EBIC investigations of defect distribution in ELOG GaN filmsYAKIMOV, E. B; VERGELES, P. S; GOVORKOV, A. V et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4916-4918, issn 0921-4526, 3 p.Conference Paper

Electrical properties and spectra of deep centers in GaN p-i-n rectifier structuresPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Journal of electronic materials. 2001, Vol 30, Num 3, pp 147-155, issn 0361-5235Article

GaN electronics for high power, high temperature applicationsPEARTON, S. J; REN, F; CHANG, P et al.The Electrochemical Society interface. 2000, Vol 9, Num 2, pp 34-39, issn 1064-8208Article

Band offsets in heterojunctions of InGaAsSb/AlGaAsSbPOLYAKOV, A. Y; MILNES, A. G; GOVORKOV, A. V et al.Solid-state electronics. 1995, Vol 38, Num 2, pp 525-529, issn 0038-1101Article

Influence des dislocations d'incompatibilité des réseaux sur l'hétérogénéité dans le volume des propriétés de luminescence et de structure des couches épitaxiques de solution solide de GaInAsFBRUK, A. S; VDOVIN, V. I; GOVORKOV, A. V et al.Kristallografiâ. 1987, Vol 32, Num 1, pp 178-182, issn 0023-4761Article

Optical properties of GaAs1-xNx alloys grown by molecular beam epitaxyALAM, J; BOTCHKAREV, A. E; GRIFFIN, J. A et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 23, pp 3477-3486, issn 1478-6435, 10 p.Article

Neutron irradiation effects in AlGaN/GaN heterojunctionsPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 523-526, issn 0921-4526, 4 p.Conference Paper

Electrical and optical properties of p-GaN films implanted with transition metal impurities : Silicon carbidePOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 17, pp 2967-2972, issn 0953-8984, 6 p.Article

Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidationPOLYAKOV, A. Y; MILNES, A. G; SMIRNOV, N. B et al.Solid-state electronics. 1994, Vol 37, Num 10, pp 1691-1694, issn 0038-1101Article

The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxyDOLGINOV, L. M; TUNITSKAYA, I. V; MILNES, A. G et al.Thin solid films. 1994, Vol 251, Num 2, pp 147-150, issn 0040-6090Article

Influence des impuretés dopantes sur la formation des couches de transition dans les structures épitaxiques d'arséniure de galliumBRUK, A. S; GOVORKOV, A. V; MIL'VIDSKIJ, M. G et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 10, pp 1792-1795, issn 0015-3222Article

Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxyPOLYAKOV, A. Y; SMIRNOV, N. B; YAKIMOV, E. B et al.Journal of alloys and compounds. 2014, Vol 617, pp 200-206, issn 0925-8388, 7 p.Article

Electrical properties and deep traps spectra in AIGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxyPROTASOV, D. Yu; TERESHCHENKO, O. E; ZHURAVLEV, K. S et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4870-4872, issn 0921-4526, 3 p.Conference Paper

Effects of Sc2O3 surface passivation on deep level spectra of AlGaN/GaN high electron mobility transistorsPOLYAKOV, A. Y; SMIRNOV, N. B; PEARTON, S. J et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 8, pp G497-G501, issn 0013-4651Article

Growth of GaBN ternary solutions by organometallic vapor phase epitaxyPOLYAKOV, A. Y; SHIN, M; SKOWRONSKI, M et al.Journal of electronic materials. 1997, Vol 26, Num 3, pp 237-242, issn 0361-5235Article

Possible mechanism of 6-methyl-2-ethyl-3-oxypyridine age-dependent effect on protein synthesis in the brainKUZNETSOV, D. A; ZAVIJALOV, N. V; GOVORKOV, A. V et al.International journal of neuroscience. 1987, Vol 32, Num 3-4, pp 695-702, issn 0020-7454Article

Etude de la formation de défauts à la surface support-couche de structures homoépitaxiques en GaAs dopées par diverses impuretésYUGOVA, T. G; VDOVIN, V. I; GANINA, N. V et al.Kristallografiâ. 1984, Vol 29, Num 5, pp 990-994, issn 0023-4761Article

Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowthPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 2923-2925, issn 0022-0248, 3 p.Conference Paper

Optical and electrical properties of AlGaN films implanted with Mn, Co, or CrPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Journal of electronic materials. 2004, Vol 33, Num 5, pp 384-388, issn 0361-5235, 5 p.Conference Paper

Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTSPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 39, Num 2, pp 79-81, issn 0921-5107Article

The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVDPOLYAKOV, A. Y; CHELNIY, A. A; SMIRNOV, N. B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 38, Num 1-2, pp 36-40, issn 0921-5107Article

Effect of substrate-surface orientation on the properties of GaAs homoepitaxial layers grown by liquid-phase epitaxyGOVORKOV, A. V; MIL'VIDSSKII, M. G; NOVIKOV, A. G et al.Soviet physics. Crystallography. 1992, Vol 37, Num 5, pp 689-692, issn 0038-5638Article

Methyl mercury-induced nonselective blocking of phosphorylation processes as a possible cause of protein synthesis inhibition in vitro and in vivoKUZNETSOV, D. A; ZAVIJALOV, N. V; GOVORKOV, A. V et al.Toxicology letters. 1987, Vol 36, Num 2, pp 153-160, issn 0378-4274Article

Influence d'un traitement thermique sur les paramètres de luminescence et électrophysiques des couches presuperficielles de lames monocristallines d'arséniure de galliumBRUK, A. S; GOVORKOV, A. V; MIL'VIDSKIJ, M. G et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 9, pp 1588-1593, issn 0015-3222Article

Neutron radiation effects in epitaxially laterally overgrown GaN filmsPOLYAKOV, A. Y; SMIRNOV, N. B; LEE, Cheul-Ro et al.Journal of electronic materials. 2007, Vol 36, Num 10, pp 1320-1325, issn 0361-5235, 6 p.Article