Radiation-Hard Dielectrics for 4H―SiC: A Comparison Between SiO₂ and Al₂O₃USMAN, Muhammad; HALLEN, Anders.IEEE electron device letters. 2011, Vol 32, Num 12, pp 1653-1655, issn 0741-3106, 3 p.Article

Bacterial vaginosis - a laboratory and clinical diagnostics enigma : Review article IIFORSUM, Urban; HALLEN, Anders; LARSSON, P. G et al.APMIS. Acta pathologica, microbiologica et immunologica Scandinavica. 2005, Vol 113, Num 3, pp 153-161, issn 0903-4641, 9 p.Article

Impact of Ionizing Radiation on the SiO₂/SiC Interface in 4H-SiC BJTsUSMAN, Muhammad; BUONO, Benedetto; HALLEN, Anders et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 12, pp 3371-3376, issn 0018-9383, 6 p.Article

Trimethylamine content in vaginal secretion and its relation to bacterial vaginosisWOLRATH, Helen; BOREN, Hans; HALLEN, Anders et al.APMIS. Acta pathologica, microbiologica et immunologica Scandinavica. 2002, Vol 110, Num 11, pp 819-824, issn 0903-4641, 6 p.Article

Cervical, urine and vaginal specimens for detection of Chlamydia trachomatis by ligase chain reaction in women: A comparisonHJELM, Eva; HALLEN, Anders; DOMEIKA, Marius et al.Acta dermato-venereologica. 2001, Vol 81, Num 4, pp 285-288, issn 0001-5555Article

Position-Dependent Bulk Traps and Carrier Compensation in 4H-SiC Bipolar Junction TransistorsUSMAN, Muhammad; NAWAZ, Muhammad; HALLEN, Anders et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 178-185, issn 0018-9383, 8 p.Article

Proceedings of the European Materials Research Society 2001-Symposium F Amorphous and Crystalline Silicon Carbide: Material and ApplicationsCALCAGNO, Lucia; HALLEN, Anders; MARTINS, Rodrigo et al.Applied surface science. 2001, Vol 184, Num 1-4, issn 0169-4332, 516 p.Conference Proceedings

Effect of photonic bandgap on luminescence from silicon nanocrystalsSYCHUGOV, Ilya; ELFSTROM, Niklas; HALLEN, Anders et al.Optics letters. 2007, Vol 32, Num 13, pp 1878-1880, issn 0146-9592, 3 p.Article

Aluminium nitride deposition on 4H-SiC by means of physical vapour depositionWOLBORSKI, Maciej; ROSEN, Daniel; HALLEN, Anders et al.Thin solid films. 2006, Vol 515, Num 2, pp 456-459, issn 0040-6090, 4 p.Conference Paper

Amorphous silicon-carbon alloys: a promising but complex and very diversified series of materialsSOLOMON, I.Applied surface science. 2001, Vol 184, Num 1-4, pp 3-7, issn 0169-4332Conference Paper

Silicon carbide: from amorphous to crystalline materialFOTI, G.Applied surface science. 2001, Vol 184, Num 1-4, pp 20-26, issn 0169-4332Conference Paper

C adsorption and diffusion at the Si(0 0 1) surface: implications for SiC growthCICERO, Giancarlo; CATELLANI, Alessandra.Applied surface science. 2001, Vol 184, Num 1-4, pp 113-117, issn 0169-4332Conference Paper

A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperaturesCAPANO, M. A.Applied surface science. 2001, Vol 184, Num 1-4, pp 317-322, issn 0169-4332Conference Paper

Writing cobalt FIB implantation into 6H:SiCBISCHOFF, L; TEICHERT, J.Applied surface science. 2001, Vol 184, Num 1-4, pp 336-339, issn 0169-4332Conference Paper

Planar InAs/AlSb HEMTs With Ion-Implanted IsolationMOSCHETTI, Giuseppe; NILSSON, Per-Ake; HALLEN, Anders et al.IEEE electron device letters. 2012, Vol 33, Num 4, pp 510-512, issn 0741-3106, 3 p.Article

Stroke Asymmetry of Tilted Superhydrophobic Ion Track TexturesSPOHR, Reimar; SHARMA, Gunjana; FORSBERG, Pontus et al.Langmuir. 2010, Vol 26, Num 9, pp 6790-6796, issn 0743-7463, 7 p.Article

Correlations between properties and applications of the CVD amorphous silicon carbide filmsKLEPS, Irina; ANGELESCU, Anca.Applied surface science. 2001, Vol 184, Num 1-4, pp 107-112, issn 0169-4332Conference Paper

Laser crystallization of amorphous SiC thin films on glassURBAN, S; FALK, F.Applied surface science. 2001, Vol 184, Num 1-4, pp 356-361, issn 0169-4332Conference Paper

Tuning magnetic properties by hydrogen implantation in amorphous Fe_100-xZr_x thin filmsZAMANI, Atieh; HALLEN, Anders; NORDBLAD, Per et al.Journal of magnetism and magnetic materials. 2013, Vol 346, pp 138-141, issn 0304-8853, 4 p.Article

Contact formation in SiC devicesPECZ, B.Applied surface science. 2001, Vol 184, Num 1-4, pp 287-294, issn 0169-4332Conference Paper

Peculiarities of preparing a-SiC:H films from methyltrichlorosilaneRUSAKOV, G. V; IVASHCHENKO, L. A; IVASHCHENKO, V. I et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 128-134, issn 0169-4332Conference Paper

Non-Rutherford backscattering studies of SiC/SIMOX structuresCHEN, K. W; YU, Y. H; ZOU, S. C et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 178-182, issn 0169-4332Conference Paper

Particle and light-induced luminescence degradation in a-SiC:HREITANO, R; BAERI, A; MUSUMECI, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 190-193, issn 0169-4332Conference Paper

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H-SiCHJELM, Mats; BERTILSSON, Kent; NILSSON, Hans-Erik et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 194-198, issn 0169-4332Conference Paper

Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layersABERG, D; HALLEN, A; PELLEGRINO, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 263-267, issn 0169-4332Conference Paper