Patriarchy : towards a reconceptualisationFOORD, J; GREGSON, N.Antipode (Oxford. Print). 1986, Vol 18, Num 2, pp 186-211, issn 0066-4812Article

Environment, planning and feminist theory: a British perspectiveBOWLBY, S. R; FOORD, J; McDOWELL, L et al.Environment and planning A London. 1982, Vol 14, Num 6, pp 711-716Article

Patriarchy : comments on criticsGREGSON, N; FOORD, J.Antipode (Oxford. Print). 1987, Vol 19, Num 3, pp 371-375, issn 0066-4812Article

The place of gender in locality studiesBOWLBY, S. R; FOORD, J; McDOWELL, L et al.Area (London, 1969). 1986, Vol 18, Num 4, pp 327-331, issn 0004-0894Article

Thermal decomposition of triethylgallium on GaAs(100) in the presence of Al and InFITZGERALD, E. T; FOORD, J. S.Surface science. 1992, Vol 278, Num 1-2, pp 121-130, issn 0039-6028Article

Surface chemistry of sodium, chlorine, and oxygen on chromium and chromium(III) oxideFOORD, J. S; LAMBERT, R. M.Langmuir. 1986, Vol 2, Num 5, pp 677-682, issn 0743-7463Article

Nanodiamond pretreatment for the modification of diamond electrodes by platinum nanoparticlesHU, J; LU, X; FOORD, J. S et al.Electrochemistry communications. 2010, Vol 12, Num 5, pp 676-679, issn 1388-2481, 4 p.Article

Sulphur adsorption and sulphide growth on Rh(111) = Adsorption de soufre et croissance de sulfure sur du rhodium (111)FOORD, J. S; REYNOLDS, A. E.Surface science. 1985, Vol 164, Num 2-3, pp 640-648, issn 0039-6028Article

Electron beam stimulated chemical vapor deposition of patterned tungsten films on Si(100) = Dépôt chimique en phase vapeur stimulé par faisceau d'électrons de couches de tungstène à motifs sur Si(100)JACKMAN, R. B; FOORD, J. S.Applied physics letters. 1986, Vol 49, Num 4, pp 196-198, issn 0003-6951Article

Chemical vapour deposition on silicon: in situ surface studies = Dépôt chimique en phase vapeur sur le silicium: études de surface in situFOORD, J. S; JACKMAN, R. B.Chemical physics letters. 1984, Vol 112, Num 2, pp 190-194, issn 0009-2614Article

Surface-science investigations of the metallization of semiconductors by photochemical deposition and related techniquesFOORD, J. S; JACKMAN, R. B.Journal of the Optical Society of America. B, Optical physics (Print). 1986, Vol 3, Num 5, pp 806-811, issn 0740-3224Article

The adsorption and thermal decomposition of hydrogen sulphide on GaAs(100)FOORD, J. S; FITZGERALD, E. T.Surface science. 1994, Vol 306, Num 1-2, pp 29-36, issn 0039-6028Article

The interaction of WF₆ with Si(100). Thermal and photon induced reactionsJACKMAN, R. B; FOORD, J. S.Surface science. 1988, Vol 201, Num 1-2, pp 47-58, issn 0039-6028Article

Structural and reactive properties at the metal-halogen interface: the interaction of bromine with chromium (110) = Propriétés structurales et réactives à l'interface métal-halogène: l'interface du brome avec le chrome (110)FOORD, J. S; LAMBERT, R. M.Surface science. 1984, Vol 138, Num 1, pp 258-268, issn 0039-6028Article

Interaction of oxygen with chromium(III) oxide: chemisorption studies and the effects of surface additivesFOORD, J. S; LAMBERT, R. M.Surface science. 1986, Vol 169, Num 2-3, pp 327-336, issn 0039-6028Article

Reaction mechanisms for the photon-enhanced etching of semiconductors: an investigation of the UV-stimulated interaction of chlorine with Si(100)JACKMAN, R. B; EBERT, H; FOORD, J. S et al.Surface science. 1986, Vol 176, Num 1-2, pp 183-192, issn 0039-6028Article

Reaction kinetics for the CBE growth of GaAs from triethylgallium ; computer modelling studies incorporating recent surface spectroscopic dataFRENCH, C. L; FOORD, J. S.Journal of crystal growth. 1992, Vol 120, Num 1-4, pp 63-70, issn 0022-0248Conference Paper

Surface chemical studies of the influence of In and Al on the decomposition of TEG on GaAs(100)FITZGERALD, E. T; FRENCH, C. L; FOORD, J. S et al.Journal of crystal growth. 1992, Vol 120, Num 1-4, pp 57-62, issn 0022-0248Conference Paper

In situ x-ray photoemission studies of the oxidation of Y-Ba-Cu filmsPRICE, R. J; JACKMAN, R. B; FOORD, J. S et al.Journal of applied physics. 1988, Vol 64, Num 12, pp 6799-6802, issn 0021-8979, 4 p.Article

An X-ray photoelectron spectroscopic investigation of the oxidation of manganese = Etude par spectrométrie de photoélectron RX de l'oxydation du manganèseFOORD, J. S; JACKMAN, R. B; ALLEN, G. C et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1984, Vol 49, Num 5, pp 657-663, issn 0141-8610Article

The initial stages of diamond growth : an adsorption study of hof filament activated methane and hydrogen on Si(100)JACKMAN, R. B; LYE HING CHUA; FOORD, J. S et al.Surface science. 1993, Vol 292, Num 1-2, pp 47-60, issn 0039-6028Article

Geometric effects in the control of catalytic selectivity by surface additives: Monte Carlo simulation studiesREYNOLDS, A. E; TILDESLEY, D. J; FOORD, J. S et al.Surface science. 1987, Vol 191, Num 1-2, pp 239-248, issn 0039-6028Article

In situ x-ray photoemission studies of the oxidation of Y-Ba-Cu filmsPRICE, R. J; JACKMAN, R. B; FOORD, J. S et al.Journal of applied physics. 1988, Vol 64, Num 12, pp 6799-6802, issn 0021-8979, 4 p.Article

Etching reactions of C₂H₅I on GaAs(100)SINGH, N. K; BOLZAN, A; FOORD, J. S et al.Surface science. 1998, Vol 409, Num 2, pp 272-282, issn 0039-6028Article

Surface studies of the reactivity of methyl, acetylene and atomic hydrogen at CVD diamond surfacesFOORD, J. S; LOH, K. P; JACKMAN, R. B et al.Surface science. 1998, Vol 399, Num 1, pp 1-14, issn 0039-6028Article