THE INFLUENCE OF STRUCTURAL DEFECTS AND CONCENTRATION INHOMOGENEITIES IN EPITAXIAL GALLIUM ARSENIDE ON THE ELECTRICAL CHARACTERISTICS OF IMPACT IONIZATION AVALANCHE TRANSIT TIME DIODESKONAKOVA RV; SHVARTS YU M.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 3; PP. 203-206; BIBL. 12 REF.Article

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NEGATIVE RESISTANCE AND CURRENT FILAMENT IN AVALANCHE DIODESFINEBERG VI; KONAKOVA RV; SHCHERBINA LV et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 1; PP. 39-43; ABS. GER; BIBL. 30 REF.Article

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STUDY OF MICROPLASMA BREAKDOWN IN SCHOTTKY BARRIER DIODES BY MEANS OF A MODULATION METHODZAITSEVSKU IL; KONAKOVA RV; SHAKHOVTSOV VI et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 4; PP. 401-403; BIBL. 4 REF.Article

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EFFET DES TENSIONS MECANIQUES SUR LES PARAMETRES ELECTRIQUES DES HETERODIODES DE TRANSIT A AVALANCHEKONAKOVA RV; MATVEEVA LA; SOLDATENKO NN et al.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 4; PP. 346-350; BIBL. 6 REF.Article

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EFFET DE LA STRUCTURE DES DEFAUTS SUR LE DEVELOPPEMENT DU CLAQUAGE A AVALANCHE DANS LES HETERODIODES GE-GAAS ET LES DIODES A BARRIERE DE SCHOTTKY CR-GAASKONAKOVA RV; MEL'NIKOV GD; TKHORIK YU A et al.1978; POLUPROVODN. TEKH. MIKROELEKTRON.; UKR; DA. 1978; NO 28; PP. 67-69; BIBL. 4 REF.Article

EFFETS DU RAYONNEMENT DANS LA REGION VOISINE DE LA LIMITE DU PHOSPHURE DE GALLIUMBORKOVSKAYA O YU; DMITRUK NL; KONAKOVA RV et al.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 6; PP. 1194-1199; BIBL. 21 REF.Article

INFLUENCE OF LOW-TEMPERATURE THERMOTREATMENT ON THE CHARACTERISTICS OF CR-GAAS AND AU-CR-GAAS SCHOTTKY DIODESBORKOVSKAYA O YU; DMITRUK NL; KONAKOVA RV et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 22; PP. 700-701; BIBL. 5 REF.Article

INFLUENCE OF INTERFACIAL STRUCTURAL DEFECTS ON THE DEVELOPMENT OF AVALANCHE BREAKDOWN IN HETEROJUNCTIONSVASILEVSKAYA VN; KONAKOVA RV; MELNIKOV GD et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 55; NO 2; PP. 289-291; BIBL. 7 REF.Article

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AVALANCHE BREAKDOWN PECULARITIES OF AL_XGA_1-X AS IMPATT DIODESKONAKOVA RV; TKHORIK YU A; ZAITSEVSKII IL et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 63; NO 2; PP. K163-K166; BIBL. 6 REF.Article

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INFLUENCE DE L'IRRADIATION GAMMA SUR LES CARACTERISTIQUES V-A DES HETEROJONCTIONS GE-GAAS ET DES DIODES A BARRIERE DE SCHOTTKY AU-CR-GAASKONAKOVA RV; SEMENOVA GN; TYURIK YU A et al.1979; UKR. FIZ. Z. (KIEV, 1967); ISSN 0503-1265; UKR; DA. 1979; VOL. 24; NO 9; PP. 1308-1312; ABS. ENG; BIBL. 11 REF.Article

THE STRUCTURE AND ELECTRICAL CHARACTERISTICS OF SI/GE HETEROJUNCTIONS. I: IMPERFECTIONS IN THE SI-GE HETEROEPITAXIAL SYSTEM OBTAINED BY DEPOSITION OF GERMANIUM FROM A MOLECULAR BEAMVASILEVSKAYA VN; KONAKOVA RV; OSADCHAYA NV et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 55; NO 2; PP. 229-234; BIBL. 17 REF.Article

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