Low energy electron diffraction, Auger and energy loss spectroscopic study of the initial stages of growth by molecular beam epitaxy of GaAs on Si(211) substratesFOTIADIS, L; KAPLAN, R.Thin solid films. 1990, Vol 184, pp 415-422, issn 0040-6090, 8 p.Conference Paper

Initial stages of growth of GaAs on silicon (211) substrates by migration-enhanced molecular beam epitaxyFOTIADIS, L; KAPLAN, R.Applied physics letters. 1989, Vol 55, Num 24, pp 2538-2540, issn 0003-6951, 3 p.Article

Magnetization near a Lifshitz point in the high-T_c superconductorsMARKIEWICZ, R. S; FOTIADIS, L.Physical review. B, Condensed matter. 1988, Vol 37, Num 4, pp 2289-2292, issn 0163-1829Article

Raman study of low growth temperature GaAsGANT, T. A; SHEN, H; FLEMISH, J. R et al.Applied physics letters. 1992, Vol 60, Num 12, pp 1453-1455, issn 0003-6951Article

A novel technique for the study of defects using quantum wiresSMITH, D. D; WYBOURNE, M; WU, J. C et al.Solid state communications. 1994, Vol 91, Num 4, pp 313-317, issn 0038-1098Article

Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layersSUN, H.-J; WATKINS, G. D; RONG, F. C et al.Applied physics letters. 1992, Vol 60, Num 6, pp 718-720, issn 0003-6951Article

Lattice position of Si in GaAs determined by x-ray standing wave measurementsSHIH, A; COWAN, P. L; SOUTHWORTH, S et al.Journal of applied physics. 1993, Vol 73, Num 12, pp 8161-8168, issn 0021-8979Article

Photovoltage amplification and quasi-photovoltaic operation of an infrared hot-electron transistorCHOI, K. K; TAYSING-LARA, M; FOTIADIS, L et al.Applied physics letters. 1991, Vol 59, Num 13, pp 1614-1616, issn 0003-6951Article

Infrared absorption and photoconductive gain of quantum well infrared photodetectorsCHOI, K. K; FOTIADIS, L; TAYSING-LARA, M et al.Applied physics letters. 1992, Vol 60, Num 5, pp 592-594, issn 0003-6951Article

Dynamics of photoreflectance from undoped GaAsSHEN, H; DUTTA, M; LUX, R et al.Applied physics letters. 1991, Vol 59, Num 3, pp 321-323, issn 0003-6951Article

High detectivity InGaAs base infrared hot-electron transistorCHOI, K. K; FOTIADIS, L; TAYSING-LARA, M et al.Applied physics letters. 1991, Vol 59, Num 25, pp 3303-3305, issn 0003-6951Article

Thermally stimulated hot-electron spectroscopyCHOI, K. K; FOTIADIS, L; NEWMAN, P. G et al.Applied physics letters. 1990, Vol 57, Num 1, pp 76-78, issn 0003-6951Article

Photoreflectance study of surface Fermi level in GaAs and GaAlAsSHEN, H; DUTTA, M; FOTIADIS, L et al.Applied physics letters. 1990, Vol 57, Num 20, pp 2118-2120, issn 0003-6951, 3 p.Article