au.\*:("KIKUCHIHARA, Hideyuki")
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The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONSJÜRGEN MATTAUSCH, Hans; MIYAKE, Masataka; IIZUKA, Takahiro et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 653-661, issn 0018-9383, 9 p.Article
HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET CircuitsORITSUKI, Yasunori; YOKOMICHI, Masahiro; MIURA-MATTAUSCH, Mitiko et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2671-2678, issn 0018-9383, 8 p.Article
Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS DevicesTANAKA, Akihiro; ORITSUKI, Yasunori; KIKUCHIHARA, Hideyuki et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 7, pp 2072-2080, issn 0018-9383, 9 p.Article
Modeling of Trench-Gate Type HV-MOSFETs for Circuit SimulationIIZUKA, Takahiro; FUKUSHIMA, Kenji; TANAKA, Akihiro et al.IEICE transactions on electronics. 2013, Vol 96, Num 5, pp 744-751, issn 0916-8524, 8 p.Article
Compact Modeling of Expansion Effects in LDMOSHZUKA, Takahiro; SAKUDA, Takashi; ORITSUKI, Yasunori et al.IEICE transactions on electronics. 2012, Vol 95, Num 11, pp 1817-1823, issn 0916-8524, 7 p.Article
Modeling of the Impurity-Gradient Effect in High-Voltage Laterally Diffused MOSFETs : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONSIIZUKA, Takahiro; FUKUSHIMA, Kenji; TANAKA, Akihiro et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 684-690, issn 0018-9383, 7 p.Article