Antique technologyHARRIS, J. S.Journal of technical writing and communication. 1997, Vol 27, Num 3, pp 325-333, issn 0047-2816Article

Technical shibboleths = Mots d'ordre techniquesHARRIS, J. S.Journal of technical writing and communication. 1998, Vol 28, Num 2, pp 217-222, issn 0047-2816Article

Guest essay: the aversion factor in technical communicationHARRIS, J. S.Journal of technical writing and communication. 1988, Vol 18, Num 3, pp 199-205, issn 0047-2816Article

Ground anchorages: drillhole accuracy determination device ― The Fotobor = Acnrage du terrain: appareil pour déterminer la précision des forages ― Le FotoborHARRIS, J. S.Proceedings - Institution of Civil Engineers. Part 1. Design and construction. 1987, Vol 82, pp 635-638, issn 0307-8353Article

Why doctors do what they do : determinants of physician behaviorHARRIS, J. S.Journal of occupational medicine. 1990, Vol 32, Num 12, pp 1207-1220, issn 0096-1736, 14 p.Article

Development, use, and evaluation of clinical practice guidelinesHARRIS, J. S.Journal of occupational and environmental medicine. 1997, Vol 39, Num 1, pp 23-34, issn 1076-2752Article

Looking backwardHARRIS, J. S.Journal of technical writing and communication. 1996, Vol 26, Num 2, pp 131-137, issn 0047-2816Article

The cost effectiveness of health promotion programsHARRIS, J. S.Journal of occupational medicine. 1991, Vol 33, Num 3, pp 327-330, issn 0096-1736, 4 p.Article

Watching the numbers : basic data for health care managementHARRIS, J. S.Journal of occupational medicine. 1991, Vol 33, Num 3, pp 275-278, issn 0096-1736, 4 p.Article

An Airplane is not a BirdHARRIS, J. S.American heritage of invention & technology. 1989, Vol 5, Num 2, pp 18-22, issn 8756-7296Article

The naming of parts: an examination of the origins of technical and scientific vocabularyHARRIS, J. S.Journal of technical writing and communication. 1984, Vol 14, Num 3, pp 183-191, issn 0047-2816Article

Side-coupled fibre semiconductor laserKHALILI, A; HARRIS, J. S.Electronics Letters. 2005, Vol 41, Num 20, pp 1128-1130, issn 0013-5194, 3 p.Article

Parasitic conduction current in the passivation ledge of AlGaAs/GaAs heterojunction bipolar transistorsLIU, W; HARRIS, J. S.Solid-state electronics. 1992, Vol 35, Num 7, pp 891-895, issn 0038-1101Article

Effect of Si doping in AlAs barrier layers of AlAs-GaAs-AlAs double-barrier resonant tunneling diodesPENG CHENG; HARRIS, J. S.Applied physics letters. 1989, Vol 55, Num 6, pp 572-574, issn 0003-6951, 3 p.Article

Current dependence of base-collector capacitance of bipolar transistorsLIU, W; HARRIS, J. S.Solid-state electronics. 1992, Vol 35, Num 8, pp 1051-1057, issn 0038-1101Article

Influence of dislocations on the threshold current density of AlGaAs/GaAs strained quantum-well lasersITO, H; HARRIS, J. S.Japanese journal of applied physics. 1994, Vol 33, Num 12A, pp 6516-6517, issn 0021-4922, 1Article

Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistorsLIU, W; HARRIS, J. S.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 12, pp 2726-2732, issn 0018-9383Article

A wet etching technique for accurate etching of GaAs/AlAs distributed Bragg reflectorsBACHER, K; HARRIS, J. S.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2386-2388, issn 0013-4651Article

Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixingYAMADA, N; HARRIS, J. S.Applied physics letters. 1992, Vol 60, Num 20, pp 2463-2465, issn 0003-6951Article

Effects of emitter-base contact spacing on the current gain in heterojunction bipolar transistorsLIU, W; HARRIS, J. S.Japanese journal of applied physics. 1992, Vol 31, Num 8, pp 2349-2351, issn 0021-4922, 1Article

Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistorsCOSTA, D; HARRIS, J. S.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 10, pp 2383-2394, issn 0018-9383Article

Iron nitride mask and reactive ion etching of GaN films : III-V nitrides and silicon carbideHEON LEE; HARRIS, J. S.Journal of electronic materials. 1998, Vol 27, Num 4, pp 185-189, issn 0361-5235Article

Vapor phase epitaxy of GaN using GaCl₃/N₂ and NH₃/N₂LEE, H; HARRIS, J. S.Journal of crystal growth. 1996, Vol 169, Num 4, pp 689-696, issn 0022-0248Article

Cut-off frequency and d.c. current gain of heterojunction bipolar transistorsLIU, W; HARRIS, J. S.International journal of electronics. 1993, Vol 74, Num 3, pp 401-406, issn 0020-7217Article

Critical passivation ledge thickness in AlGaAs/GaAs heterojunction bipolar transistorsLIU, W; HARRIS, J. S.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 6-9, issn 1071-1023Article