Changes in interfacial bonding energies in the chemical activation of GaAs surfacesNING LIU; KUECH, Thomas F.Journal of electronic materials. 2005, Vol 34, Num 7, pp 1010-1015, issn 0361-5235, 6 p.Article

Nanofabrication of III-V semiconductors employing diblock copolymer lithographyKUECH, Thomas F; MAWST, Luke J.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 18, issn 0022-3727, 183001.1-183001.18Article

Surfactant effect of Sb on GaN growthGOKHALE, Amit A; KUECH, Thomas F; MAVRIKAKIS, Manos et al.Journal of crystal growth. 2005, Vol 285, Num 1-2, pp 146-155, issn 0022-0248, 10 p.Article

Chemical Characterization of DNA-Immobilized InAs Surfaces Using X-ray Photoelectron Spectroscopy and Near-Edge X-ray Absorption Fine StructureCHO, Eunkyung; BROWN, April; KUECH, Thomas F et al.Langmuir. 2012, Vol 28, Num 32, pp 11890-11898, issn 0743-7463, 9 p.Article

A theoretical comparative study of the surfactant effect of Sb and Bi on GaN growthGOKHALE, Amit A; KUECH, Thomas F; MAVRIKAKIS, Manos et al.Journal of crystal growth. 2007, Vol 303, Num 2, pp 493-499, issn 0022-0248, 7 p.Article

Growth behavior of GaSb by metal-organic vapor-phase epitaxyRATHI, Manish K; HAWKINS, Brian E; KUECH, Thomas F et al.Journal of crystal growth. 2006, Vol 296, Num 2, pp 117-128, issn 0022-0248, 12 p.Article

Low temperature growth of GaAs_1―yBi_y epitaxial layersFORGHANI, Kamran; ANAND, Amita; MAWST, Luke J et al.Journal of crystal growth. 2013, Vol 380, pp 23-27, issn 0022-0248, 5 p.Article

The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14), 8-13 August 2010, Beijing, ChinaCHEN, Chuangtian; KUECH, Thomas F; NISHINAGA, Tatau et al.Journal of crystal growth. 2011, Vol 318, Num 1, issn 0022-0248, 1203 p.Conference Proceedings

Recent developments in understanding of the metastable zone width of different solute―solvent systemsSANGWAL, K.Journal of crystal growth. 2011, Vol 318, Num 1, pp 103-109, issn 0022-0248, 7 p.Conference Paper

Dissolution kinetics at edge dislocation site of (1 1 1) surface of copper crystalsIMASHIMIZU, Y.Journal of crystal growth. 2011, Vol 318, Num 1, pp 125-130, issn 0022-0248, 6 p.Conference Paper

16th International Conference on Metalorganic Vapor Phase EpitaxyJONG KYU KIM; KUECH, Thomas F; CANEAU, Catherine et al.Journal of crystal growth. 2013, Vol 370, issn 0022-0248, 358 p.Conference Proceedings

Monte Carlo simulation of growth of hard-sphere crystals on a square patternMORI, Atsushi.Journal of crystal growth. 2011, Vol 318, Num 1, pp 66-71, issn 0022-0248, 6 p.Conference Paper

Steady chirality conversion by grinding crystals—Supercritical and subcritical bifurcationsUWAHA, Makio.Journal of crystal growth. 2011, Vol 318, Num 1, pp 89-92, issn 0022-0248, 4 p.Conference Paper

Light-emitting diodes as chemical sensorsIVANISEVIC, Albena; YEH, Jeng-Ya; MAWST, Luke et al.Nature (London). 2001, Vol 409, Num 6819, issn 0028-0836, p. 476Article

Zipping process on the step bunching in the vicinal surface of the restricted solid-on-solid model with the step attraction of the point contact typeAKUTSU, Noriko.Journal of crystal growth. 2011, Vol 318, Num 1, pp 10-13, issn 0022-0248, 4 p.Conference Paper

Gas-phase chemistry of metalorganic and nitrogen-bearing compoundsWATWE, Ramchandra M; DUMESIC, James A; KUECH, Thomas F et al.Journal of crystal growth. 2000, Vol 221, pp 751-757, issn 0022-0248Conference Paper

Relation between growth and melt shapes of ice crystalsMARUYAMA, Minoru.Journal of crystal growth. 2011, Vol 318, Num 1, pp 36-39, issn 0022-0248, 4 p.Conference Paper

Step bunching induced by flow in solutionSATO, Masahide.Journal of crystal growth. 2011, Vol 318, Num 1, pp 5-9, issn 0022-0248, 5 p.Conference Paper

1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPEWU, T. H; SU, Y. K; CHUANG, R. W et al.Journal of crystal growth. 2013, Vol 370, pp 236-239, issn 0022-0248, 4 p.Conference Paper

Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signsFIKRY, M; REN, Z; MADEL, M et al.Journal of crystal growth. 2013, Vol 370, pp 319-322, issn 0022-0248, 4 p.Conference Paper

Defect reduction in (11―22) semipolar GaN with embedded InN islands on m-plane sapphireJUNG, Chilsung; JONGJIN, Jang; HWANG, Junghwan et al.Journal of crystal growth. 2013, Vol 370, pp 26-29, issn 0022-0248, 4 p.Conference Paper

Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPESOMMER, N; BUSS, R; OHLMANN, J et al.Journal of crystal growth. 2013, Vol 370, pp 191-196, issn 0022-0248, 6 p.Conference Paper

High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy systemUBUKATA, Akinori; YANO, Yoshiki; SHIMAMURA, Hayato et al.Journal of crystal growth. 2013, Vol 370, pp 269-272, issn 0022-0248, 4 p.Conference Paper

InGaN-based solar cells with a tapered GaN structureLIN, Chia-Feng; CHEN, Kuei-Ting; CHEN, Sih-Han et al.Journal of crystal growth. 2013, Vol 370, pp 97-100, issn 0022-0248, 4 p.Conference Paper

Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuitsGUILLAMET, R; LAGAY, N; MOCUTA, C et al.Journal of crystal growth. 2013, Vol 370, pp 128-132, issn 0022-0248, 5 p.Conference Paper