GaN-based optoelectronics on silicon substratesKROST, Alois; DADGAR, Armin.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 93, Num 1-3, pp 77-84, issn 0921-5107Article

Fast, micrometer scale characterization of group-III nitrides with laboratory X-ray diffraction : Probing strains and dislocation gradients with diffractionKROST, Alois; BLÄSING, Jürgen.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2009, Vol 524, Num 1-2, pp 82-88, issn 0921-5093, 7 p.Article

ICMOVPE-XI: Proceedings of the Eleventh International Conference on Metalorganic Vapor Phase Epitaxy, Berlin, Germany, 3-7 June 2002KROST, Alois; MULLIN, J. Brian; WEYERS, Markus et al.Journal of crystal growth. 2003, Vol 248, issn 0022-0248, 612 p.Conference Proceedings

MOVPE growth of GaN on SiDADGAR, Armin; KROST, Alois.Vacuum science and technology : nitrides as seen by the technology 2002. 2002, pp 197-241, isbn 81-7736-198-8, 45 p.Book Chapter

Exact determination of indium incorporation in (In_xGa_1-xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical propertiesSCHULZE, Fabian; BLÄSING, Jürgen; DADGAR, Armin et al.Zeitschrift für Kristallographie. 2004, Vol 219, Num 4, pp 191-194, issn 0044-2968, 4 p.Article

Oxygen doping of AlGaAs in MOVPE using triethoxyarsineFUJITA, Yasuhisa.Journal of crystal growth. 2003, Vol 248, pp 144-148, issn 0022-0248, 5 p.Conference Paper

Characterization of AlGalnN layers using X-ray diffraction and fluorescence : Polarization-Field Control in Nitride Light EmittersGROH, Lars; HUMS, Christoph; BLÄSING, Jürgen et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 3, pp 622-626, issn 0370-1972, 5 p.Article

High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers : Structure analysis of thim films and NanostructuresDEITER, Steffi; WITEK, Helvi; OLEYNIK, Nikolay et al.Zeitschrift für Kristallographie. 2004, Vol 219, Num 4, pp 187-190, issn 0044-2968, 4 p.Article

Impact of ^AIN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon : Polarization-Field Control in Nitride Light EmittersRAVASH, Roghaiyeh; BLAESING, Juergen; HEMPEL, Thomas et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 3, pp 594-599, issn 0370-1972, 6 p.Article

CHALLENGES & OPPORTUNITIES IN GaN AND ZnO DEVICES & MATERIALSMORKOC, Hadis; CHYI, Jen-Inn; KROST, Alois et al.Proceedings of the IEEE. 2010, Vol 98, Num 7, issn 0018-9219, 228 p.Serial Issue

Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniquesKRTSCHIL, A; DADGAR, A; KROST, A et al.Journal of crystal growth. 2003, Vol 248, pp 542-547, issn 0022-0248, 6 p.Conference Paper

Advances in the modeling of MOVPE processesKARPOV, S. Yu.Journal of crystal growth. 2003, Vol 248, pp 1-7, issn 0022-0248, 7 p.Conference Paper

Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometryBALMER, R. S; MARTIN, T.Journal of crystal growth. 2003, Vol 248, pp 216-221, issn 0022-0248, 6 p.Conference Paper

Structure and energetics of nitride surfaces under MOCVD growth conditionsVAN DE WALLE, Chris G; NEUGEBAUER, J.Journal of crystal growth. 2003, Vol 248, pp 8-13, issn 0022-0248, 6 p.Conference Paper

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality Al_xGa_1―xN on Si (111)SAENGKAEW, Phannee; DADGAR, Armin; BLAESING, Juergen et al.Journal of crystal growth. 2009, Vol 311, Num 14, pp 3742-3748, issn 0022-0248, 7 p.Article

Transient thermal characterization of AlGaN/GaN HEMTs grown on siliconKUZMIK, Jan; BYCHIKHIN, Sergey; NEUBURGER, M et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 8, pp 1698-1705, issn 0018-9383, 8 p.Article

High growth enhancement factor in arrayed waveguide by MOVPE selective area growthMORIGUCHI, Yusuke; KIHARA, Tatsuya; SHIMOMURA, Kazuhiko et al.Journal of crystal growth. 2003, Vol 248, pp 395-399, issn 0022-0248, 5 p.Conference Paper

MOVPE growth of B_xGa_1-xAs, B_xGa_1-x-yIn_yAs, and B_xAl_1-xAs alloys on (0 0 1) GaAsGOTTSCHALCH, V; LEIBIGER, G; BENNDORF, G et al.Journal of crystal growth. 2003, Vol 248, pp 468-473, issn 0022-0248, 6 p.Conference Paper

Metalorganic chemical vapor deposition of group III nitrides: a discussion of critical issuesKELLER, Stacia; DENBAARS, Steven P.Journal of crystal growth. 2003, Vol 248, pp 479-486, issn 0022-0248, 8 p.Conference Paper

A new method for low-powered laser reflectance and scattering monitoring of MOVPE growth with narrow optical accessBÄCKSTRÖM, C; IRVINE, S. J. C; BARRIOZ, V et al.Journal of crystal growth. 2003, Vol 248, pp 222-228, issn 0022-0248, 7 p.Conference Paper

Optical in situ monitoring of MOVPE GaSb(1 0 0) film growthMÖLLER, K; KOLLONITSCH, Z; GIESEN, Ch et al.Journal of crystal growth. 2003, Vol 248, pp 244-248, issn 0022-0248, 5 p.Conference Paper

Growth of Sb-based materials by MOVPEDIMROTH, F; AGERT, C; BETT, A. W et al.Journal of crystal growth. 2003, Vol 248, pp 265-273, issn 0022-0248, 9 p.Conference Paper

Photoluminescence characterisation of unintentional acceptors in MOVPE-grown GaInSbVANKOVA, V; LEITCH, A. W. R; BOTHA, J. R et al.Journal of crystal growth. 2003, Vol 248, pp 279-283, issn 0022-0248, 5 p.Conference Paper

InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopyHAZDRA, P; VOVES, J; OSWALD, J et al.Journal of crystal growth. 2003, Vol 248, pp 328-332, issn 0022-0248, 5 p.Conference Paper

Alloy composition control of InGaAs/InP grown by Cl-assisted MOVPE with tertiarybutylchlorideNANIWAE, Koichi; KURIHARA, Kaori; NISHI, Kenichi et al.Journal of crystal growth. 2003, Vol 248, pp 400-404, issn 0022-0248, 5 p.Conference Paper