RUN TEST FOR SINGLE-DIGIT RANDOM NUMBERSICHIMURA M.1980; MATH. JPN.; ISSN 0025-5513; JPN; DA. 1980; VOL. 25; NO 2; PP. 231-237; BIBL. 3 REF.Article

THE EFFECT OF VOIDS ON THE DIFFUSIVITY AND SOLUBILITY OF HYDROGEN IN ALUMINUMICHIMURA M; IMABAYASHI M.1980; NIPPON KINZOKU GAKKAISHI (1952); ISSN 0021-4876; JPN; DA. 1980; VOL. 44; NO 9; PP. 1045-1052; ABS. ENG; BIBL. 20 REF.Article

ETUDE DU VIEILLISSEMENT APRES TREMPE ET DE LA REVERSION DANS DES ALLIAGES FER-CARBONE ET FER-AZOTEYAMAGUCHI H; ICHIMURA M.1972; J. JAP. INST. METALS; JAP.; DA. 1972; VOL. 36; NO 6; PP. 531-538; ABS. ANGL.; BIBL. 4 REF.Serial Issue

ETUDE PAR FROTTEMENT INTERNE DU VIEILLISSEMENT MECANIQUE DANS LES ALLIAGES FER-CARBONE ET FER-AZOTEYAMAGUCHI H; ICHIMURA M.1972; J. JAP. INST. METALS; JAP.; DA. 1972; VOL. 36; NO 6; PP. 539-545; ABS. ANGL.; BIBL. 8 REF.Serial Issue

Stillinger-Weber potentials for III-V compound semiconductors and their application to the critical thickness calculation for InAs/GaAsICHIMURA, M.Physica status solidi. A. Applied research. 1996, Vol 153, Num 2, pp 431-437, issn 0031-8965Article

THE EFFECT OF VOIDS ON THE DIFFUSIVITY AND SOLUBILITY OF HYDROGEN IN ALUMINIUMICHIMURA M; IMABAYASHI M.1980; J. JAP. INST. MET.; JPN; DA. 1980-09; VOL. 44; NO 9; PP. 1045-1052; BIBL. 20 REF.Article

ROLE DU MANGANESE DANS LA TRANSFORMATION PERLITIQUE EN CONDITIONS ISOTHERMESYAMAGUCHI H; ICHIMURA M.1973; J. JAP. INST. METALS; JAP.; DA. 1973; VOL. 37; NO 3; PP. 263-271; ABS. ANGL.; BIBL. 20 REF.Serial Issue

Effects of an ultrathin inserted Si layer on dislocation nucleation in Ge/Si heterostructuresICHIMURA, M.Japanese journal of applied physics. 1996, Vol 35, Num 5B, pp L609-L611, issn 0021-4922, 2Article

THE METABOLISM OF ANALOGS OF ABSCISIC ACID IN CERCOSPORA CRUENTAORITANI T; ICHIMURA M; YAMASHITA K et al.1982; AGRIC. BIOL. CHEM.; JPN; DA. 1982; VOL. 46; NO 7; PP. 1959-1960; BIBL. 8 REF.Article

MEASUREMENT OF THE DIFFUSION COEFFICIENT AND SOLUBILITY OF HYDROGEN IN SOLID ALUMINUMICHIMURA M; IMABAYASHI M; HAYAKAWA M et al.1979; NIPPON KINZOKU GAKKAISHI (1952); ISSN 0021-4876; JPN; DA. 1979; VOL. 43; NO 9; PP. 876-883; ABS. ENG; BIBL. 28 REF.Article

GROSS FEATURE OF HEAVY ION REACTIONS. TRANSFERRED ANGULAR MOMENTUM AND Q-VALUE DEPENDENCESNAGATANI K; ICHIMURA M; ARIMA A et al.1972; PHYS. SCRIPTA; SUEDE; DA. 1972; VOL. 6; NO 5-6; PP. 289-295; BIBL. 26 REF.Serial Issue

EFFECTS OF CHEMICAL CONSTITUENTS IN POLLEN ON THE PROCESS OF HONEY FORMATION = EFFET DES CONSTITUANTS CHIMIQUES DU POLLEN SUR LES PROCESSUS DE FORMATION DU MIELECHIGO T; TAKENAKA T; ICHIMURA M et al.1973; BULL. FAC. AGRIC., TAMAGAWA UNIV.; JAP.; DA. 1973; NO 13; PP. 1-9; ABS. JAP.; BIBL. 10 REF.Article

MAGNETIC MOMENTS OF ³H AND ³HE IN THE QUARK MODELICHIMURA M; HYUGA H; BROWN GE et al.1972; CCO-3001-15; U.S.A.; DA. 1972; PP. (36 P.); BIBL. 13 REF.; MICROFICHEReport

RANDOMIZATION OF SEQUENCES OF NUMBERS.MIYATAKE O; SHIMOIDA H; ICHIMURA M et al.1978; MATH. JAP.; JPN; DA. 1978; VOL. 23; NO 1; PP. 151-164; BIBL. 4 REF.Article

MAGNETIC MOMENTS OF ³H AND ³HE IN THE QUARK MODELICHIMURA M; HYUGA H; BROWN GE et al.1972; NUCL. PHYS., A; NETHERL.; DA. 1972; VOL. 196; NO 1; PP. 17-33; BIBL. 13 REF.Serial Issue

Solution hardening due to a nonrandom atom arrangement in III-V ternary alloy semiconductorsICHIMURA, M; SASAKI, A.Japanese journal of applied physics. 1988, Vol 27, Num 2, pp L176-L178, issn 0021-4922, 2Article

Calculation of bond lengths in InGaAsP quaternary alloy semiconductorICHIMURA, M; SASAKI, A.Japanese journal of applied physics. 1987, Vol 26, Num 2, pp 246-251, issn 0021-4922, 1Article

Bonds in III-V quaternary alloy semiconductors of A_1-x^IIIB_x^IIIC_1-y^VD_y^V typeICHIMURA, M; SASAKI, A.Physical review. B, Condensed matter. 1987, Vol 36, Num 18, pp 9694-9702, issn 0163-1829Article

Bond lengths in III-V ternary alloy semiconductorsSASAKI, A; ICHIMURA, M.Japanese journal of applied physics. 1987, Vol 26, Num 12, pp 2061-2066, issn 0021-4922, 1Article

A CONVENIENT SYNTHESIS OF 5-OXOINDOLIZINE DERIVATIVESNAGASAKA T; INOUE H; ICHIMURA M et al.1982; SYNTHESIS (STUTTG.); ISSN 0039-7881; DEU; DA. 1982; NO 10; PP. 848-850; BIBL. 10 REF.Article

ANOMALOUS RESISTIVITY OF OHMICALLY HEATED PLASMA CONFINED IN THE JIPP-IB-STELLARATOR.KAWAHATA K; ICHIMURA M; NODA N et al.1976; FUSION NUCL.; AUSTR.; DA. 1976; VOL. 16; NO 1; PP. 137-139; BIBL. 5 REF.Article

Negative surface energy change associated with step formation caused by misfit dislocation nucleation in semiconductor heterostructuresICHIMURA, M; NARAYAN, J.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1995, Vol 72, Num 2, pp 297-304, issn 0141-8610Article

Hydrogen diffusivity in Al-Si alloy ingots solidified unidirectionallyICHIMURA, M; SASAJIMA, Y.Keikinzoku. 1993, Vol 43, Num 7, pp 385-391, issn 0451-5994Article

Calculation of point defect concentrations in GaAs grown by molecular beam epitaxyICHIMURA, M; WADA, T.Journal of applied physics. 1992, Vol 72, Num 3, pp 1200-1202, issn 0021-8979Article

Bond statistics and their influence on materials properties of III-V quaternary alloys of type (AB)^III(CD)^VICHIMURA, M; SASAKI, A.Journal of electronic materials. 1988, Vol 17, Num 4, pp 305-310, issn 0361-5235Article