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Self-biased saturable absorber mirror demonstrating very low saturation fluenceGADJIEV, I. M; RYVKIN, B. S; AVRUTIN, E. A et al.Electronics letters. 2010, Vol 46, Num 1, pp 74-75, issn 0013-5194, 2 p.Article

Distortion-free optical amplification of 20-80 GHz modelocked laser pulses at 1.3 μm using quantum dotsLAEMMLIN, M; FIOL, G; MEUER, C et al.Electronics Letters. 2006, Vol 42, Num 12, pp 697-699, issn 0013-5194, 3 p.Article

Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloysMINTAIROV, A. M; BLAGNOV, P. A; MERZ, J. L et al.SPIE proceedings series. 2003, pp 157-160, isbn 0-8194-4824-9, 4 p.Conference Paper

InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength rangeMALEEV, N. A; KRESTNIKOV, I. L; TSATSULNIKOV, A. F et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 803-806, issn 0370-1972Conference Paper

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A thermodynamic analysis of the growth of III-V compounds with two volatile group V elements by molecular-beam epitaxyEGOROV, A. Yu; KOVSH, A. R; USTINOV, V. M et al.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 69-74, issn 0022-0248Conference Paper

Low-threshold injection lasers based on vertically coupled quantum dotsUSTINOV, V. M; EGOROV, A. YU; KOP'EV, P. S et al.Journal of crystal growth. 1997, Vol 175-76, pp 689-695, issn 0022-0248, 2Conference Paper

Quantum dot lasers with controllable spectral and modal characteristicsZHUKOV, A. E; MAXIMOV, M. V; GORDEEV, N. Yu et al.Semiconductor science and technology. 2011, Vol 26, Num 1, issn 0268-1242, 014004.1-014004.7Article

High-power quantum-dot-based semiconductor disk laserBUTKUS, M; WILCOX, K. G; RAFAILOV, E. U et al.Optics letters. 2009, Vol 34, Num 11, pp 1672-1674, issn 0146-9592, 3 p.Article

A high-power 975 nm tilted cavity laser with a 0.13 nm K-1 thermal shift of the lasing wavelengthSHCHUKIN, V. A; LEDENTSOV, N. N; KRESTNIKOV, I. L et al.Semiconductor science and technology. 2007, Vol 22, Num 9, pp 1061-1065, issn 0268-1242, 5 p.Article

High speed nanophotonic devices based on quantum dotsBIMBERG, D; FIOL, G; KUNTZ, M et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 14, pp 3523-3532, issn 1862-6300, 10 p.Article

Quantum dot semiconductor lasers with optical feedbackHUYET, G; O'BRIEN, D; KOVSH, A. R et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 345-352, issn 0031-8965, 8 p.Conference Paper

Formation specifity of InAs/GaAs submonolayer superlatticeSOSHNIKOV, I. P; VOLOVIK, B. V; GERTHSEN, D et al.SPIE proceedings series. 2003, pp 60-62, isbn 0-8194-4824-9, 3 p.Conference Paper

1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxyUSTINOV, V. M; ZHUKOV, A. E; LEDENTSOV, N. N et al.Journal of crystal growth. 2001, Vol 227-28, pp 1155-1161, issn 0022-0248Conference Paper

Dynamical redistribution of mean electron spin over the energy spectrum of quantum dotsKALEVICH, V. K; PAILLARD, M; KAVOKIN, K. V et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 2, pp 567-571, issn 0370-1972Conference Paper

A superlattice detector as a fast direct detector and autocorrelator for terahertz radiationWINNERL, S; SCHOMBURG, E; LEDENTSOV, N. N et al.SPIE proceedings series. 1999, pp 116-125, isbn 0-8194-3281-4Conference Paper

Modelocked quantum dot vertical external cavity surface emitting laserHOFFMANN, M; BARBARIN, Y; MAAS, D. J. H. C et al.Applied physics. B, Lasers and optics (Print). 2008, Vol 93, Num 4, pp 733-736, issn 0946-2171, 4 p.Article

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emittersLEDENTSOV, N. N; HOPFER, F; MIKHRIN, S. S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64681O.1-64681O.15, issn 0277-786X, isbn 978-0-8194-6581-8, 1VolConference Paper

Metamorphic 1.5 μm-range quantum dot lasers on a GaAs substrateYA KARACHINSKY, L; KETTLER, T; USTINOV, V. M et al.Semiconductor science and technology. 2006, Vol 21, Num 5, pp 691-696, issn 0268-1242, 6 p.Article

Single transverse mode 850 nm GaAs/AlGaAs lasers with narrow beam divergenceKETTLER, T; POSILOVIC, K; SHARON, A et al.Electronics Letters. 2006, Vol 42, Num 20, pp 1157-1159, issn 0013-5194, 3 p.Article

Absorber length optimisation for sub-picosecond pulse generation in passively mode-locked 1.3μm Quantum-Dot Laser DiodesRAE, A. R; THOMPSON, M. G; PENTY, R. V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61841F.1-61841F.8, issn 0277-786X, isbn 0-8194-6240-3, 1VolConference Paper

High-power singlemode CW operation of 1.5 μm-range quantum dot GaAs-based laserKARACHINSKY, L. Ya; KETTLER, T; USTINOV, V. M et al.Electronics Letters. 2005, Vol 41, Num 8, pp 478-480, issn 0013-5194, 3 p.Article

QD lasers : Physics and applicationsLEDENTSOV, N. N; KOVSH, A. R; SOSHNIKOV, I. P et al.SPIE proceedings series. 2005, pp 335-344, isbn 0-8194-5578-4, 10 p.Conference Paper

MBE growth of low-threshold long-wavelength QD lasers on GaAs substratesMALEEV, N. A; KOVSH, A. R; SOSHNIKOV, I. P et al.SPIE proceedings series. 2003, pp 357-360, isbn 0-8194-4824-9, 4 p.Conference Paper