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ELECTRICAL AND PHOTOVOLTAIC PROPERTIES OF CD_1-XZN_XS/P-GAAS HETEROJUNCTIONSFRANZOSI P; GHEZZI C; GOMBIA E et al.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 21; NO 1; PP. 83-90; BIBL. 38 REF.Article

CRYSTAL DEFECTS IN CD_1-XZN_XS/GAAS HETEROSTRUCTURES PREPARED BY VAPOUR PHASE CHEMICAL TRANSPORTFRANZOSI P; GHEZZI C; GOMBIA E et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 2; PP. 314-322; BIBL. 31 REF.Article

AC ADMITTANCE OF CDZNS/P-GAAS HETEROJUNCTIONSFRANZOSI P; GOMBIA E; GHEZZI C et al.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 4; PP. 225-231; BIBL. 17 REF.Article

EPITAXIAL GROWTH OF SINGLE CRYSTAL CD_1-X ZN_XS LAYERS ON (111) GAAS SUBSTRATES USING THE CLOSE-SPACED GEOMETRYFRANZOSI P; GHEZZI C; GOMBIA E et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 3; PP. 306-314; BIBL. 22 REF.Article

TRANSPORT PROPERTIES OF SEMICONDUCTING ZNIN₂S₄.GOMBIA E; ROMEO N; SBERVEGLIERI G et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 2; PP. 651-655; ABS. FR.; BIBL. 13 REF.Article

Thermal behaviour of deep levels at dislocations in n-type siliconCAVALCOLI, D; CAVALLINI, A; GOMBIA, E et al.Journal de physique. III (Print). 1997, Vol 7, Num 12, pp 2361-2366, issn 1155-4320Conference Paper

Use of spatially dependent electron capture to profile deep-level densities in Schottky barriersGOMBIA, E; GHEZZI, C; MOSCA, R et al.Journal of applied physics. 1985, Vol 58, Num 3, pp 1285-1291, issn 0021-8979Article

The CVD growth of CuAlTe₂ single crystalsGOMBIA, E; LECCABUE, F; PELOSI, C et al.Materials letters (General ed.). 1984, Vol 2, Num 5, pp 429-431, issn 0167-577XArticle

Effects of melt composition on deep electronic states and compensation ratios in n-type LEC gallium arsenideFORNARI, R; GOMBIA, E; MOSCA, R et al.Journal of electronic materials. 1989, Vol 18, Num 2, pp 151-155, issn 0361-5235, 5 p., IArticle

Energy levels associated with extended defects in plastically deformed n-type siliconCAVALCOLI, D; CAVALLINI, A; GOMBIA, E et al.Journal de physique. III (Print). 1997, Vol 7, Num 7, pp 1399-1409, issn 1155-4320Conference Paper

DX-center-related features by capacitance measurements in AlGaAsGHEZZI, C; GOMBIA, E; MOSCA, R et al.Journal of applied physics. 1991, Vol 70, Num 1, pp 215-220, issn 0021-8979, 6 p.Article

Hole diffusion length investigation by photon and electron excitation of GaAs Schottky barriersTARRICONE, L; FRIGERI, C; GOMBIA, E et al.Journal of applied physics. 1986, Vol 60, Num 5, pp 1745-1752, issn 0021-8979Article

Growth and characterization of sintered polycrystalline siliconGOMBIA, E; PANIZZIERI, R; SALVIATI, G et al.Journal of crystal growth. 1987, Vol 84, Num 4, pp 621-628, issn 0022-0248Article

Preparation and characterization of semi-insulating undoped indium phosphideFORNARI, R; BRINCIOTTI, A; GOMBIA, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 95-100, issn 0921-5107Conference Paper

The influence of the DX center on the capacitance of Schottky barriers in N-type AlGaAsGHEZZI, C; MOSCA, R; BOSACCHI, A et al.Applied surface science. 1991, Vol 50, Num 1-4, pp 400-404, issn 0169-4332, 5 p.Conference Paper

The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emissionTREVISI, G; SERAVALLI, L; FRIGERI, P et al.Microelectronics journal. 2009, Vol 40, Num 3, pp 465-468, issn 0959-8324, 4 p.Conference Paper

Investigation of GaAs/InGaP superlattices for quantum well solar cellsMAGNANINI, R; TARRICONE, L; PARISINI, A et al.Thin solid films. 2008, Vol 516, Num 20, pp 6734-6738, issn 0040-6090, 5 p.Conference Paper

Electrical properties of GaAs schottky diodes with embedded InAs self-assembled quantum dotsHASTAS, N. A; DIMITRIADIS, C. A; DOZSA, L et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 325-327Conference Paper

Electrical behaviour of epitaxial Al/n-Al_0.25Ga_0.75As junctions: effect of the composition of undoped Al_xGa_1-xAs cap layerHORVATH, ZS; BOSACCHI, A; FRANCHI, S et al.Vacuum. 1995, Vol 46, Num 8-10, pp 959-961, issn 0042-207XConference Paper

Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctionsHORVATH, ZS. J; BOSACCHI, A; FRANCHI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 429-432, issn 0921-5107Conference Paper

Effects of hydrogenation of deep and shallow levels in AlGaAs grown by MBEBOSACCHI, A; FRANCHI, S; GOMBIA, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 425-428, issn 0921-5107Conference Paper

Unexpected current lowering by a low work-function metal contact: Mg/SI―GaAsDUBECKY, F; DUBECKY, M; HUBIK, P et al.Solid-state electronics. 2013, Vol 82, pp 72-76, issn 0038-1101, 5 p.Article

Growth and deep level characterisation of undoped high resistivity CdTe crystalsZHA, M; GOMBIA, E; BISSOLI, F et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 15-18, issn 0370-1972Conference Paper

Coexistence of the DX center and other Si-related electron bound states in Al_xGa_1-xAsBARALDI, A; FRIGERI, P; GHEZZI, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 412-415, issn 0921-5107Conference Paper