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The status quo and prospect of Josephson junction device technologyKAWABE, U.FGCS. Future generations computer systems. 1991, Vol 7, Num 2-3, pp 275-282, issn 0167-739XArticle

A-15-TYPE NB-SI THIN FILMS PREPARED BY CO-EVAPORATION AND THEIR ATOMIC ORDERING PROCESSES = COUCHES MINCES NB-SI DE TYPE A-15 PREPAREES PAR COEVAPORATION ET LEURS PROCESSUS DE MISE EN ORDRE ATOMIQUETARUTANI Y; KAWABE U.1980; J. LOW TEMP. PHYS.; ISSN 0022-2291; USA; DA. 1980; VOL. 41; NO 5-6; PP. 553-561; BIBL. 18 REF.Article

NB₃IN AND MO₃ SN THIN FILMS WITH A-15 TYPE STRUCTURE.TARUTANI Y; KAWABE U.1978; MATER. RES. BULL.; U.S.A.; DA. 1978; VOL. 13; NO 5; PP. 469-472; BIBL. 9 REF.Article

SIMPLE MODEL FOR WORK-FUNCTION CHANGES DUE TO ADSORPTION BY METALS.YAMAUCHI H; KAWABE U.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 6; PP. 2687-2691; BIBL. 14 REF.Article

STUDY ON TITANIUM CARBIDE FIELD EMITTERS BY FIELD-ION MICROSCOPY, FIELD-ELECTRON EMISSION MICROSCOPY, AUGER ELECTRON SPECTROSCOPY, AND ATOM-PROBE FIELD ION MICROSCOPYFUTAMOTO M; YUITO I; KAWABE U et al.1982; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1982; VOL. 120; NO 1; PP. 90-102; BIBL. 16 REF.Article

CROISSANCE DE TRIDRITES HFC PAR DEPOT CHIMIQUE EN PHASE VAPEURYUITOU I; FUTAMOTO M; KAWABE U et al.1982; NIPPON KINZOKU GAKKAISHI (1952). (JOURNAL OF THE JAPAN INSTITUTE OF METALS); ISSN 0021-4876; JPN; DA. 1982; VOL. 46; NO 8; PP. 737-742; ABS. ENG; BIBL. 13 REF.Article

THERMIONIC EMISSION PROPERTIES OF HEXABORIDESFUTAMOTO M; NAKAZAWA M; KAWABE U et al.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 100; NO 3; PP. 470-480; BIBL. 22 REF.Article

HAFNIUM CARBIDE AND NITRIDE WHISKER GROWTH BY CHEMICAL VAPOR DEPOSITIONFUTAMOTO M; YUITO I; KAWABE U et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 1; PP. 69-74; BIBL. 16 REF.Article

WACHSTUM VON HFC-WHISKERN MITTELS DER CHEMISCHEN BEDAMPFUNGYUITOU I; FUTAMOTO M; KAWABE U et al.1982; J. JAP. INST. MET.; JPN; DA. 1982-08; VOL. 46; NO 8; PP. 737-742; BIBL. 13 REF.Article

MICROHARDNESS OF HEXABORIDE SINGLE CRYSTALSFUTAMOTO M; AITA T; KAWABE U et al.1979; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1979; VOL. 14; NO 10; PP. 1329-1334; BIBL. 7 REF.Article

CRYSTALLOGRAPHIC PROPERTIES OF LAB₆ FORMED IN MOLTEN ALUMINIUM.FUTAMOTO M; AITA T; KAWABE U et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 9; PP. 1263-1266; BIBL. 6 REF.Article

SUPERCONDUCTING TUNNELING JUNCTIONS OF V₃SI-SIO_X-MO₃RE₂TARUTANI Y; YAMADA K; KAWABE U et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 239-240; BIBL. 8 REF.Article

THERMIONIC EMISSION PROPERTIES OF A SINGLE-CRYSTAL LAB₆ CATHODEFUTAMOTO M; NAKAZAWA M; USAMI K et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3869-3876; BIBL. 26 REF.Article

WORK FUNCTION OF LAB₆.YAMAUCHI H; TAKAGI K; YUITO I et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 10; PP. 638-640; BIBL. 19 REF.Article

PREPARATION, VAPOR PRESSURE, AND THERMIONIC EMISSION PROPERTIES OF BAB₆ POWDERAIDA T; HONDA Y; YAMAMOTO S et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 1022-1029; BIBL. 32 REF.Article

FIELD-EMISSION AND FIELD-ION MICROSCOPY OF LANTHANUM HEXABORIDE.FUTAMOTO M; HOSOKI S; OKANO H et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 8; PP. 3541-3546; BIBL. 11 REF.Article

PREPARATION DES POUDRES DE BAB₆ ET CARACTERISTIQUES D'EMISSION THERMOIONIQUEAIDA T; HONDA Y; YAMAMOTO S et al.1979; NIPPON KINZOKU GAKKAISHI (1952); ISSN 0021-4876; JPN; DA. 1979; VOL. 43; NO 10; PP. 901-907; BIBL. 18 REF.Article

PROPRIETES D'EMISSION ELECTRONIQUE PAR EFFET DE CHAMP DES HEXABORURES DE TERRES RARESOKANO H; FUTAMOTO M; HOSOKI S et al.1977; J. VACUUM SOC. JAP.; JAP.; DA. 1977; VOL. 20; NO 4; PP. 127-135; ABS. ANGL.; BIBL. 4 REF.Article

SURFACE COMPOSITIONS OF HEXABORIDES AT HIGH TEMPERATURESNAKAZAWA M; FUTAMOTO M; USAMI K et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6917-6920; BIBL. 19 REF.Article

DC-SQUID using high-critical-temperature oxide superconductorsNAKANE, H; NISHINO, T; HIRANO, M et al.Japanese journal of applied physics. 1987, Vol 26, Num 10, pp L1581-L1582, issn 0021-4922, 2Article

Three-terminal superconducting device using a Si single-crystal filmNISHINO, T; MIYAKE, M; HARADA, Y et al.IEEE electron device letters. 1985, Vol 6, Num 6, pp 297-299, issn 0741-3106Article

The field-effect superconducting transistorNISHINO, T; YAGI, K; KAWABE, U et al.Hitachi review. 1990, Vol 39, Num 1, pp 35-40, issn 0018-277XArticle

Ultrahigh speed direct coupled logic gate fabricated with NbN/Pb Josephson junctions = Porte logique en nitrure de niobium à jonctions JosephsonHATANO, Y; NISHINO, T; TARUTANI, Y et al.Applied physics letters. 1984, Vol 44, Num 11, pp 1095-1097, issn 0003-6951Article

Niobium-based integrated circuit technologiesTARUTANI, Y; HIRANO, M; KAWABE, U et al.Proceedings of the IEEE. 1989, Vol 77, Num 8, pp 1164-1174, issn 0018-9219Article