On symmetric invariants of level surfaces near regular pointsMAGNANINI, R.Bulletin of the London Mathematical Society. 1992, Vol 24, pp 565-574, issn 0024-6093, 6Article

A fully nonlinear boundary value problem for the Laplace equation in dimension twoMAGNANINI, R.Applicable analysis (Print). 1990, Vol 39, Num 2-3, pp 185-192, issn 0003-6811, 8 p.Article

The boundary integral method for two-dimensional orthotropic materialsGILBERT, R. P; MAGNANINI, R.Journal of elasticity. 1987, Vol 18, Num 1, pp 61-82, issn 0374-3535Article

An inverse problem for the Helmholtz equationMAGNANINI, R; PAPI, G.Inverse problems. 1985, Vol 1, Num 4, pp 357-370, issn 0266-5611Article

Composition control of GaSbAs alloysBOSACCHI, A; FRANCHI, S; ALLEGRI, P et al.Journal of crystal growth. 1999, Vol 201202, pp 858-860, issn 0022-0248Conference Paper

Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limitGHEZZI, C; MAGNANINI, R; PARISINI, A et al.Solid state communications. 2004, Vol 130, Num 10, pp 647-652, issn 0038-1098, 6 p.Article

Explicit calculation of the solution to Backus' problem with a condition for uniquenessDEL CARMEN JORGE, M; MAGNANINI, R.Journal of mathematical analysis and applications. 1993, Vol 173, Num 2, pp 515-522, issn 0022-247XArticle

Stationary isothermic surfaces and uniformly dense domainsMAGNANINI, R; PRAJAPAT, J; SAKAGUCHI, S et al.Transactions of the American Mathematical Society. 2006, Vol 358, Num 11, pp 4821-4841, issn 0002-9947, 21 p.Article

Assessment of Vegard's law validity in the Ga_1-xAl_xSb/GaSb epitaxial systemGERMINI, F; BOCCHI, C; FERRARI, C et al.Journal of physics. D, Applied physics (Print). 1999, Vol 32, Num 10A, pp A12-A15, issn 0022-3727Article

Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxyBIGNAZZI, A; GRILLI, E; GUZZI, M et al.Journal of crystal growth. 1996, Vol 169, Num 3, pp 450-456, issn 0022-0248Article

Metal-insulator transition induced by the magnetic field in n-type GaSbGHEZZI, C; MAGNANINI, R; PARISINI, A et al.Solid state communications. 2005, Vol 136, Num 2, pp 126-131, issn 0038-1098, 6 p.Article

Pure-bending for a vibrating elastic plate with non-uniform temperatureBUCHANAN, J; GILBERT, R. P; MAGNANINI, R et al.Journal of elasticity. 1988, Vol 20, Num 2, pp 93-112, issn 0374-3535Article

Difusao de Inovaçoes: comentarios em torno de um tema (Diffusion d'innovations: commentaires à propos d'un thème)STRAUCH, L. Manhaes de M; MAGNANINI, R. Lopes da Cruz.Revista brasileira de geografia Rio de Janeiro. 1978, Vol 40, Num 2, pp 131-141Article

Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sourcesBEGOTTI, M; LONGO, M; MAGNANINI, R et al.Applied surface science. 2004, Vol 222, Num 1-4, pp 423-431, issn 0169-4332, 9 p.Article

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAsLONGO, M; MAGNANINI, R; PARISINI, A et al.Journal of crystal growth. 2003, Vol 248, pp 119-123, issn 0022-0248, 5 p.Conference Paper

Concentration dependence of optical absorption in tellurium-doped GaSbGHEZZI, C; MAGNANINI, R; PARISINI, A et al.Semiconductor science and technology. 1997, Vol 12, Num 7, pp 858-866, issn 0268-1242Article

Thermoreflectance study of the direct energy gap of GaSbBELLANI, V; DI LERNIA, S; GEDDO, M et al.Solid state communications. 1997, Vol 104, Num 2, pp 81-84, issn 0038-1098Article

Investigation of GaAs/InGaP superlattices for quantum well solar cellsMAGNANINI, R; TARRICONE, L; PARISINI, A et al.Thin solid films. 2008, Vol 516, Num 20, pp 6734-6738, issn 0040-6090, 5 p.Conference Paper

Infrared reflectance study of n-type GaSb epitaxial layersFERRINI, R; GUIZZETTI, G; PATRINI, M et al.Solid state communications. 1997, Vol 104, Num 12, pp 747-751, issn 0038-1098Article

Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterizationBARALDI, A; GHEZZI, C; MAGNANINI, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 174-178, issn 0921-5107Conference Paper

Optical functions of bulk and epitaxial GaSb from 0.0025 to 6 eVPATRINI, M; GUIZZETTI, G; GALLI, M et al.Solid state communications. 1997, Vol 101, Num 2, pp 93-98, issn 0038-1098Article

Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffractionBOCCHI, C; BOSACCHI, A; FERRARI, C et al.Journal of crystal growth. 1996, Vol 165, Num 1-2, pp 8-14, issn 0022-0248Article

Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxyBARALDI, A; COLONNA, F; GHEZZI, C et al.Semiconductor science and technology. 1996, Vol 11, Num 11, pp 1656-1667, issn 0268-1242Article

Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxyBOSACCHI, A; FRANCHI, S; ALLEGRI, P et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 844-848, issn 0022-0248, 2Conference Paper

Consideraçoès metodologicas para a definiçào de espaços homogêneos: O Estado do Espiritu Santo como exemplificaçâo empirica. (Considérations méthodologiques pour une définition d'espaces homogènes: l'Etat de Espiritu Santo comme éclaircissement empirique)DUARTE, A. CAPDEVILLE; GUIMARAES, M. R. da SILVA; MAGNANINI, R. LOPES DA CRUZ et al.Revista brasileira de geografia Rio de Janeiro. 1980, Vol 42, Num 4, pp 862-877Article