au.\*:("MAWST, L. J")
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Γ effect : key intermodal-discrimination mechanism in arrays of antiguided diode lasersBOTEZ, D; MAWST, L. J.Applied physics letters. 1992, Vol 60, Num 25, pp 3096-3098, issn 0003-6951Article
High-power, diffraction-limited-beam operation from diode-laser phase-locked arrays operating in coupled first-order modesMAWST, L. J; BOTEZ, D; ROTH, T. J et al.Applied physics letters. 1988, Vol 53, Num 14, pp 1236-1238, issn 0003-6951Article
Modal discrimination in leaky-mode (antiguided) arraysHADLEY, G. R; BOTEZ, D; MAWST, L. J et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 4, pp 921-930, issn 0018-9197, 10 p.Article
Resonant leaky-wave coupling in linear arrays of antiguidesBOTEZ, D; MAWST, L. J; PETERSON, G et al.Electronics Letters. 1988, Vol 24, Num 21, pp 1328-1330, issn 0013-5194Article
MOCVD growth of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers for high power applicationsLEE, J. J; MAWST, L. J; BOTEZ, D et al.Journal of crystal growth. 2003, Vol 249, Num 1-2, pp 100-105, issn 0022-0248, 6 p.Article
Modal properties of two-dimensional antiguided vertical-cavity surface-emitting laser arraysDELAI ZHOU; MAWST, L. J; ZHENG DAI et al.IEEE journal of quantum electronics. 2002, Vol 38, Num 6, pp 652-664, issn 0018-9197Article
Simple description of laterally resonant, distributed-feedback-like modes of arrays of antiguidesZMUDZINSKI, C. A; BOTEZ, D; MAWST, L. J et al.Applied physics letters. 1992, Vol 60, Num 9, pp 1049-1051, issn 0003-6951Article
Design optimization of ARROW-type diode lasersMAWST, L. J; BOTEZ, D; ZMUDZINSKI, C et al.IEEE photonics technology letters. 1992, Vol 4, Num 11, pp 1204-1206, issn 1041-1135Article
0.3W CW single-spatial-mode operation from large-core arrow-type diode lasersMAWST, L. J; BOTEZ, D; ZMUDZINSKI, C et al.Electronics Letters. 1992, Vol 28, Num 19, pp 1793-1795, issn 0013-5194Article
High-power, in-phase-mode operation from resonant phase-locked arrays of antiguided diode lasersMAWST, L. J; BOTEZ, D; ROTH, T. J et al.Applied physics letters. 1989, Vol 55, Num 1, pp 10-12, issn 0003-6951, 3 p.Article
High-power, diffraction-limited-beam operation from interferometric phase-locked arrays of AlGaAs/GaAs diode lasersBOTEZ, D; MAWST, L. J; HAYASHIDA, P et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3716-3718, issn 0021-8979Article
Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell applicationKIM, T. W; KUECH, T. F; MAWST, L. J et al.Journal of crystal growth. 2014, Vol 405, pp 87-91, issn 0022-0248, 5 p.Article
Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasersBOTEZ, D; HAYASHIDA, P; MAWST, L. J et al.Applied physics letters. 1988, Vol 53, Num 15, pp 1366-1368, issn 0003-6951Article
Antiresonant reflecting optical waveguide-type, single-mode diode lasersMAWST, L. J; BOTEZ, D; ZMUDZINSKI, C et al.Applied physics letters. 1992, Vol 61, Num 5, pp 503-506, issn 0003-6951Article
Resonant optical transmission and coupling in phase-locked diode laser arrays of antiguides: the resonant optical waveguide arrayBOTEZ, D; MAWST, L. J; PETERSON, G et al.Applied physics letters. 1989, Vol 54, Num 22, pp 2183-2185, issn 0003-6951, 3 p.Article
Ultra-low temperature sensitive deep-well quantum cascade lasers (λ = 4.8 μm) via uptapering conduction band edge of injector regionsSHIN, J. C; MAWST, L. J; BOTEZ, D et al.Electronics letters. 2009, Vol 45, Num 14, pp 741-743, issn 0013-5194, 3 p.Article
Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InPSONG, X; BABCOCK, S. E; PAULSON, C. A et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 2377-2381, issn 0022-0248, 5 p.Article
Two-dimensional surface-emitting leaky-wave coupled laser arraysMAWST, L. J; BOETZ, D; JANSEN, M et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 6, pp 1906-1917, issn 0018-9197Article
1 W diffraction-limited-beam operation of resonant-optical-waveguide diode laser arrays at 0.98μmZMUDZINSKI, C; MAWST, L. J; BOTEZ, D et al.Electronics Letters. 1992, Vol 28, Num 16, pp 1543-1544, issn 0013-5194Article
Injection locking of antiguided resonant optical waveguide arraysJANSEN, M; BOTEZ, D; MAWST, L. J et al.Applied physics letters. 1992, Vol 60, Num 1, pp 26-28, issn 0003-6951Article
Resonant self-aligned-stripe antiguided diode laser arrayMAWST, L. J; BOTEZ, D; ZMUDZINSKI, C et al.Applied physics letters. 1992, Vol 60, Num 6, pp 668-670, issn 0003-6951Article
High performance surface-emitting lasers with 45° intracavity micromirrorsOU, S. S; YANG, J. J; JANSEN, M et al.Applied physics letters. 1991, Vol 58, Num 1, pp 16-18, issn 0003-6951, 3 p.Article
Properties of 'bulk' GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentrationKIM, T. W; FORGHANI, K; MAWST, L. J et al.Journal of crystal growth. 2014, Vol 393, pp 70-74, issn 0022-0248, 5 p.Conference Paper
Simple design of an edge-emitting diode laser for preventing spatial multimoding via thermal lensingNAPARTOVICH, A. P; ELKIN, N. N; VYSOTSKY, D. V et al.Optics letters. 2011, Vol 36, Num 22, pp 4344-4346, issn 0146-9592, 3 p.Article
Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applicationsGARROD, T. J; KIRCH, J; DUDLEY, P et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 68-73, issn 0022-0248, 6 p.Conference Paper
