NORMAL AND WAVELENGTH-MODULATED ABSORPTION OF THALLIUM BROMIDE SOLUTIONSGIORGIANNI U; GRASSO V; SAITTA G et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 5; PP. 591-594; BIBL. 27 REF.Article

THERMOREFLECTIVITY OF BISMUTH TELLURIDEGIORGIANNI U; GRASSO V; SAITTA G et al.1972; LETTERE NUOVO CIMENTO; ITAL.; DA. 1972; VOL. 5; NO 14; PP. 951-953; BIBL. DISSEM.Serial Issue

ANOMALOUS DISPERSION DUE TO TL PRESENCE IN ALKALI HALIDES.GIORGIANNI U; MONDIO G; SAITTA G et al.1976; PHYSICA B+C; PAYS-BAS; DA. 1976; VOL. 81; NO 2; PP. 311-314; BIBL. 18 REF.Article

THERMOMODULATED A-BAND ABSORPTION OF KBR:TL.GIORGIANNI U; PERILLO P; SAITTA G et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 7; PP. 895-898; BIBL. 14 REF.Article

ANALYSE DE L'INTERACTION ELECTRON-RESEAU DANS KBR DOPE AU THALLIUM.GIORGIANNI U; MONDIO G; PERILLO P et al.1975; PHYSICA B+C; PAYS-BAS; DA. 1975; VOL. 79; NO 2; PP. 175-191; ABS. ANGL.; BIBL. 33 REF.Article

HIGH RESOLUTION SPECTROSCOPY OF THE A-BAND ABSORPTION STRUCTURE.GIORGIANNI U; MONDIO G; SAITTA G et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 3; PP. 249-252; BIBL. 23 REF.Article

INFRARED AND UV-VISIBLE SPECTRA OF LAYER SEMICONDUCTORS GAS, GASE AND GATE.GIORGIANNI U; MONDIO G; PERILLO P et al.1977; J. PHYS.; FR.; DA. 1977; VOL. 38; NO 10; PP. 1293-1299; ABS. FR.; BIBL. 33 REF.Article

OPTICAL PROPERTIES OF THE LAYERED SEMICONDUCTOR ZNIN₂S₄GIORGIANNI U; GRASSO V; MONDIO G et al.1978; PHYS. LETTERS, A; NLD; DA. 1978; VOL. 68; NO 2; PP. 247-248; BIBL. 9 REF.Article

A NEW SELF-CONSISTENT SMOOTHING PROGRAM.GIORGIANNI U; MONDIO G; SAITA G et al.1976; CALCOLO; ITAL.; DA. 1976; VOL. 13; NO 3; PP. 361-368; BIBL. 6 REF.Article

OPTICAL TRANSITIONS IN THE MODULATED REFLECTIVITY SPECTRUM OF ION-IMPLANTED GAASGIORGIANNI U; GRASSO V; MONDIO G et al.1979; CANAD. J. PHYS.; CAN; DA. 1979; VOL. 57; NO 6; PP. 917-919; ABS. FRE; BIBL. 13 REF.Article

S/N RATIO IMPROVEMENT IN THE PHASE SENSITIVE TECHNIQUE FOR LOW FREQUENCY MEASUREMENTS.GIORGIANNI U; MONDIO G; SAITTA G et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 1; PP. 77-79; ABS. FR.; BIBL. 6 REF.Article

ROLE OF THE JAHN-TELLER EFFECT IN THE EXCITED STATES OF KBR: TL-TYPE CRYSTALS.GIORGIANNI U; MONDIO G; SAITTA G et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 74; NO 1; PP. 317-322; ABS. FR.; BIBL. 21 REF.Article

OSCILLATOR STRENGTH INCREASE OF THE B-BAND IN KBR: TL UNDER THERMAL PERTURBATION.GIORGIANNI U; MONDIO G; SAITTA G et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 54; NO 1; PP. 45-46; BIBL. 10 REF.Article

THERMALLY INDUCED ABSORPTION-INTENSITY TRANSFER BETWEEN TL⁺ BANDS IN ALKALI HALIDES.GIORGIANNI U; MONDIO G; PERILLO P et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 12; PP. 5983-5990; BIBL. 40 REF.Article

COMPLEX BAND EDGE AT THE ENERGY GAP OF GATE.GIORGIANNI U; MONDIO G; SAITTA G et al.1975; LETTERE NUOVO CIMENTO; ITAL.; DA. 1975; VOL. 14; NO 14; PP. 529-531; BIBL. 12 REF.Article

ELECTRONIC EXCITATIONS IN GALLIUM SELENIDE.GIORGIANNI U; MONDIO G; SAITTA G et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 54; NO 1; PP. 51-52; BIBL. 8 REF.Article

Spectroscopic studies of complex ion centres in thallium bromide solutionsDE LUCA, L; GIORGIANNI, U; PERILLO, P et al.The Journal of physics and chemistry of solids. 1988, Vol 49, Num 4, pp 363-368, issn 0022-3697Article

Frequency-dependent conductivity in boron- and phorphorus-doped amorphous silicon filmsGRASSO, V; GIORGIANNI, U; NERI, F et al.Thin solid films. 1992, Vol 209, Num 1, pp 97-103, issn 0040-6090Article

Amorphous silicon-carbon films prepared by reactive evaporationGIORGIANNI, U; GRASSO, V; NARDI, N et al.Il Nuovo cimento. D. 1993, Vol 15, Num 6, pp 917-924, issn 0392-6737Article