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au.\*:("IMAI, Shigeki")

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Band alignment of SiO2/Si structure formed with nitric acid vapor below 500 °CIMAMURA, Kentarou; TAKAHASHI, Masao; IMAI, Shigeki et al.Surface science. 2009, Vol 603, Num 7, pp 968-972, issn 0039-6028, 5 p.Article

Submicrometer Ultralow-Power TFT With 1.8 nm NAOS SiO2/20 nm CVD SiO2 Gate Stack StructureKUBOTA, Yasushi; MATSUMOTO, Taketoshi; IMAI, Shigeki et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 4, pp 1134-1140, issn 0018-9383, 7 p.Article

Formation of atomically smooth SiO2/SiC interfaces at ∼120 °C by use of nitric acid oxidation methodIMAI, Shigeki; FUJIMOTO, Masayuki; ASUHA et al.Surface science. 2006, Vol 600, Num 3, pp 547-550, issn 0039-6028, 4 p.Article

1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS MethodKUBOTA, Yasushi; MATSUMOTO, Taketoshi; TSUJI, Hiroshi et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 2, pp 385-392, issn 0018-9383, 8 p.Article

Nitric acid method for fabrication of gate oxides in TFTMIZUSHIMA, Shigeaki; IMAI, Shigeki; ASUHA et al.Applied surface science. 2008, Vol 254, Num 12, pp 3685-3689, issn 0169-4332, 5 p.Conference Paper

Low temperature fabrication of 5―10 nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) methodFUKAYA, Yousuke; YANASE, Takashi; KUBOTA, Yasushi et al.Applied surface science. 2010, Vol 256, Num 18, pp 5610-5613, issn 0169-4332, 4 p.Conference Paper

Local wet etching of glasses by acidification utilizing electrochemistryTSUJINO, Kazuya; IMAI, Shigeki; LEE, Chia-Lung et al.Journal of micromechanics and microengineering (Print). 2008, Vol 18, Num 11, issn 0960-1317, 115023.1-115023.6Article

Reaction of cyanide ions with copper on Si surfaces and its use for Si cleaningLIU, Yueh-Ling; FUJIWARA, Naozumi; IWASA, Hitoo et al.Surface science. 2006, Vol 600, Num 5, pp 1165-1169, issn 0039-6028, 5 p.Article

Microscopic X-ray imaging system for biomedical applications using synchrotron radiationUMETANI, Keiji; KOBATAKE, Makito; YAMAMOTO, Akira et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 650112.1-650112.7, issn 0277-786X, isbn 978-0-8194-6614-3Conference Paper

Methods of observation and elimination of semiconductor defect statesKOBAYASHI, Hikaru; LIU, Yueh-Ling; YAMASHITA, Yoshiyuki et al.Solar energy. 2006, Vol 80, Num 6, pp 645-652, issn 0038-092X, 8 p.Conference Paper

Three-dimensional trabecular bone architecture of the lumbar spine in bone metastasis from prostate cancer: comparison with degenerative sclerosisTAMADA, Tsutomu; SONE, Teruki; JO, Yoshimasa et al.Skeletal radiology. 2005, Vol 34, Num 3, pp 149-155, issn 0364-2348, 7 p.Article

Prostate Cancer : Relationships between Postbiopsy Hemorrhage and Tumor Detectability at MR DiagnosisTAMADA, Tsutomu; SONE, Teruki; JO, Yoshimasa et al.Radiology. 2008, Vol 248, Num 2, pp 531-539, issn 0033-8419, 9 p.Article

Superselective angiographic embolization for intractable epistaxisFUKUTSUJI, Kenji; NISHIIKE, Suetaka; AIHARA, Teruhito et al.Acta oto-laryngologica. 2008, Vol 128, Num 5, pp 556-560, issn 0001-6489, 5 p.Article

Formation of 10-30 nm SiO2/Si structure with a uniform thickness at ∼120 °C by nitric acid oxidation methodASUHA; IM, Sung-Soon; TANAKA, Masato et al.Surface science. 2006, Vol 600, Num 12, pp 2523-2527, issn 0039-6028, 5 p.Article

Observation and analysis of microcirculation using high-spatial-resolution image detectors and synchrotron radiationUMETANI, Keiji; YAGI, Naoto; KAJIHARA, Yasumasa et al.SPIE proceedings series. 2000, pp 522-533, isbn 0-8194-3594-5Conference Paper

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