Crystal growth by THM of CdIn₂Te₄ and chemical characterizationLAUNAY, J.-C; LESTOURNELLE, F.Journal of crystal growth. 1992, Vol 121, Num 1-2, pp 202-208, issn 0022-0248Article

Enantioselectivity in enediol-hydroxyketone tautomerizationDUHAMEL, L; LAUNAY, J.-C.Tetrahedron letters. 1983, Vol 24, Num 39, pp 4209-4212, issn 0040-4039Article

Multiplexed sensor of dynamic strains using photorefractive wave mixing in the reflection geometryDI GIROLAMO, S; KAMSHILIN, A. A; ROMASHKO, R. V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 70044C.1-70044C.5, issn 0277-786X, isbn 978-0-8194-7204-5Conference Paper

An electron paramagnetic resonance study of vanadium-related defects in CdTe:V:ZnLAUNAY, J. C; ARNOUX, T; VON BARDELEBEN, H. J et al.Semiconductor science and technology. 1997, Vol 12, Num 1, pp 47-50, issn 0268-1242Article

Determination of the mobility and transport properties of photocarriers in Bi₁₂GeO₂₀ by the time-of-flight techniqueENNOURI, A; TAPIERO, M; VOLA, J. P et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2180-2191, issn 0021-8979Article

The dielectric constant measurement of CdIn₂Te₄COUTURIER, G; EF FARJI, A; LESTOURNELLE, F et al.Journal of applied physics. 1991, Vol 70, Num 8, pp 4472-4475, issn 0021-8979Article

Vapor transport and epitaxial growth of Ge in a Ge/GeI₄ closed system by the forced flux methodLAUNAY, J. C; SALDUCCI, C; CADORET, R et al.Journal of crystal growth. 1986, Vol 74, Num 3, pp 559-567, issn 0022-0248Article

A photoluminescence study of vanadium-related defects in n-type, semi-insulating and p-type Cd(Zn)TeDAMMAK, M; VERSTRAETEN, D; ALAYA, S et al.Optical materials (Amsterdam). 2001, Vol 15, Num 4, pp 261-267, issn 0925-3467Article

Experimental determination of physical parameters and analysis of the Bridgman-Stockbarger solidification for the growth AgGaSe₂ crystal in ampoule with conical shapeBRISSON, O; EL GANAOUI, M; SIMONNET, A et al.Journal of crystal growth. 1999, Vol 204, Num 1-2, pp 201-212, issn 0022-0248Article

Photoconductivity studies in vanadium-doped CdTe and Cd_1-xZn_XTeALLACHEN, K; TAPIERO, M; GUELLIL, Z et al.Journal of crystal growth. 1998, Vol 184-85, pp 1142-1146, issn 0022-0248Conference Paper

Defects in photorefractive CdTe:V : an electron paramagnetic resonance studyVON BARDELEBEN, H. J; LAUNAY, J. C; MAZOYER, V et al.Applied physics letters. 1993, Vol 63, Num 8, pp 1140-1142, issn 0003-6951Article

Growth, spectroscopic and photorefractive investigation of vanadium-doped cadmium tellurideLAUNAY, J. C; MAZOYER, V; TAPIERO, M et al.Applied physics. A, Solids and surfaces. 1992, Vol 55, Num 1, pp 33-40, issn 0721-7250Article

Highly efficient diffraction in photorefractive BSO-BGO crystals at large applied fieldsHERRIAU, J. P; ROJAS, D; HUIGNARD, J. P et al.Ferroelectrics (Print). 1987, Vol 75, Num 1-2, pp 271-279, issn 0015-0193Article

Evaluation of photoelectrical properties of Bi doped CdTe crystalsKADYS, A; JARASIUNAS, K; SAUCEDO, E et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S234-S238, SUP1Conference Paper

Dewetted growth and characterisation of high-resistivity CdTeFIEDERLE, M; DUFFAR, T; ROOSEN, G et al.Journal of crystal growth. 2004, Vol 267, Num 3-4, pp 429-435, issn 0022-0248, 7 p.Article

Cu²⁺ in Bi₁₂GeO₂₀ : a tentative electron spin resonance studyCHEVRIER, V; DANCE, J. M; LAUNAY, J. C et al.Journal of materials science letters. 1996, Vol 15, Num 4, pp 363-365, issn 0261-8028Article

An electron paramagnetic resonance and magneto-optical study of vanadium in Zn_xCd_1-xTe:VVON BARDELEBEN, H. J; MIESNER, C; MONGE, J et al.Semiconductor science and technology. 1996, Vol 11, Num 1, pp 58-62, issn 0268-1242Article

Effective trap concentration in photo refractive CdTe:V and ZnCdTe:V crystalsLAMBERT, B; GAUNEAU, M; TRIBOULET, R et al.Optical materials (Amsterdam). 1995, Vol 4, Num 2-3, pp 267-270, issn 0925-3467Conference Paper

Germanium epitaxial growth in closed ampoules. I: experimental results - 1D modellingLAUNAY, J. C; DEBEGNAC, H; ZAPPOLI et al.Journal of crystal growth. 1988, Vol 92, Num 1-2, pp 323-331, issn 0022-0248Article

Determinations of the photorefractive parameters of Bi₁₂GeO₂₀ crystals using transient grating analysisPAULIAT, G; COHEN-JONATHAN, J. M; ALLAIN, M et al.Optics communications. 1986, Vol 59, Num 4, pp 266-271, issn 0030-4018Article

Transient photocurrent induced by nanosecond light pulses in BSO and BGOLESAUX, G; LAUNAY, J. C; BRUN, A et al.Optics communications. 1986, Vol 57, Num 3, pp 166-170, issn 0030-4018Article

Electrical properties of lead-doped LaCoO₃ single crystalsDORDOR, P; JOIRET, S; DOUMERC, J. P et al.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp 321-328, issn 0031-8965Article

Crystal structures of the ionic conductors Bi₄₆M₈O₈₉ (M = P, V) related to the fluorite-type structureDARRIET, J; LAUNAY, J. C; ZUNIGA, F. J et al.Journal of solid state chemistry (Print). 2005, Vol 178, Num 6, pp 1753-1764, issn 0022-4596, 12 p.Article

Implementation and comparative evaluation of various architectures of ultrasonic photorefractive sensorsDE ROSSI, S; DELAYE, Ph; LAUNAY, J. C et al.Optical materials (Amsterdam). 2001, Vol 18, Num 1, pp 45-48, issn 0925-3467Conference Paper

Role of the charge state of deep vanadium impurities and associations of defects in photoelectric and optical properties of semi-insulating CdTe crystalsJARASIÜNAS, K; BASTIENE, L; LAUNAY, J. C et al.Semiconductor science and technology. 1999, Vol 14, Num 1, pp 48-57, issn 0268-1242Article