IMPROVEMENT OF PLANAR GAAS DEVICES BY CONTROLLING THE PROPERTIES OF THE EPILAYER AND THE EPILAYER-SUBSTRATE INTERFACE.KAUFMANN LMF; HEIME K.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 107-110; BIBL. 3 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

PHODO-F.E.T. METHOD: HIGH-RESOLUTION DEEP-LEVEL MEASUREMENT TECHNIQUE USING A M.E.S.F.E.T. STRUCTURETEGUDE FJ; HEIME K.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 1; PP. 22-23; BIBL. 5 REF.Article

INFLUENCE OF HEAT-TREATMENT ON THE MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF THE GAAS EPILAYER-SUBSTRATE INTERFACE.KAUFMANN LMF; HEIME K; BURCHARD WG et al.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 34; NO 2; PP. 289-297; BIBL. 32 REF.Article

THE INFLUENCE OF THE GROWTH PROCESS ON DOPING PROFILE AND MOBILITY PROFILE DURING LPE OF THE PSEUDOBINARY SN-GAAS SYSTEMKOENIG U; HEIME K; KUBALEK E et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 296-299; BIBL. 7 REF.Article

A NEW CONCEPT FOR MICROSTRIP-INTEGRATED GAAS SCHOTTKY-DIODES.WORTMANN A; HEIME K; BENEKING H et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 4; PP. 198-200; BIBL. 8 REF.Article

I.C.-COMPATIBLE COMPLETELY PLANAR GAAS M.E.S.F.E.T.S. BY SELECTIVE DIFFUSIONARNOLD N; DAEMBKES H; HEIME K et al.1980; ELECTRON LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 24; PP. 923-924; BIBL. 3 REF.Article

ORIENTATION DEPENDENT GROWTH AND LUMINESCENCE OF SELECTIVE GAAS-SN LPE.KONIG U; LANGMANN U; HEIME K et al.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 36; NO 1; PP. 165-170; BIBL. 22 REF.Article

InGaAs junction FETs with frequency limit (MAG=1) above 30 GHzSCHMITT, R; HEIME, K.Electronics Letters. 1985, Vol 21, Num 10, pp 449-451, issn 0013-5194Article

VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS.HEIME K; KONIG U; KOHN E et al.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 835-837; H.T. 1; ABS. ALLEM.; BIBL. 8 REF.Article

An improved model to explain ohmic contact resistance of n-GaAs and other semiconductorsWU DINGFEN; WANG DENING; HEIME, K et al.Solid-state electronics. 1986, Vol 29, Num 5, pp 489-494, issn 0038-1101Article

Selective growth of SiGe structures in the sub 100 nm range using low pressure vapor phase epitaxySCHMIDT, G; TUZINSKI, R; HEIME, K et al.Journal of crystal growth. 1995, Vol 154, Num 1-2, pp 189-192, issn 0022-0248Article

Vapor pressures of Y, Ba, Cu precursors for the growth of YBa₂Cu₃O₇ by MOVPEWAFFENSCHMIDT, E; MUSOLF, J; HEUKEN, M et al.Journal of superconductivity. 1992, Vol 5, Num 2, pp 119-125, issn 0896-1107Article

Comparative study on the low pressue metalorganic vapor phase epitaxial growth of InSb on GaAs with trimethylantimony and triethylantimony as Sb precursorsBEHET, M; STOLL, B; HEIME, K et al.Journal of crystal growth. 1994, Vol 135, Num 3-4, pp 434-440, issn 0022-0248Article

Schottky barrier enhancement of n-GaInAs with GaInP layerKORDOS, P; NOVAK, J; KAYSER, O et al.Physica status solidi. A. Applied research. 1991, Vol 127, Num 1, pp K25-K28, issn 0031-8965Article

Influence of p-InP buffer layers on submicron InGaAs/InP junction field-effect transistorsSTEINER, K; SEILER, U; HEIME, K et al.Applied physics letters. 1988, Vol 53, Num 25, pp 2513-2515, issn 0003-6951, 3 p.Article

Carrier lifetime measurement in semiconductor lasers using injection curren pulses of gaussian shapeMESQUIDA KÜSTERS, A; GLADE, M; HEIME, K et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 12, pp 2669-2673, issn 0018-9197Article

Diffusion in III-V semiconductors from spin-on film sourcesARNOLD, N; SCHMITT, R; HEIME, K et al.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 3, pp 443-474, issn 0022-3727Article

Formation of Si/SiGe nanostructures by selective low pressure VPESCHMIDT, G; TUZINSKI, R; HEIME, K et al.Physica status solidi. A. Applied research. 1995, Vol 151, Num 1, pp 165-169, issn 0031-8965Article

Calculation of lateral distribution of lattice constant for horizontal MOVPE grown quaternary alloysXU, J; CHENG, X. J; BEHRES, A et al.Journal of crystal growth. 1998, Vol 193, Num 1-2, pp 50-54, issn 0022-0248Article

Low-frequency noise measurements on n-InGaAs/p-InP junction field-effect transistor structuresKUGLER, S; STEINER, K; SEILER, U et al.Applied physics letters. 1988, Vol 52, Num 2, pp 111-113, issn 0003-6951Article

Deep-level analysis in (AlGa)As-GaAs 2-D electron gas devices by means of low-frequency noise measurementsLORECK, L; DÄMBKES, H; HEIME, K et al.IEEE electron device letters. 1984, Vol 5, Num 1, pp 9-11, issn 0741-3106Article

Selectively doped n-Al_xGa_1-xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors. II: Hot electron effectsSCHUBERT, E. F; PLOOG, K; DÄMBKES, H et al.Applied physics. A, Solids and surfaces. 1984, Vol 33, Num 3, pp 183-193, issn 0721-7250Article

Fabry-Pérot oscillations in epitaxial ZnSe layersWEBER, T; STOLZ, H; VON DER OSTEN, W et al.Semiconductor science and technology. 1995, Vol 10, Num 8, pp 1113-1116, issn 0268-1242Article

Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPESTEIN, A; PÜTTJER, D; BEHRES, A et al.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 5, pp 257-260, issn 1350-2433Conference Paper

Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diodeSCHINELLER, B; JUNAS, Y; HEUKEN, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 34-38, issn 0921-5107Conference Paper