Intervalley mechanism of negative difference conductance of double-heterojunction bipolar transistorsRYZHII, V; KHMYROVA, I.Semiconductor science and technology. 1991, Vol 6, Num 8, pp 771-776, issn 0268-1242, 6 p.Article

Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectorsRYZHII, V; KHMYROVA, I; RYZHII, M et al.Semiconductor science and technology. 2004, Vol 19, Num 1, pp 8-16, issn 0268-1242, 9 p.Article

Resonant-tunneling bipolar transistors with a quantum-well baseRYZHII, V; KHMYROVA, I; RYZHII, M et al.Japanese journal of applied physics. 1996, Vol 35, Num 10, pp 5280-5283, issn 0021-4922, 1Article

Optically controlled plasma resonances in induced-base hot-electron transistorsRYZHII, V; KHMYROVA, I; RYZHII, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 9A, pp 5472-5474, issn 0021-4922, 1Article

Theory of an intersubband infrared phototransistor with a nonuniform quantum wellRYZHII, V; KHMYROVA, I; ERSHOV, M et al.Semiconductor science and technology. 1995, Vol 10, Num 7, pp 997-1001, issn 0268-1242Article

Heterostructure laser-transistors controlled by resonant-tunnelling electron extractionRYZHII, V; WILLANDER, M; RYZHII, M et al.Semiconductor science and technology. 1997, Vol 12, Num 4, pp 431-438, issn 0268-1242Article

Bistability effect in laser-transistor resonant-tunneling structureRYZHII, V; KHMYROVA, I.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1259-1262, issn 0038-1101Conference Paper

Effet de répulsion du courant dans les transistors à hétérojonctions à porteurs chaudsRYZHIJ, V. I; KHMYROVA, I. I.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 7, pp 1277-1282, issn 0015-3222Article

Photon mechanism of image smearing in integrated QWIP-LED pixelless devicesRYZHII, V; KHMYROVA, I; BOIS, P et al.IEEE journal of quantum electronics. 1999, Vol 35, Num 11, pp 1693-1696, issn 0018-9197Article

High-frequency response of intersubband infrared photodetectors with a multiple quantum well structureRYZHII, V; KHMYROVA, I; RYZHI, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2596-2600, issn 0021-4922, 1Article

Optimisation of bistable quantum well IR phototransistorsRYZHII, V; KHMYROVA, I; RYZHII, M et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 5, pp 283-286, issn 1350-2433Article

Finite element analysis of self-positioning microstructures and nanostructuresNIKISHKOV, G. P; KHMYROVA, I; RYZHII, V et al.Nanotechnology (Bristol. Print). 2003, Vol 14, Num 7, pp 820-823, issn 0957-4484, 4 p.Article

Quantum well infrared photodetectorf with optical outputRYZHII, V; ERSHOV, M; RYZHII, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 1A, pp L38-L40, issn 0021-4922, 2Article

Multivalued current-voltage characteristics of bipolar heterojunction with a tunnel-resonant emitterRYZHII, V. I; KHMYROVA, I. I; TYBULEWICZ, A et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 4, pp 387-390, issn 0038-5700Article

Device model for quantum dot infrared photodetectors and their dark-current characteristicsRYZHII, V; KHMYROVA, I; PIPA, V et al.Semiconductor science and technology. 2001, Vol 16, Num 5, pp 331-338, issn 0268-1242Article

Particularités des propriétés à haute fréquence des transistors à hétérojonction bipolaires balistiquesRYZHIJ, V. I; FEDIRKO, V. A; KHMYROVA, I. I et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 845-849, issn 0015-3222Article

Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistorsSATOU, A; KHMYROVA, I; RYZHII, V et al.Semiconductor science and technology. 2003, Vol 18, Num 6, pp 460-469, issn 0268-1242, 10 p.Article

A quasi three-dimensional model for plasma resonances in hot electron transistorsKHMYROVA, I; RYZHII, V.Microelectronic engineering. 1999, Vol 47, Num 1-4, pp 349-351, issn 0167-9317Conference Paper

Theoretical study of an infrared-to-visible wavelength quantum-well converterRYZHII, V; KHMYROVA, I; ERSHOV, M et al.Semiconductor science and technology. 1995, Vol 10, Num 9, pp 1272-1276, issn 0268-1242Article

Analysis of integrated quantum-well infrared photodetector and light-emitting diode for implementing pixelless imaging devicesRYZHII, V; LIU, H. C; KHMYROVA, I et al.IEEE journal of quantum electronics. 1997, Vol 33, Num 9, pp 1527-1531, issn 0018-9197Article

Comparison studies of infrared phototransistors with a quantum-well and a quantum-wire baseRYZHII, V; KHMYROVA, I; RYZHII, M et al.Journal de physique. IV. 1996, Vol 6, Num 3, pp C3.157-C3.161, issn 1155-4339Conference Paper

Device model for three-terminal lateral p-n junction quantum well lasersRYZHII, V; SATOU, A; KHMYROVA, I et al.SPIE proceedings series. 2003, pp 132-141, isbn 0-8194-4786-2, 10 p.Conference Paper