F. A. P; PRZYBYLEK, G. J et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 6, pp 1539-1553, issn 0018-9197Article

Multiwavelength DFB laser array with integrated spot size convertersKETELSEN, L. J. P; GRENKO, J. A; STAMPONE, D. V et al.IEEE journal of quantum electronics. 2000, Vol 36, Num 6, pp 641-648, issn 0018-9197Article

Technology development of a high-density 32-channel 16-Gb/s optical data link for optical interconnection applications for the Optoelectronic Technology Consortium (OETC)YIU-MAN WONG; MUEHLNER, D. J; GUTH, G. D et al.Journal of lightwave technology. 1995, Vol 13, Num 6, pp 995-1016, issn 0733-8724Article

High-power coherently coupled 8×8 vertical cavity surface emitting laser arrayMORGAN, R. A; KOJIMA, K; MULLALLY, T et al.Applied physics letters. 1992, Vol 61, Num 10, pp 1160-1162, issn 0003-6951Article

Ring oscillators with monolithically integrated-optical readout based on GaAs-AlGaAs FET-SEED technologyWOODWARD, T. K; NOVOTNY, R. A; LENTINE, A. L et al.IEEE electron device letters. 1995, Vol 16, Num 2, pp 52-54, issn 0741-3106Article

Two-dimensional matrix addressed vertical cavity top-surface emitting laser array displayMORGAN, R. A; GUTH, G. D; ZIMMER, C et al.IEEE photonics technology letters. 1994, Vol 6, Num 8, pp 913-917, issn 1041-1135Article

Optical injection induced polarization bistability in vertical-cavity surface-emitting lasersPAN, Z. G; SHIJUN JIANG; DAGENAIS, M et al.Applied physics letters. 1993, Vol 63, Num 22, pp 2999-3001, issn 0003-6951Article

Field effect transistor-self electrooptic effect device (FET-SEED) differential transimpedance amplifiers for two-dimensional optical data linksNOVOTNY, R. A; WOJCIK, M. J; FREUND, J. M et al.Journal of lightwave technology. 1995, Vol 13, Num 4, pp 606-614, issn 0733-8724Article

Ambipolar lifetimes in GaAs/AlGaAs self-electro-optic-effect devicesSWAMINATHAN, V; FREUND, J. M; FOCHT, M. W et al.Applied physics letters. 1992, Vol 61, Num 6, pp 687-689, issn 0003-6951Article

Role of electro refraction in quantum-well Fabry-Perot modulatorsLIVESCU, G; BOYD, G. D; MORGAN, R. A et al.Applied physics letters. 1992, Vol 60, Num 12, pp 1418-1420, issn 0003-6951Article

Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasersZILKO, J. L; KETELSEN, L. J. P; NITZSCHE, P. M et al.IEEE journal of quantum electronics. 1989, Vol 25, Num 10, pp 2091-2095, issn 0018-9197, 5 p.Article

Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowthWILT, D. P; LONG, J; DAUTREMONT-SMITH, W. C et al.Electronics Letters. 1986, Vol 22, Num 16, pp 869-870, issn 0013-5194Article

Transverse mode control of vertical-cavity top-surface-emitting lasersMORGAN, R. A; GUTH, G. D; FOCHT, M. W et al.IEEE photonics technology letters. 1993, Vol 5, Num 4, pp 374-377, issn 1041-1135Article

Diode-clamped symmetric self-elctro-optic effect devices with subpicojoule switching energiesLENTINE, A. L; CHIROVSKY, L. M. F; FOCHT, M. W et al.Applied physics letters. 1992, Vol 60, Num 15, pp 1809-1811, issn 0003-6951Article

Uniform 64 × 1 arrays of individually-addressed vertical cavity top surface emitting lasersMORGAN, R. A; ROBINSON, K. C; CHIROVSKY, L. M. F et al.Electronics Letters. 1991, Vol 27, Num 16, pp 1400-1402, issn 0013-5194Article

High-power quantum-well modulators exploiting resonant tunnelingMORGAN, R. A; CHIROVSKY, L. M. F; FOCHT, M. W et al.Applied physics letters. 1991, Vol 59, Num 27, pp 3524-3526, issn 0003-6951Article

4×4 arrays of FET-SEED embedded control 2×1 optoelectronic switching nodes with electrical fan-outLENTINE, A. L; NOVOTNY, R. A; LEIBENGUTH, R. E et al.IEEE photonics technology letters. 1994, Vol 6, Num 9, pp 1126-1129, issn 1041-1135Article

1 W (pulsed) vertical cavity surface emitting laserMORGAN, R. A; KOJIMA, K; ASOM, M. T et al.Electronics Letters. 1993, Vol 29, Num 2, pp 206-207, issn 0013-5194Article