Optimizing the Energy Offset between Dye and Hole-Transporting Material in Solid-State Dye-Sensitized Solar CellsWEISSPFENNIG, Christian T; LEE, Michael M; SNAITH, Henry J et al.Journal of physical chemistry. C. 2013, Vol 117, Num 39, pp 19850-19858, issn 1932-7447, 9 p.Article

Ultralow Surface Recombination Velocity in InP Nanowires Probed by Terahertz SpectroscopyJOYCE, Hannah J; WONG-LEUNG, Jennifer; JOHNSTON, Michael B et al.Nano letters (Print). 2012, Vol 12, Num 10, pp 5325-5330, issn 1530-6984, 6 p.Article

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature processJOYCE, Hannah J; QIANG GAO; HOE TAN, H et al.Nano letters (Print). 2007, Vol 7, Num 4, pp 921-926, issn 1530-6984, 6 p.Article

Self-Healing of Fractured GaAs NanowiresYANBO WANG; JOYCE, Hannah J; QIANG GAO et al.Nano letters (Print). 2011, Vol 11, Num 4, pp 1546-1549, issn 1530-6984, 4 p.Article

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowiresTHANG BA HOANG; TITOVA, Lyubov V; YARRISON-RICE, Jan M et al.Nano letters (Print). 2007, Vol 7, Num 3, pp 588-595, issn 1530-6984, 8 p.Article

Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth ParametersJOYCE, Hannah J; WONG-LEUNG, Jennifer; QIANG GAO et al.Nano letters (Print). 2010, Vol 10, Num 3, pp 908-915, issn 1530-6984, 8 p.Article

Electron Mobilities Approaching Bulk Limits in Surface-Free GaAs NanowiresJOYCE, Hannah J; PARKINSON, Patrick; NIAN JIANG et al.Nano letters (Print). 2014, Vol 14, Num 10, pp 5989-5994, issn 1530-6984, 6 p.Article

Growth of Straight InAs-on-GaAs Nanowire HeterostructuresMESSING, Maria E; WONG-LEUNG, Jennifer; ZANOLLI, Zeila et al.Nano letters (Print). 2011, Vol 11, Num 9, pp 3899-3905, issn 1530-6984, 7 p.Article

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowiresTITOVA, Lyubov V; THANG BA HOANG; JIN ZOU et al.Nano letters (Print). 2007, Vol 7, Num 11, pp 3383-3387, issn 1530-6984, 5 p.Article

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowiresKIM, Yong; JOYCE, Hannah J; QIANG GAO et al.Nano letters (Print). 2006, Vol 6, Num 4, pp 599-604, issn 1530-6984, 6 p.Article

Understanding the True Shape of Au-Catalyzed GaAs NanowiresNIAN JIANG; WONG-LEUNG, Jennifer; JOYCE, Hannah J et al.Nano letters (Print). 2014, Vol 14, Num 10, pp 5865-5872, issn 1530-6984, 8 p.Article

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy : TERAHERTZ NANOTECHNOLOGYJOYCE, Hannah J; DOCHERTY, Callum J; QIANG GAO et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 21, issn 0957-4484, 214006.1-214006.7Article

Noncontact Measurement of Charge Carrier Lifetime and Mobility in GaN NanowiresPARKINSON, Patrick; DODSON, Christopher; JOYCE, Hannah J et al.Nano letters (Print). 2012, Vol 12, Num 9, pp 4600-4604, issn 1530-6984, 5 p.Article

Taper-Free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature ProcessJUNG HYUK KIM; SO RA MOON; HOE TAN, H et al.Crystal growth & design. 2012, Vol 12, Num 1, pp 135-141, issn 1528-7483, 7 p.Article

Unexpected Benefits of Rapid Growth Rate for III-V NanowiresJOYCE, Hannah J; QIANG GAO; YARRISON-RICE, Jan M et al.Nano letters (Print). 2009, Vol 9, Num 2, pp 695-701, issn 1530-6984, 7 p.Article

Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire TransistorsCARRAD, Damon J; BURKE, Adam M; LYTTLETON, Roman W et al.Nano letters (Print). 2014, Vol 14, Num 1, pp 94-100, issn 1530-6984, 7 p.Article

Direct Observation of Charge-Carrier Heating at WZ―ZB InP Nanowire HeterojunctionsCHAW KEONG YONG; WONG-LEUNG, Jennifer; JOYCE, Hannah J et al.Nano letters (Print). 2013, Vol 13, Num 9, pp 4280-4287, issn 1530-6984, 8 p.Article

Phase Separation Induced by Au Catalysts in Ternary InGaAs NanowiresGUO, Ya-Nan; XU, Hong-Yi; WEI LU et al.Nano letters (Print). 2013, Vol 13, Num 2, pp 643-650, issn 1530-6984, 8 p.Article

Strong Carrier Lifetime Enhancement in GaAs Nanowires Coated with Semiconducting PolymerCHAW KEONG YONG; NOORI, Keian; QIANG GAO et al.Nano letters (Print). 2012, Vol 12, Num 12, pp 6293-6301, issn 1530-6984, 9 p.Article

Defect-Free GaAs/AIGaAs Core―Shell Nanowires on Si SubstratesKANG, Jung-Hyun; QIANG GAO; SMITH, Leigh M et al.Crystal growth & design. 2011, Vol 11, Num 7, pp 3109-3114, issn 1528-7483, 6 p.Article

Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz SpectroscopyPARKINSON, Patrick; JOYCE, Hannah J; QIANG GAO et al.Nano letters (Print). 2009, Vol 9, Num 9, pp 3349-3353, issn 1530-6984, 5 p.Article