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MODELE MATHEMATIQUE DE LA FRAGMENTATION AU COURS DU BROYAGE DES MINERAIS. SON APPLICATION PAR LA DETERMINATION DES FONCTIONS SELECTION ET BROYAGE A PARTIR DE CARACTERES PHYSIQUESHUYET G.1974; ; S.L.; DA. 1974; PP. 1-83; BIBL. 5 P.; (THESE DOCT. UNIV.; NANCY 1)Thesis

DETERMINATION DE CERTAINES CARACTERISTIQUES PHYSIQUES DE CINQ MINERAIS TRAITES EN LAVERIE. PERSPECTIVES DE RELATIONS ENTRE LES CARACTERISTIQUES PHYSIQUES ET L'APTITUDE A LA FRAGMENTATION.HUYET G.1969; NANCY, D.E.S.; 1969(7), P. 1 A 123Thesis

DETERMINATION DE CERTAINES CARACTERISTIQUES PHYSIQUES DE CINQ MINERAIS TRAITES EN LAVERIE. PERSPECTIVES DE RELATIONS ENTRE LES CARACTERISTIQUES PHYSIQUES ET L'APTITUDE A LA FRAGMENTATION.HUYET G.1969; NANCY, D.E.S.; 1969, P. 1 A 123Thesis

LIBERATION ANALYSIS BY MEANS OF IMAGE ANALYSERS: THEORY AND APPLICATIONSBARBERY G; HUYET G; GATEAU C et al.1981; DEVELOP. MINER. PROCESSG; NLD; DA. 1981; VOL. 2; PART. A; PP. 568-599; ABS. FRE/GER/RUS; BIBL. 18 REF.Conference Paper

APPLICATION DE LA MINERALOGIE QUANTITATIVE A L'ETUDE DE LA FISSURATION DES ROCHES.GATEAU C; HUYET G; PREVOSTEAU JM et al.sdIN: 4. REUN. ANNU. SCI. TERRE; PARIS; 1976; PARIS SOC. GEOL. FR.; RESUME,1976, P. 187Miscellaneous

SYNTHESE DES RESULTATS DES TRAVAUX EFFECTUES AU B.R.G.M. INFLUENCE DE LA FISSURATION DES MINERAIS SUR LEUR APTITUDE AU BROYAGE.HUYET G; PREVOSTEAU JM; GATEAU C et al.1976; DGRST-7471153; FR.; DA. 1976; PP. (130P.); H.T. 163; (RAPP. FINAL, COMITE: VALORISATION RESSOUR. SOUS-SOL). 5 FASCReport

Dynamics of self-pulsing semiconductor lasers with optical feedbackCARROLL, O; TANGUY, Y; HOULIHAN, J et al.Optics communications. 2004, Vol 239, Num 4-6, pp 429-436, issn 0030-4018, 8 p.Article

Dynamics of a semiconductor laser with incoherent optical feedbackHOULIHAN, J; HUYET, G; MCINERNEY, J. G et al.Optics communications. 2001, Vol 199, Num 1-4, pp 175-179, issn 0030-4018Article

Filamentation in broad area quantum dot semiconductor lasersSAILLIOT, C; VOIGNIER, V; HUYET, G et al.Optics communications. 2002, Vol 212, Num 4-6, pp 353-357, issn 0030-4018, 5 p.Article

Feedback induced polarisation switching in vertical cavity surface emitting lasersHOULIHAN, J; LEWIS, L; HUYET, G et al.Optics communications. 2004, Vol 232, Num 1-6, pp 391-397, issn 0030-4018, 7 p.Article

Dynamics of annular lasersHUYET, G; MATHIS, C; TREDICCE, J. R et al.Optics communications. 1996, Vol 127, Num 4-6, pp 257-262, issn 0030-4018Article

40 GHz GaInNAs-based passively mode-locked laser diodeHARING, K; THOMA, J; OCHALSKI, T. J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7720, issn 0277-786X, isbn 0-8194-8193-9 978-0-8194-8193-1, 1Vol, 772017.1-772017.7Conference Paper

Optical linewidth of a passively mode-locked semiconductor laserHABRUSEVA, T; O'DONOGHUE, S; REBROVA, N et al.Optics letters. 2009, Vol 34, Num 21, pp 3307-3309, issn 0146-9592, 3 p.Article

Coupling of large aperture semiconductor lasers by gain profilingO'NEILL, E; VOIGNIER, V; WU, G. H et al.Optics communications. 2003, Vol 220, Num 4-6, pp 419-423, issn 0030-4018, 5 p.Article

A low-dimensional dynamical system to describe low-frequency fluctuations in a semiconductor laser with optical feedbackHUYET, G; PORTA, P. A; HEGARTY, S. P et al.Optics communications. 2000, Vol 180, Num 4-6, pp 339-344, issn 0030-4018Article

High Frequency fluctuations in semiconductor lasers with optical feedbackHUYET, G; HEGARTY, S; MCINERNEY, J. G et al.SPIE proceedings series. 1998, pp 580-588, isbn 0-8194-2722-5, 2VolConference Paper

Band Alignment Tailoring of InAs1-xSbx/GaAs Quantum Dots: Control of Type I to Type II TransitionHE, J; REYNER, C. J; MAZUR, Yu. I et al.Nano letters (Print). 2010, Vol 10, Num 8, pp 3052-3056, issn 1530-6984, 5 p.Article

Optically injected quantum-dot lasersERNEUX, T; VIKTOROV, E. A; KELLEHER, B et al.Optics letters. 2010, Vol 35, Num 7, pp 937-939, issn 0146-9592, 3 p.Article

Excitable phase slips in an injection-locked single-mode quantum-dot laserKELLEHER, B; GOULDING, D; KOETH, J et al.Optics letters. 2009, Vol 34, Num 4, pp 440-442, issn 0146-9592, 3 p.Article

Mode formation in broad area quantum dot lasers at 1060 nmTANGUY, Y; MUSZALSKI, J; HOULIHAN, J et al.Optics communications. 2004, Vol 235, Num 4-6, pp 387-393, issn 0030-4018, 7 p.Article

Coherence properties of two trapped particlesFRANKE-ARNOLD, S; BARNETT, S. M; HUYET, G et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2003, Vol 22, Num 3, pp 373-383, issn 1434-6060, 11 p.Article

Phasor plots in optical injection experimentsKELLEHER, B; GOULDING, D; PASCUAL, B. Baselga et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2010, Vol 58, Num 2, pp 175-179, issn 1434-6060, 5 p.Article

Interconnection between ground state and excited state gain in InAs/GaAs quantum dot semiconductor optical amplifiersCROWLEY, M. T; ANDREEV, A. D; PIWONSKI, T et al.Physica status solidi. B. Basic research. 2009, Vol 246, Num 4, pp 868-871, issn 0370-1972, 4 p.Article

Free-carrier effect on index change in 1.3 μm quantum-dot lasersHEGARTY, S. P; CORBETT, B; MCINERNEY, J. G et al.Electronics Letters. 2005, Vol 41, Num 7, pp 416-418, issn 0013-5194, 3 p.Article

Hardy state correlations for two trapped ionsFRANKE, S; HUYET, G; BARNETT, S. M et al.Journal of modern optics (Print). 2000, Vol 47, Num 2-3, pp 145-153, issn 0950-0340Article

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