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CONTRIBUTION A L'ETUDE DES SURFACES VICINALES DE GAAS; APPLICATION A L'HOMOEPITAXIE.HOTTIER F.1976; ; S.L.; DA. 1976; PP. (54P.); H.T. 34; BIBL. 2 P.; (THESE DOCT. 3E CYCLE, SPEC. PHYS. SOLIDES; PARIS-SUD)Thesis

CONTRIBUTION TO THE STUDY OF THE VICIMAL SURFACES OF GAAS; APPLICATION TO HOMOEPITAXY.HOTTIER F.1976; PHILIPS RES. REP.; NETHERL.; DA. 1976; VOL. 31; NO 5; PP. 466-479; BIBL. 10 REF.Article

ANALYSE IN SITU PAR ELLIPSOMETRIE DE LA NUCLEATION ET DE LA CROISSANCE DE SILICIUM POLYCRISTALLINHOTTIER F.1981; ACTA ELECTRONICA; ISSN 0001-558X; FRA; DA. 1981-1982; VOL. 24; NO 2; PP. 153-165; ABS. ENG/GER; BIBL. 25 REF.Article

METHODE D'ANALYSE IN SITU D'UNE INTERFACE DE CROISSANCETHEETEN JB; HOTTIER F.1978; ACTA ELECTRON.; FRA; DA. 1978 PUBL. 1979; VOL. 21; NO 3; PP. 231-238; ABS. ENG/GER; BIBL. 12 REF.Article

MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH4/H2 AT REDUCED PRESSURESCADORET R; HOTTIER F.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 2; PP. 259-274; BIBL. 26 REF.Article

ANALYSIS OF SILICON CRYSTAL GROWTH USING LOW PRESSURE CHEMICAL VAPOUR DEPOSITIONHOTTIER F; CADORET R.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 2; PP. 245-258; BIBL. 27 REF.Article

ETUDE, A L'ECHELLE DE LA MONOCOUCHE, DES MECANISMES DE L'EPITAXIE EN PHASE VAPEUR A L'AIDE DES TECHNIQUES D'ANALYSE DE SURFACE.THEETEN JB; HOTTIER F.1976; DGRST-7470464; FR.; DA. 1976; PP. 1-21; H.T. 7; BIBL. DISSEM.; (RAPP. FINAL, ACTION CONCERTEE: PHYS. ELECTRON)Report

IBC 94 : une rétrospective = IBC 94 : a retrospectiveHOTTIER, F.Revue annuelle - LEP. 1994, pp 39-41, issn 0750-6287Article

ASSESSMENT BY IN SITU ELLIPSOMETRY OF COMPOSITION PROFILES OF GA1-XALXAS-GAAS HETEROSTRUCTURESHOTTIER F; LAURENCE G.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 863-865; BIBL. 8 REF.Article

IN SITU SURFACE ANALYSIS OF THE VAPOR PHASE EPITAXY OF GAASTHEETEN JB; HOTTIER F.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 3; PP. 450-460; BIBL. 19 REF.Article

ETUDE MICROSCOPIQUE DE L'INTERFACE GAZ-SOLIDE EN COURS DE CROISSANCE EN PHASE VAPEUR.THEETEN JB; HOTTIER F.1977; DGRST-7670779; FR.; DA. 1977; PP. 1-20; H.T. 15; BIBL. 13 REF.; (RAPP. FINAL, ACTION CONCERTEE: PHYS. ELECTRON.)Report

ON THE ROLE OF CHLORINE IN THE VAPOUR PHASE EPITAXY OF (100) GAAS AS EVIDENCE BY LEED AND RHEED.THEETEN JB; HOTTIER F.1976; SURF. SCI.; NETHERL.; DA. 1976; VOL. 58; NO 2; PP. 583-589; BIBL. 12 REF.Article

INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRYASPNES DE; THEETEN JB; HOTTIER F et al.1979; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1979; VOL. 20; NO 8; PP. 3292-3302; BIBL. 53 REF.Article

APPAREILLAGE ET METHODOLOGIE D'ETUDE DES SURFACES DE GAAS EN COURS DE CROISSANCE EN EPITAXIE PHASE VAPEUR.THEETEN JB; HOTTIER F; PARADAN H et al.1976; REV. PHYS. APPL.; FR.; DA. 1976; VOL. 11; NO 5; PP. 587-595; ABS. ANGL.; BIBL. 16 REF.Article

IN SITU MONITORING BY ELLIPSOMETRY OF METALORGANIC EPITAXY OF GAALAS-GAAS SUPERLATTICEHOTTIER F; HALLAIS J; SIMONDET F et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1599-1602; BIBL. 9 REF.Article

ELLIPSOMETRIC ASSESSMENT OF (GA, AL) AS/GAAS EPITAXIAL LAYERS DURING THEIR GROWTH IN AN ORGANOMETALLIC VPE SYSTEMTHEETEN JB; HOTTIER F; HALLAIS J et al.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 2; PP. 245-252; BIBL. 6 REF.Article

ON-TIME DETERMINATION OF THE COMPOSITION OF III-V TERNARY LAYERS DURING VPE GROWTH.THEETEN JB; HOTTIER F; HALLAIS J et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 32; NO 9; PP. 576-578; BIBL. 6 REF.Article

ULTRASONIC SIGNAL PROCESSING FOR IN VIVO ATTENUATION MEASUREMENT: SHORT TIME FOURIER ANALYSISFINK M; HOTTIER F; CARDOSO JF et al.1983; ULTRASONIC IMAGING; ISSN 0161-7346; USA; DA. 1983; VOL. 5; NO 2; PP. 117-135; BIBL. 17 REF.Article

CHEMICAL VAPOUR DEPOSITION OF SILICON UNDER REDUCED PRESSURE IN A HOT-WALL REACTOR: EQUILIBRIUM AND KINETICSLANGLAIS F; HOTTIER F; CADORET R et al.1982; J. CRYST. GROWTH; NLD; DA. 1982; VOL. 56; NO 3; PP. 659-672; BIBL. 21 REF.Article

COMPARATIVE LEED AND RHEED EXAMINATION OF STEPPED SURFACES; APPLICATION TO CU (111) AND GAAS (001) VICINAL SURFACES.HOTTIER F; THEETEN JB; MASSON A et al.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 65; NO 2; PP. 563-577; BIBL. 20 REF.Article

Estimation de l'atténuation des ultrasons par les tissus biologiques = Estimation of ultrasound attenuation in biological tissuesHOTTIER, F; BERNATETS, J.-L.Acta electronica. 1984, Vol 26, Num 1-2, pp 33-58, issn 0001-558XArticle

Mechanism of Si polycrystalline growth on a Si3N4 substrate from SiH4/H2 at reduced pressuresCADORET, R; HOTTIER, F.Journal of crystal growth. 1983, Vol 64, Num 3, pp 583-592, issn 0022-0248Article

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