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Determination of optical gain and absorption of quantum dots with an improved segmented contact methodXIN, Y.-C; SU, H; VARANGIS, P. M et al.SPIE proceedings series. 2005, pp 49-59, isbn 0-8194-5696-9, 11 p.Conference Paper

Multiquantum well strained-layer lasers with improved low frequency response and very low dampingLESTER, L. F; O'KEEFE, S. S; SCHAFF, W. J et al.Electronics Letters. 1992, Vol 28, Num 4, pp 383-385, issn 0013-5194Article

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Hot carriers and the frequency response of quantum well lasersLESTER, L. F; RIDLEY, B. K.Journal of applied physics. 1992, Vol 72, Num 7, pp 2579-2588, issn 0021-8979Article

Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam EpitaxyROMERO, O. S; ARAGON, A. A; RAHIMI, N et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 926-930, issn 0361-5235, 5 p.Conference Paper

Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devicesTATEBAYASHI, J; NUNTAWONG, N; WONG, P. S et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 7, issn 0022-3727, 073002.1-073002.12Article

Modulation Response of an Injection Locked Quantum-Dash Fabry Perot Laser at 1550nmPOCHET, M; NADERI, N. A; GRILLOT, F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7211, issn 0277-786X, isbn 978-0-8194-7457-5, 721107.1-721107.9Conference Paper

Bistable operation of a two-section 1.3-μm InAs quantum dot laser-absorption saturation and the quantum confined Stark effectXIAODONG HUANG; STINTZ, A; HUA LI et al.IEEE journal of quantum electronics. 2001, Vol 37, Num 3, pp 414-417, issn 0018-9197Article

The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structuresLIU, G. T; STINTZ, A; LI, H et al.IEEE journal of quantum electronics. 2000, Vol 36, Num 11, pp 1272-1279, issn 0018-9197Article

60 GHz low-noise high-electron-mobility transistorsDUH, K. H. G; CHAO, P. C; SMITH, P. M et al.Electronics Letters. 1986, Vol 22, Num 12, pp 647-649, issn 0013-5194Article

Double-interval harmonic mode-locking technique for diverse waveform generationLI, Y; CHIRAGH, F. L; XIN, Y.-C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7616, issn 0277-786X, isbn 978-0-8194-8012-5 0-8194-8012-6, 1Vol, 76160D.1-76160D.9Conference Paper

Frequency-resolved optical gating characterisation of passively modelocked quantum-dot laserXIN, Y.-C; KANE, D. J; LESTER, L. F et al.Electronics Letters. 2008, Vol 44, Num 21, pp 1255-1257, issn 0013-5194, 3 p.Article

Monolithic passively mode-locked lasers using quantum dot or quantum well materials grown on GaAs substratesXIN, Y.-C; STINTZ, A; CAO, H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64681L.1-64681L.10, issn 0277-786X, isbn 978-0-8194-6581-8, 1VolConference Paper

Strain-compensation in closely-stacked quantum dot active regions grown by metal organic chemical vapor depositionNUNTAWONG, N; TATEBAYASHI, J; WONG, P. S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61290E.1-61290E.8, issn 0277-786X, isbn 0-8194-6171-7, 1VolConference Paper

Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAsLESTER, L. F; HWANG, K. C; HO, P et al.IEEE photonics technology letters. 1993, Vol 5, Num 5, pp 511-514, issn 1041-1135Article

Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasersLESTER, L. F; OFFSEY, S. D; RIDLEY, B. K et al.Applied physics letters. 1991, Vol 59, Num 10, pp 1162-1164, issn 0003-6951Article

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Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistorHENDERSON, T; AKSUN, M. I; PENG, C. K et al.IEEE electron device letters. 1986, Vol 7, Num 12, pp 649-651, issn 0741-3106Article

Bandwidth Enhancement in an Injection-Locked Quantum Dot Laser Operating at 1.31-μmNADERI, N. A; POCHET, M; KOVANIS, V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7597, issn 0277-786X, isbn 978-0-8194-7993-8 0-8194-7993-4, 1Vol, 759719.1-759719.12Conference Paper

Linewidth Enhancement Factor and Dynamical Response of an Injection-Locked Quantum-Dot Fabry-Perot Laser at 1310nmPOCHET, M; NADERI, N. A; TERRY, N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7616, issn 0277-786X, isbn 978-0-8194-8012-5 0-8194-8012-6, 1Vol, 76160F.1-76160F.12Conference Paper

Systematic Investigation of the Alpha Parameter Influence on the Critical Feedback Level in QD LasersGRILLOT, F; NADERI, N. A; POCHET, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7211, issn 0277-786X, isbn 978-0-8194-7457-5, 721108.1-721108.10Conference Paper

Multi-section gain-lever quantum dot lasersLI, Y; NADERI, N. A; XIN, Y.-C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 646819.1-646819.7, issn 0277-786X, isbn 978-0-8194-6581-8, 1VolConference Paper

Morphology and relaxation in In_yGa_1-yAs/GaAs multi-layer structuresGRAY, A. L; STINTZ, A; MALLOY, K. J et al.Journal of crystal growth. 2001, Vol 222, Num 4, pp 726-734, issn 0022-0248Article

A 0.25-μm gate-length pseudomorphic HFET with 32-mW output power at 94 GHzSMITH, P. M; LESTER, L. F; PANE-CHANE CHAO et al.IEEE electron device letters. 1989, Vol 10, Num 10, pp 437-439, issn 0741-3106Article