au.\*:("FRETWURST, E")
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UNTERSUCHUNGEN AN SILIZIUM-HALBLEITERDETEKTOREN ZUR ZEITLICHEN STRUKTUR DER STROMIMPULSE = RECHERCHES SUR LA STRUCTURE TEMPORELLE DES IMPULSIONS DE COURANT PROVENANT DE DETECTEURS AU SILICIUMFRETWURST E; HAKEN N; LINDSTROM G et al.1972; BMBW-FBK-72-11; DTSCH.; DA. 1972; PP. (37 P.); ABS. ANGL.; BIBL. 28 REF.Report
Long term reverse annealing in silicon detectorsSCHULZ, T; FEICK, H; FRETWURST, E et al.IEEE transactions on nuclear science. 1994, Vol 41, Num 4, pp 791-795, issn 0018-9499, 1Conference Paper
Second-order generation of point defects in highly irradiated float zone silicon: annealing studiesPINTILIE, I; FRETWURST, E; KRAMBERGER, G et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 578-582, issn 0921-4526, 5 p.Conference Paper
Shallow energy levels induced by γ rays in standard and oxygenated floating zone siliconMENICHELLI, D; SCARINGELLA, M; MIGLIO, S et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 84, Num 4, pp 449-453, issn 0947-8396, 5 p.Article
Radiation hardness of silicon: a challenge for defect engineeringSTAHL, J; FRETWURST, E; LINDSTROEM, G et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 705-709, issn 0921-4526, 5 p.Conference Paper