A 31.3-dBm bulk CMOS T/R switch using stacked transistors with sub-design-rule channel length in floated p-wellsHAIFENG XU; KENNETH, K. O.IEEE journal of solid-state circuits. 2007, Vol 42, Num 11, pp 2528-2534, issn 0018-9200, 7 p.Article

Technique for Integration of a Wireless Switch in a 2.4 GHz Single Chip RadioLERDSITSOMBOON, Wuttichai; KENNETH, K. O.IEEE journal of solid-state circuits. 2011, Vol 46, Num 2, pp 368-377, issn 0018-9200, 10 p.Article

High-Q Thick-Gate-Oxide MOS Varactors With Subdesign-Rule Channel Lengths for Millimeter-Wave ApplicationsHAIFENG XU; KENNETH, K. O.IEEE electron device letters. 2008, Vol 29, Num 4, pp 363-365, issn 0741-3106, 3 p.Article

A technique to improve the drive current of high-voltage I/O transistors in digital CMOS technologiesHAIFENG XU; KENNETH, K. O.IEEE electron device letters. 2005, Vol 26, Num 10, pp 752-754, issn 0741-3106, 3 p.Article

A low-phase-noise and low-power multiband CMOS voltage-controlled oscillatorZHENBIAO LI; KENNETH, K. O.IEEE journal of solid-state circuits. 2005, Vol 40, Num 6, pp 1296-1302, issn 0018-9200, 7 p.Article

Switching noise picked up by a planar dipole antenna mounted near integrated circuitsMEHTA, Jesal; BRAVO, Dan; KENNETH, K. O et al.IEEE transactions on electromagnetic compatibility. 2002, Vol 44, Num 2, pp 282-290, issn 0018-9375Article

Merged Clock Data Recovery and 24-GHz LO Generation Circuit for Crystalless TranscseiverOH, Kyujin; YANPING DING; KENNETH, K. O et al.IEEE transactions on microwave theory and techniques. 2011, Vol 59, Num 7, pp 1832-1839, issn 0018-9480, 8 p.Article

The projected power consumption of a wireless clock distribution system and comparison to conventional distribution systemsFLOYD, B. A; KENNETH, K. O.IEEE 1999 international interconnect technology conference. 1999, pp 248-250, isbn 0-7803-5174-6Conference Paper

21.5-to-33.4 GHz Voltage-Controlled Oscillator Using NMOS Switched Inductors in CMOSJING ZHANG; SHARMA, Navneet; KENNETH, K. O et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 7, pp 478-480, issn 1531-1309, 3 p.Article

A BiCMOS process utilizing selective epitaxy for analog/digital applicationsKENNETH, K. O; HAE-SEUNG LEE; REIF, R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1362-1369, issn 0018-9383, 8 p.Article

Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz PixelHAN, Ruonan; YAMING ZHANG; YOUNGWAN KIM et al.IEEE journal of solid-state circuits. 2013, Vol 48, Num 10, pp 2296-2308, issn 0018-9200, 13 p.Article

150 GHz Complementary Anti-Parallel Diode Frequency Tripler in 130 nm CMOSSHIM, Dongha; CHUYING MAO; SANKARAN, Swaminathan et al.IEEE microwave and wireless components letters. 2011, Vol 21, Num 1, pp 43-45, issn 1531-1309, 3 p.Article

A TV-B and Harmonic Rejection Mixer Adopting a g_m Linearization TechniqueCHA, Choong-Yul; LEE, Heung-Bae; KENNETH, K. O et al.IEEE microwave and wireless components letters. 2009, Vol 19, Num 9, pp 563-565, issn 1531-1309, 3 p.Article

A 2-μm BiCMOS process utilizing selective epitaxyKENNETH, K. O; HAE-SEUNG LEE; REIF, R et al.IEEE electron device letters. 1988, Vol 9, Num 11, pp 567-569, issn 0741-3106Article

A 15-GHz integrated CMOS switch with 21.5-dBm IP_1dB and 1.8-dB insertion lossZHENBIAO LI; KENNETH, K. O.Symposium on VLSI Circuits. 2003, pp 366-367, isbn 0-7803-8287-0, 1Vol, 2 p.Conference Paper

Multi-Level Amplitude Modulation of a 16.8-GHz Class-E Power Amplifier With Negative Resistance Enhanced Power Gain for 400-Mbps Data TransmissionWU, Hsin-Ta; RUONAN HAN; LERDSITSOMBOON, Wuttichai et al.IEEE journal of solid-state circuits. 2010, Vol 45, Num 5, pp 1072-1079, issn 0018-9200, 8 p.Article

125-GHz Diode Frequency Doubler in 0.13-μm CMOSMAO, Chuying; SHASHANK NALLANI, Chakravartula; SANKARAN, Swaminathan et al.IEEE journal of solid-state circuits. 2009, Vol 44, Num 5, pp 1531-1538, issn 0018-9200, 8 p.Article

Generation of Second and Fourth Harmonic Signals Using a Balanced Colpitts Oscillator With a Patch AntennaSEOK, Eunyoung; SHIM, Dongha; ARENAS, Daniel J et al.IEEE microwave and wireless components letters. 2010, Vol 20, Num 10, pp 554-556, issn 1531-1309, 3 p.Article

A shallow buried-layer formation technique utilizing diffusion from implanted polysilicon layerKENNETH, K. O; HAE-SEUNG LEE; REIF, R et al.IEEE electron device letters. 1989, Vol 10, Num 7, pp 319-321, issn 0741-3106Article

Full-Duplex Crystalless CMOS Transceiver With an On-Chip Antenna for Wireless Communication in a Hybrid Engine Controller BoardKYUJIN OH; SANKARAN, Swaminathan; WU, Hsin-Ta et al.IEEE journal of solid-state circuits. 2013, Vol 48, Num 6, pp 1327-1342, issn 0018-9200, 16 p.Article

Millimeter Wave Varistor Mode Schottky Diode Frequency Doubler in CMOSMAO, Chuying; SANKARAN, Swaminathan; SEOK, Eunyoung et al.IEEE microwave and wireless components letters. 2009, Vol 19, Num 3, pp 173-175, issn 1531-1309, 3 p.Article

Power transmission gain measurements of integrated antenna pairs in indoor and outdoor environmentsLIN, Jau-Jr; XIAOLING GUO; RAN LI et al.IEEE antennas and propagation society international symposiumNational radio science meeting. 2004, pp 1611-1614, isbn 0-7803-8302-8, 4Vol, 4 p.Conference Paper