Ultralow Surface Recombination Velocity in InP Nanowires Probed by Terahertz SpectroscopyJOYCE, Hannah J; WONG-LEUNG, Jennifer; JOHNSTON, Michael B et al.Nano letters (Print). 2012, Vol 12, Num 10, pp 5325-5330, issn 1530-6984, 6 p.Article

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature processJOYCE, Hannah J; QIANG GAO; HOE TAN, H et al.Nano letters (Print). 2007, Vol 7, Num 4, pp 921-926, issn 1530-6984, 6 p.Article

Characterization of Semiconductor Nanowires Using Optical TweezersREECE, Peter J; WEN JUN TOE; FAN WANG et al.Nano letters (Print). 2011, Vol 11, Num 6, pp 2375-2381, issn 1530-6984, 7 p.Article

Photoluminescence study of optically trapped InP semiconductor nanowiresFAN WANG; WEN JUN TOE; PAIMAN, Suriati et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7762, issn 0277-786X, isbn 978-0-8194-8258-7, 1Vol, 77620R.1-77620R.6Conference Paper

Self-Healing of Fractured GaAs NanowiresYANBO WANG; JOYCE, Hannah J; QIANG GAO et al.Nano letters (Print). 2011, Vol 11, Num 4, pp 1546-1549, issn 1530-6984, 4 p.Article

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowiresTHANG BA HOANG; TITOVA, Lyubov V; YARRISON-RICE, Jan M et al.Nano letters (Print). 2007, Vol 7, Num 3, pp 588-595, issn 1530-6984, 8 p.Article

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy : TERAHERTZ NANOTECHNOLOGYJOYCE, Hannah J; DOCHERTY, Callum J; QIANG GAO et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 21, issn 0957-4484, 214006.1-214006.7Article

Taper-Free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature ProcessJUNG HYUK KIM; SO RA MOON; HOE TAN, H et al.Crystal growth & design. 2012, Vol 12, Num 1, pp 135-141, issn 1528-7483, 7 p.Article

Unexpected Benefits of Rapid Growth Rate for III-V NanowiresJOYCE, Hannah J; QIANG GAO; YARRISON-RICE, Jan M et al.Nano letters (Print). 2009, Vol 9, Num 2, pp 695-701, issn 1530-6984, 7 p.Article

Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth ParametersJOYCE, Hannah J; WONG-LEUNG, Jennifer; QIANG GAO et al.Nano letters (Print). 2010, Vol 10, Num 3, pp 908-915, issn 1530-6984, 8 p.Article

Polarity-driven Nonuniform Composition in InGaAs NanowiresGUO, Ya-Nan; BURGESS, Timothy; QIANG GAO et al.Nano letters (Print). 2013, Vol 13, Num 11, pp 5085-5089, issn 1530-6984, 5 p.Article

Direct Observation of Charge-Carrier Heating at WZ―ZB InP Nanowire HeterojunctionsCHAW KEONG YONG; WONG-LEUNG, Jennifer; JOYCE, Hannah J et al.Nano letters (Print). 2013, Vol 13, Num 9, pp 4280-4287, issn 1530-6984, 8 p.Article

Defect-Free <110> Zinc-Blende Structured InAs Nanowires Catalyzed by PalladiumHONGYI XU; YONG WANG; YANAN GUO et al.Nano letters (Print). 2012, Vol 12, Num 11, pp 5744-5749, issn 1530-6984, 6 p.Article

Strong Carrier Lifetime Enhancement in GaAs Nanowires Coated with Semiconducting PolymerCHAW KEONG YONG; NOORI, Keian; QIANG GAO et al.Nano letters (Print). 2012, Vol 12, Num 12, pp 6293-6301, issn 1530-6984, 9 p.Article

Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band StructureMONTAZERI, Mohammad; WADE, Aaron; FICKENSCHER, Melodie et al.Nano letters (Print). 2011, Vol 11, Num 10, pp 4329-4336, issn 1530-6984, 8 p.Article

Electron Mobilities Approaching Bulk Limits in Surface-Free GaAs NanowiresJOYCE, Hannah J; PARKINSON, Patrick; NIAN JIANG et al.Nano letters (Print). 2014, Vol 14, Num 10, pp 5989-5994, issn 1530-6984, 6 p.Article

Growth of Straight InAs-on-GaAs Nanowire HeterostructuresMESSING, Maria E; WONG-LEUNG, Jennifer; ZANOLLI, Zeila et al.Nano letters (Print). 2011, Vol 11, Num 9, pp 3899-3905, issn 1530-6984, 7 p.Article

Direct Measure of Strain and Electronic Structure in GaAs/GaP Core—Shell NanowiresMONTAZERI, Mohammad; FICKENSCHER, Melodie; JIN ZOU et al.Nano letters (Print). 2010, Vol 10, Num 3, pp 880-886, issn 1530-6984, 7 p.Article

Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire HomostructuresPEMASIRI, Kuranananda; MONTAZERI, Mohammad; XIN ZHANG et al.Nano letters (Print). 2009, Vol 9, Num 2, pp 648-654, issn 1530-6984, 7 p.Article

Transient terahertz conductivity of GaAs nanowiresPARKINSON, Patrick; LLOYD-HUGHES, James; QIANG GAO et al.Nano letters (Print). 2007, Vol 7, Num 7, pp 2162-2165, issn 1530-6984, 4 p.Article

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowiresTITOVA, Lyubov V; THANG BA HOANG; JIN ZOU et al.Nano letters (Print). 2007, Vol 7, Num 11, pp 3383-3387, issn 1530-6984, 5 p.Article

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowiresKIM, Yong; JOYCE, Hannah J; QIANG GAO et al.Nano letters (Print). 2006, Vol 6, Num 4, pp 599-604, issn 1530-6984, 6 p.Article

Light emission from 1D silicon photonic crystals containing erbiumRECCE, Peter J; GAL, Michael; LERONDEL, Gilles et al.SPIE proceedings series. 2004, pp 126-134, isbn 0-8194-5265-3, 9 p.Conference Paper