Applications of plasma etchingLEHMANN, H. W.NATO ASI series. Series E, Applied sciences. 1990, Vol 176, pp 345-375, issn 0168-132XConference Paper

Optimizing deposition parameters of electron beam evaporated TiO₂ filmsLEHMANN, H. W; FRICK, K.Applied optics. 1988, Vol 27, Num 23, pp 4920-4924, issn 0003-6935Article

Technologische Untersuchungen zur rechnergestützten. Konzipierung von spezialisierten Montagearbeitsplätzen in der Klein- und Mittelserienfertigung des Maschinenbaues = Etudes techniques pour la conception assistée de postes de montage spécialisés pour les fabrications en petites et moyennes séries des industries mécaniques = Technological investigations for a computer-aided design of specialized assembly work palces in small and medium series production of machine buildingBINGER, G; LEHMANN, H.-W.Fertigungstechnik und Betrieb. 1985, Vol 35, Num 1, pp 31-34, issn 0015-024XArticle

Micro- and nanoengineering 94LEHMANN, H. W; STAUFER, U; VETTINGER, P et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, issn 0167-9317, 577 p.Conference Proceedings

Sputter deposition of epitaxial waveguiding KNbO₃ thin filmsSCHWYN THÖNY, S; LEHMANN, H. W; GÜNTER, R et al.Applied physics letters. 1992, Vol 61, Num 4, pp 373-375, issn 0003-6951Article

The germanium selenide/polymer bilevel photoresist system ― A reviewHUGGETT, P. G; LEHMANN, H. W.Journal of electronic materials. 1985, Vol 14, Num 3, pp 205-230, issn 0361-5235Article

Waveguiding epitaxial LiNbO₃ layers deposited by radio frequency sputteringSCHWYN, S; LEHMANN, H. W; WIDMER, R et al.Journal of applied physics. 1992, Vol 72, Num 3, pp 1154-1159, issn 0021-8979Article

Mechanism of dry etching of silicon dioxide: a case of direct reactive ion etchingSTEINBRÜCHEL, C; LEHMANN, H. W; FRICK, K et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 1, pp 180-185, issn 0013-4651Article

A throttle valve for automatic pressure control in sputtering and reactive sputter etchingLEHMANN, H. W; CURTIS, B. J; FEHLMANN, R et al.Vacuum. 1984, Vol 34, Num 7, pp 679-681, issn 0042-207XArticle

Hydroxylation of collagen type I : evidence that both lysyl and prolyl residues are overhydroxylated in osteogenesis imperfectaLEHMANN, H. W; RIMEK, D; BODO, M et al.European journal of clinical investigation. 1995, Vol 25, Num 5, pp 306-310, issn 0014-2972Article

0.35 μm pattern fabrication using quartz-etch attenuate phase-shifting mask in an I-line stepper with a 0.50 NA and a 0.60 sigmaWEN-AN LOONG; SHYI-LONG SHY; YUNG-CHI LIN et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 275-278, issn 0167-9317Conference Paper

A single quality factor for electron backscattering from thin filmsMESSINA, G; PAOLETTI, A; SANTANGELO, S et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 183-186, issn 0167-9317Conference Paper

Challenges for 0.35-0.25 μm optical lithographyVAN DEN HOVE, L; RONSE, K.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 357-365, issn 0167-9317Conference Paper

DUV lithography for 0.35 μm CMOS processingVAN DRIESSCHE, V; GOETHALS, A.-M; OP DE BEECK, M et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 243-246, issn 0167-9317Conference Paper

Design and analysis of diffraction mirror optics for EUV projection lithographyFUKUDA, H; TERASAWA, T.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 239-242, issn 0167-9317Conference Paper

Electron beam nanofabrication with self-assembled monolayers of alkylthiols and alkylsiloxanesLERCEL, M. J; REDINBO, G. F; ROOKS, M et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 43-46, issn 0167-9317Conference Paper

Gap control in the fabrication of quantum-effect devices using X-ray nanolithographyBURKHARDT, M; SILVERMAN, S; SMITH, H. I et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 307-310, issn 0167-9317Conference Paper

Micromechanical structures for data storageREILEY, T. C; FAN, L.-S; MAMIN, H. J et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 495-498, issn 0167-9317Conference Paper

Multilayer coated reflective optics for Extreme UV lithographyLOUIS, E; VOORMA, H.-J; KOSTER, N. B et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 235-238, issn 0167-9317Conference Paper

Nanostructures self-assembling from nonequilibrium silver nanophase on conducting nonmetallic substratesRAGOISHA, G. A; GURIN, V. S; ROGACH, A. L et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 51-54, issn 0167-9317Conference Paper

Non-conventional techniques for optical lithographyDÄNDLIKER, R; GRAY, S; CLUBE, F et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 205-211, issn 0167-9317Conference Paper

New KrF and ArF excimer laser for advanced DUV lithographyENDERT, H; PÄTZEL, R; POWELL, M et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 221-224, issn 0167-9317Conference Paper

Proximity correction for high CD accuracy and process toleranceWAAS, T; EISENMANN, H; VÖLLINGER, O et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 179-182, issn 0167-9317Conference Paper

Simulation of single electron circuitsRÖSNER, W; HOFMANN, F; VOGELSANG, T et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 55-58, issn 0167-9317Conference Paper

The impact of polarized illumination on imaging characteristics in optical microlithographyBÖRNIG, K; HENKE, W.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 217-220, issn 0167-9317Conference Paper