SOME EFFECTS OF WAVE PROPAGATION IN THE GATE OF A MICROWAVE M.E.S.F.E.T.LADBROOKE PH.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 21-22; BIBL. 3 REF.Article

A TOPOLOGICAL ANALYSIS OF ELECTRON TRANSPORT AT N⁺-N CONTACTSLADBROOKE PH.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 10; PP. 5319-5323; BIBL. 13 REF.Article

CHARGE-COUPLED DEVICES - PRINCIPLES AND SOME RECENT APPLICATIONSLADBROOKE PH.1978; MONITOR; AUS; DA. 1978; VOL. 39; NO 7; PP. 109-118; BIBL. 21 REF.Article

REVERSE CURRENT CHARACTERISTICS OF SOME IMPERFECT SCHOTTKY BARRIERSLADBROOKE PH.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 6; PP. 743-749; BIBL. 21 REF.Serial Issue

SOME EFFECTS OF FIELD PERTURBATION UPON CAVITY-RESONANCE AND DISPERSION MEASUREMENTS ON MIC DIELECTRICS.LADBROOKE PH.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 11; PP. 892-903; BIBL. 26 REF.Article

POWER LIMITING DUE TO IMPACT IONISATION IN GAAS MESFETSLADBROOKE PH.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 10; PP. 338-339; BIBL. 4 REF.Article

A NOVEL STANDING-WAVE INDICATOR IN MICROSTRIP.LADBROOKE PH.1974; RADIO ELECTRON. ENGR; G.B.; DA. 1974; VOL. 44; NO 5; PP. 273-280; BIBL. 13 REF.Article

CURRENT SPREADING AT CONTACTS TO PLANAR GUNN DEVICESLADBROOKE PH.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 1; PP. 56-59; BIBL. 14 REF.Serial Issue

DETERMINATION OF COMPLETE CARRIER DENSITY AND DRIFT MOBILITY PROFILES IN THIN SEMICONDUCTOR LAYERSHUANG RS; LADBROOKE PH.1979; I.E.E. J. SOLID STATE ELECTRON. DEVICES; GBR; DA. 1979; VOL. 3; NO 2; PP. 29-32; BIBL. 16 REF.Article

THE PHYSICS OF EXCESS ELECTRON VELOCITY IN SUBMICRON-CHANNEL FET'S.HUANG RS; LADBROOKE PH.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 11; PP. 4791-4798; BIBL. 14 REF.Article

BORON PROFILES USING HEAVY PREDEPOSITIONS FOR P-MOS ENHANCEMENT. MODE DEVICES.STRUDWICK MN; LADBROOKE PH.1977; MONITOR; AUSTRAL.; DA. 1977; VOL. 38; NO 10; PP. 166-168; BIBL. 7 REF.Article

THE USE OF A FOUR-POINT PROBE FOR PROFILING SUB-MICRON LAYERSHUANG RS; LADBROOKE PH.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 9; PP. 1123-1128; BIBL. 12 REF.Article

BORON SEGREGATION DATA FOR D. M.O.S. DEVICES.LADBROOKE PH; STRUDWICK MN.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 5; PP. 128-129; BIBL. 6 REF.Article

FAST CURRENT PULSE M.O.S. DEEP-DEPLETION TECHNIQUE FOR PROFILING THIN EPITAXIAL AND ION-INPLANTED LAYERS.LADBROOKE PH; HUANG RS; BARNARD JA et al.1978; I.E.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1978; VOL. 2; NO 4; PP. 104-108; BIBL. 15 REF.Article

SOME CHARACTERISTICS OF SUB-MICRON CHANNEL ION-IMPLANTED MOSFET'S FOR VLSI CIRCUITSHUANG RS; LADBROOKE PH; BEANLAND DG et al.1980; PROC. I.R.E.E. AUST; AUS; DA. 1980; VOL. 41; NO 3; PP. 85-91; BIBL. 15 REF.Article