INFLUENCE OF IMPURITIES AND CRYSTALLINE DEFECTS ON ELECTRON MOBILITY IN HEAVILY DOPED SILICONFINETTI M; GALLONI R; MAZZONE AM et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1381-1385; BIBL. 14 REF.Article

Metal grid optimization and emitter tailoring in crystalline silicon solar cellsBIANCONI, M; GALLONI( R.); MAZZONE, A. M et al.Alta frequenza. 1986, Vol 55, Num 4, pp 271-275, issn 0002-6557Article

MULTISCANNING ELECTRON BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICONBENTINI GG; GALLONI R; NIPOTI R et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 661-663; BIBL. 12 REF.Article

STUDY OF ELECTRICAL ACTIVITY RECOVERY STAGES IN PHOSPHORUS IMPLANTED SILICON.GALLONI R; PEDULLI L; ZIGNANI F et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 32; NO 3-4; PP. 223-227; BIBL. 14 REF.Article

A TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION IMPLANTED SILICON.CEMBALI F; GALLONI R; ZIGNANI F et al.1974; J. PHYS. E; G.B.; DA. 1974; VOL. 7; NO 9; PP. 698-700; BIBL. 4 REF.Article

ELECTRICAL ACTIVATION PROCESSES OF P⁺ IONS CHANNELED ALONG THE (110) AXIS ON SILICON: EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE.CEMBALI F; GALLONI R; ZIGNANI F et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 26; NO 3; PP. 161-171; BIBL. 11 REF.Article

Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic strippingGALLONI, R; SARDO, A.Review of scientific instruments. 1983, Vol 54, Num 3, pp 369-373, issn 0034-6748Article

RADIATION DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION: RANDOM AND ALIGNED IMPLANTS.CEMBALL F; DORI L; GALLONI R et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 111-117; BIBL. 16 REF.Article

Investigation of the potentially offered by ion implantation and electron bean annealing to obtain high efficiency solar cellsGALLONI, R; MERLI, P. G.Solar energy R & D in the European community. Series C. Photovoltaic power generation. 1983, Vol 3, pp 44-51Article

EXPERIMENTAL AND COMPUTER ANALYSIS OF P⁺-ION PENETRATION TAILS IN A SIO₂-SI TWO-LAYER SYSTEMDESALVO A; GALLONI R; ROSA R et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 1994-1997; BIBL. 16 REF.Article

DOPING IN RADIATION DAMAGE PROFILES OF P⁺ IONS IMPLANTED IN SILICON ALONG THE (110) AXIS.CEMBALI F; GALLONI R; MOUSTY F et al.1974; RAD. EFFECTS.; G.B.; DA. 1974; VOL. 21; NO 4; PP. 255-264; BIBL. 28 REF.Article

AN AUTOMATED SYSTEM FOR THE CONTROLLED STRIPPING OF THIN SILICON LAYERS.GALLONI R; GAVINA G; LOTTI R et al.1978; REV. PHYS. APPL.; FR.; DA. 1978; VOL. 13; NO 2; PP. 81-84; ABS. FR.; BIBL. 6 REF.Article

UNANALYZED ION IMPLANTATION PROCEDURE WITH INCOHERENT LIGHT SCANNING ANNEALING FOR SILICON SOLAR CELLS MANUFACTURINGBENTINI G; CORRERA L; GALLONI R et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 759-763; BIBL. 11 REF.Conference Paper

SILICON SOLAR CELLS BY ION IMPLANTATION: E-BEAM AND SELF ANNEALINGCEMBALI GF; GALLONI R; LULLI G et al.1982; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 4/1982/STRESA; NLD/USA/GBR; DORDRECHT; BOSTON; LONDON: D. REIDEL PUBLISHING COMPANY; DA. 1982; PP. 1013-1017; BIBL. 6 REF.Conference Paper

ANNEALING OF PHOSPHORUS IMPLANTED SILICON WAFERS BY MULTISCANNING ELECTRON BEAM: SOLAR CELLS APPLICATIONBENTINI GG; GALLONI R; GABILLI E et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6735-6742; BIBL. 27 REF.Article

EFFECT OF LASER IRRADIATION ON THE CHARACTERISTICS OF IMPLANTED LAYERS FOR SILICON SOLAR CELLSZIGNANI F; GALLONI R; PEDULLI L et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 213-221; BIBL. 9 REF.;_EUR-6376Conference Paper

Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous siliconFONSECA, F. J; GALLONI, R; LARSEN, A. N et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1993, Vol 67, Num 1, pp 107-115, issn 0958-6644Article

Effect of annealing and oxide layer thickness on doping profile shape of «through-oxide» implanted P⁺ ions in textured siliconEL-DESSOUKI, M. S; GALLONI, R.Renewable energy. 1991, Vol 1, Num 1, pp 67-75, issn 0960-1481Article

Amorphous silicon solar cellsGALLONI, R.Renewable energy. 1996, Vol 8, Num 1-4, pp 400-404, issn 0960-1481Conference Paper

Comparison and optimization of different N⁺ dopant profiles for silicon solar cellsCUEVAS, A; BALBUENA, M. A; GALLONI, R et al.Photovoltaic specialists conference. 19. 1987, pp 918-924Conference Paper

Doping of amorphous silicon by potassium ion implantationDESALVO, A; ZIGNANI, F; GALLONI, R et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1993, Vol 67, Num 1, pp 131-142, issn 0958-6644Article

Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon filmsGALLONI, R; TSUO, Y. S; BAKER, D. W et al.Applied physics letters. 1990, Vol 56, Num 3, pp 241-243, issn 0003-6951Article

Tailored emitter ion-implanted silicon solar cellsGALLONI, R; FAVERO, L; MAZZONE, A. M et al.Solar cells. 1984, Vol 11, Num 1, pp 69-85, issn 0379-6787Article

The nature of electrically inactive antimony in siliconLARSEN, A. N; PEDERSEN, F. T; WEYER, G et al.Journal of applied physics. 1986, Vol 59, Num 6, pp 1908-1917, issn 0021-8979Article

Spectral behavior of solar cells based on the junction near local defect layer designSUMMONTE, C; BIAVATI, M; GABILLI, E et al.Applied physics letters. 1993, Vol 63, Num 6, pp 785-787, issn 0003-6951Article