INTERACTIVE PROGRAMMING AS A CAD TASK; SOME REMARKS ON SYSTEM STRUCTURES, PREREQUISITES, AND IMPLICATIONSHOFFMANN HJ.1981; APPLIED SYSTEMS AND CYBERNETICS. INTERNATIONAL CONGRESS ON APPLIED SYSTEMS RESEARCH AND CYBERNETICS/1980/ACAPULCO; USA/GBR/FRA; NEW YORK; OXFORD; PARIS: PERGAMON PRESS; DA. 1981; PP. 2217-2222; BIBL. 2 P.Conference Paper

ON THE DENSITY OF LOCALIZED LEVELS IN AMORPHOUS SILICONHOFFMANN HJ.1979; APPL. PHYS.; DEU; DA. 1979; VOL. 18; NO 4; PP. 427-429; BIBL. 2 REF.Article

HEOS 2, DER FUENFTE ESRO-SATELLIT = HEOS 2, LE CINQUIEME SATELLITE ESROHOFFMANN HJ.1972; STERNE U. WELTRAUM; DTSCH.; DA. 1972; VOL. 11; NO 10; PP. 275-278Serial Issue

CHARGE CARRIER STATISTICS OF SEMICONDUCTORS CONTAINING DEFECTS WITH NEGATIVE ELECTRONIC CORRELATION ENERGYHOFFMANN HJ.1982; APPL. PHYS., A, SOLIDS SURF.; DEU; DA. 1982; VOL. 27; NO 1; PP. 39-47; BIBL. 12 REF.Article

RECOMBINATION KINETICS OF ELECTRONS WITH ALPHA -CENTERS IN COLORED ALKALI HALIDESHOFFMANN HJ.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 1; PP. 215-224; ABS. GER; BIBL. 23 REF.Article

DEFECT-LEVEL ANALYSIS OF SEMICONDUCTORS BY A NEW DIFFERENTIAL EVALUATION OF N(1/T)-CHARACTERISTICSHOFFMANN HJ.1979; APPL. PHYS.; DEU; DA. 1979; VOL. 19; NO 3; PP. 307-312; BIBL. 7 REF.Article

DIFFERENTIAL ANALYSIS OF THE FREE-CHARGE-CARRIER CONCENTRATION IN SEMICONDUCTORS CONTAINING LOCALIZED LEVELS WITH NEGATIVE ELECTRONIC CORRELATION ENERGYHOFFMANN HJ.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 10; PP. 5603-5606; BIBL. 11 REF.Article

NEGATIVE DIFFERENTIAL CONDUCTIVITY IN PHOTOCONDUCTORS AT EXTREMELY LOW FIELD STRENGTHS.HOFFMANN HJ.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 1; PP. 171-177; ABS. ALLEM.; BIBL. 8 REF.Article

ON THE ANALOGY BETWEEN LOCAL MODES AND COLOR CENTER ABSORPTION BANDSHOFFMANN HJ.1980; J. PHYSIQUE; ISSN 0302-0738; FRA; DA. 1980; VOL. 41; NO 4; PP. 359-364; ABS. FRE; BIBL. 41 REF.Article

MASSNAHMEN BEIM EINLEITEN CADMIUMHALTIGER ABWAESSER IN KLAERANLAGEN UND VORFLUTER = MESURES LIEES AU REJET D'EAUX USEES CONTENANT DU CADMIUM DANS LES STATIONS D'EPURATION ET LES COURS D'EAUHOFFMANN HJ.1982; HAUSTECH. BAUPHYS. UMWELTTECH.; ISSN 0172-8199; DEU; DA. 1982; VOL. 103; NO 6; PP. 311-317; BIBL. 8 REF.Article

ELECTRONIC PROPERTIES OF SEMICONDUCTORS WITH NEGATIVE-U CENTERSHOFFMANN HJ.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 45; NO 21; PP. 1733-1737; BIBL. 15 REF.Article

A COMMENT CONCERNING THE MONOTONOUS SHIFT OF THE FERMI LEVEL WITH INCREASING TEMPERATURE IN SEMICONDUCTORSHOFFMANN HJ.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 78; NO 2; PP. 175-177; BIBL. 5 REF.Article

TRANSIENT BLEACHING OF THE F-BAND IN ALKALI HALIDES.DOKTER G; HOFFMANN HJ.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 76; NO 1; PP. 241-249; ABS. ALLEM.; BIBL. 27 REF.Article

A NEW TYPE OF ELECTRICAL INSTABILITY IN CDS.GILBERT F; HOFFMANN HJ.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 2; PP. 543-546; ABS. ALLEM.; BIBL. 9 REF.Article

ANALYSIS OF LOCALIZED LEVELS IN SEMICONDUCTING CDS FROM GENERATION-RECOMBINATION NOISE SPECTRA.HOFFMANN HJ; SOHN W.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 1; PP. 237-246; ABS. ALLEM.; BIBL. 25 REF.Article

SIMULATION OF SWITCHING CIRCUITS BY SSM - A NEW HARDWARE SIMULATION LANGUAGE.GOERKE W; HOFFMANN HJ.1975; IN: INT. SYMP. COMPUT. HARDWARE DESCR. LANG. AND APPL. PROC.; NEW YORK, N.Y.: 1975; NEW YORK; ASSOC. COMPUT. MACH.; DA. 1975; PP. 125-133; BIBL. 8 REF.Conference Paper

DARSTELLUNG UND EIGENSCHAFTEN VON 2-BENZOTHIAZOLYLSILANEN = PREPAR. ET PROPR. DES BENZOTHIAZOLYL-2 SILANESJUTZI P; HOFFMANN HJ.1973; CHEM. BER.; DTSCH.; DA. 1973; VOL. 106; NO 2; PP. 594-605; ABS. ANGL.; BIBL. 17 REF.Serial Issue

INVESTIGATION OF TRAP LEVELS IN GAAS SCHOTTKY DIODES BY ADMITTANCE SPECTROSCOPYHOFFMANN HJ; REISSER H.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. K171-K174; BIBL. 10 REF.Article

BASENSTABILISIERTE GERMYLENE. III. STICKSTOFF-GERMANIUM-YLID-KOMPLEXE VON CHROM, MOLYBDAEN UND WOLFRAM = GERMYLENES STABILISES PAR LES BASES. III. COMPLEXES AZOTE-GERMANIUM-YLURE DE CR, MO ET WJUTZI P; HOFFMANN HJ.1974; CHEM. BER.; DTSCH.; DA. 1974; VOL. 107; NO 11; PP. 3616-3623; ABS. ANGL.; BIBL. 10 REF.Article

GENERATION-RECOMBINATION NOISE AND DEFECT LEVELS IN SEMICONDUCTING CDSE CRYSTALSHOFFMANN HJ; HUBER E.1981; PHYSICA B+C; ISSN 0378-4363; NLD; DA. 1981; VOL. 111; NO 2-3; PP. 249-256; BIBL. 15 REF.Article

KONSTRUKTION VON HYDRATHUELLEN UEBER ELEKTROSTATISCHE POTENTIALE-FORMAMID = CONSTRUCTION DES COUCHES D'HYDRATATION AUTOUR DES POTENTIELS ELECTROSTATIQUES - LE FORMAMIDEPEINEL G; HOFFMANN HJ.1979; WISSENSCH. Z. KARL-MARX-UNIV. LEIPZIG, MATH.-NATURWISSENSCH. REIHE; DDR; DA. 1979; VOL. 28; NO 6; PP. 611-616; BIBL. 15 REF.Article

MUTANTS AFFECTING POSITION-EFFECT HETEROCHROMATINIZATION IN DROSOPHILA MELANOGASTERREUTER G; WERNER W; HOFFMANN HJ et al.1982; CHROMOSOMA; ISSN 0009-5915; DEU; DA. 1982; VOL. 85; NO 4; PP. 539-551; BIBL. 15 REF.Article

BASENSTABILISIERTE GERMYLENE. II. DARSTELLUNG UND EIGENSCHAFTEN VON BENZOTHIAZOLDICHLORGERMYLEN = GERMYLENE STABILISE PAR LES BASES. II. PREPARATION ET PROPRIETES DU BENZOTHIAZOLEDICHLOROGERMYLENEJUTZI P; HOFFMANN HJ; WYES KH et al.1974; J. ORGANOMETAL. CHEM.; SWITZ.; DA. 1974; VOL. 81; NO 3; PP. 341-350; ABS. ANGL.; BIBL. 17 REF.Article

FLICKERN VON LEUCHSTOFFLAMPEN DURCH TONFREQUENZ-RUNDSTEUERIMPULSE = LES FLUCTUATIONS DANS LES LAMPES FLUORESCENTES DUES AUX SIGNAUX DE TELECOMMANDE BFHOFFMANN HJ; SCHMITT HG; WINKLER A et al.1981; ETZ, ELEKTROTECH. Z. (BERLIN, WEST); ISSN 0170-1711; DEU; DA. 1981; VOL. 102; NO 24; PP. 1268-1272; BIBL. 8 REF.Article

TRIGONOCEPHALY AND ASSOCIATED MINOR ANOMALIES IN MOTHER AND SONHUNTER AGW; RUDD NL; HOFFMANN HJ et al.1976; J. MED. GENET.; G.B.; DA. 1976; VOL. 13; NO 1; PP. 77-79; BIBL. 9 REF.Article