Secondary neutral mass spectrometry studies of germanium-silane coupling agent-polymer interphasesGELLMAN, A. J; NAASZ, B. M; SCHMIDT, R. G et al.Journal of adhesion science and technology. 1990, Vol 4, Num 7, pp 597-601, issn 0169-4243, 5 p.Article

Electronic promotion of silicon nitridation by alkali metalsSOUKIASSIAN, P; BAKSHI, M. H; STARNBERG, H. I et al.Physical review letters. 1987, Vol 59, Num 13, pp 1488-1491, issn 0031-9007Article

Adsorption of Cu and Ag atoms on Si(111) surfaces: local density functional determination of geometries and electronic structuresSHIH-HUNG CHOU; FREEMAN, A. J; GRIGORAS, S et al.The Journal of chemical physics. 1988, Vol 89, Num 8, pp 5177-5189, issn 0021-9606Article

Conversion of acetylene to benzene over palladium single-crystal surfaces. I: The low-pressure stoichiometric and the high-pressure catalytic reactionsRUCKER, T. G; LOGAN, M. A; GENTLE, T. M et al.Journal of physical chemistry (1952). 1986, Vol 90, Num 12, pp 2703-2708, issn 0022-3654Article

Bonding of noble metals to semiconductor surfaces: first-principles calculations of Cu and Ag on Si(111)SHIH-HUNG CHOU; FREEMAN, A. J; GRIGORAS, S et al.Journal of the American Chemical Society. 1987, Vol 109, Num 6, pp 1880-1881, issn 0002-7863Article

Si₃N₄-Si interface formation by catalytic nitridation using nitrogen exposures on alkali metal overlayers and removal of the catalyst: N₂/Na/Si(100) 2×1SOUKIASSIAN, P; GENTLE, T. M; SCHUETTE, K. P et al.Applied physics letters. 1987, Vol 51, Num 5, pp 346-348, issn 0003-6951Article

SiO₂-Si interface formation by catalytic oxidation using alcali metals and removal of the catalyst speciesSOUKIASSIAN, P; GENTLE, T. M; BAKSHI, M. H et al.Journal of applied physics. 1986, Vol 60, Num 12, pp 4339-4341, issn 0021-8979Article

Organofunctional silanes as adhesion promoters : direct characterization of the polymer/silane interphaseGENTLE, T. E; SCHMIDT, R. G; NAASZ, B. M et al.Journal of adhesion science and technology. 1992, Vol 6, Num 2, pp 307-316, issn 0169-4243Article

Catalytic oxidation of semiconductors by alkali metalsSOUKIASSIAN, P; GENTLE, T. M; BAKSHI, M. H et al.Physica scripta (Print). 1987, Vol 35, Num 5, pp 757-760, issn 0031-8949Article

Electronic properties of O₂ on Cs or Na overlayers adsorbed on Si(100)2×1 from room temperature to 650°CSOUKIASSIAN, P; BAKSHI, M. H; HURYCH, Z et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 8, pp 4176-4179, issn 0163-1829Article

Surface synthesis of thiopheneGENTLE, T. M; TSAI, C. T; WALLEY, K. P et al.Catalysis letters. 1989, Vol 2, Num 1, pp 19-26, issn 1011-372XArticle

CH₃Cl adsorption on a Si(100)2×1 surface modified by alkali metal overlayer studied by soft X-ray photoemission using synchrotron radiationGENTLE, T. M; SOUKIASSIAN, P; SCHUETTE, K. P et al.Surface science. 1988, Vol 202, Num 3, pp L568-L576, issn 0039-6028Article

X-ray photoelectron spectroscopy investigation of direct process contact masses. ReplyGENTLE, T. M; OWEN, M. J; GUPTA, S. K et al.Journal of catalysis (Print). 1987, Vol 103, Num 1, pp 232-237, issn 0021-9517Article

Catalytic chemistry of palladium surfaces under ultrahigh vacuum conditionsGENTLE, T. M; GRASSIAN, V. H; KLARUP, D. G et al.Journal of the American Chemical Society. 1983, Vol 105, Num 22, pp 6766-6767, issn 0002-7863Article