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OBSERVATION D'ETATS FORTEMENT LOCALISES AU VOISINAGE DU BAS DE LA BANDE DE CONDUCTION DU TELLUREKOSICHKIN YU V; MAZUR YU I; NADEZHDINSKIJ AI et al.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 5; PP. 1346-1351; BIBL. 17 REF.Article

PROPRIETES PHOTOELECTRIQUES DE CDSB P NON DOPEKOSICHKIN YU V; MAZUR YU I; NADEZHDINSKIJ AI et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 6; PP. 1133-1139; BIBL. 11 REF.Article

ETUDE DE LA PHOTOCONDUCTIVITE DU TELLURE LORS D'UNE EXCITATION PAR IMPULSIONSANZIN VB; KOSICHKIN YU V; MAZUR YU I et al.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 2; PP. 377-382; BIBL. 9 REF.Article

INFLUENCE DE LA PRESSION HYDROSTATIQUE SUR LES SPECTRES DE LA PHOTOCONDUCTIVITE DUE AUX IMPURETES DANS LE TELLUREZASAVITSKIJ II; KOSICHKIN YU V; MAZUR YU I et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 1; PP. 69-72; BIBL. 7 REF.Article

Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopyBELYAEV, A. E; STRELCHUK, V. V; NIKOLENKO, A. S et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105011.1-105011.6Article

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structureLIN, A; LIANG, B. L; DOROGAN, V. G et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 7, issn 0957-4484, 075701.1-075701.6Article

Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1_xBix/GaAs heterostructuresMAZUR, Yu I; DOROGAN, V. G; SALAMO, G. J et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 3, issn 0957-4484, 035702.1-035702.9Article

Mechanism of strain-influenced quantum well thickness reduction in GaN/AIN short-period superlatticesKUCHUK, A. V; KLADKO, V. P; PETRENKO, T. L et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 24, issn 0957-4484, 245602.1-245602.8Article

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1―xBix/GaAs heterostructuresMAZUR, Yu I; DOROGAN, V. G; SALAMO, G. J et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 6, issn 0022-3727, 065306.1-065306.8Article

Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray studyKLADKO, V. P; KUCHUK, A. V; MANASREH, M. O et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 2, issn 0022-3727, 025403.1-025403.8Article

Thickness dependence of disorder in pseudomorphic modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructuresKUNETS, Vas P; KISSEL, H; MÜLLER, U et al.Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1035-1038, issn 0268-1242Article

Exchange interaction effect on oscillatory magnetoresistance in n-type Hg1-x-yCdxMnyTe near semimetal-semiconductor transitionHOERSTEL, W; KRAAK, W; MASSELINK, W. T et al.Semiconductor science and technology. 2000, Vol 15, Num 12, pp 1119-1124, issn 0268-1242Article

Photoluminescence excitation due to hot excitons in narrow-gap Hg1-x-yCdxMnyTeTOMM, J. W; MAZUR, Yu. I; LISITSA, M. P et al.Semiconductor science and technology. 1999, Vol 14, Num 2, pp 148-155, issn 0268-1242Article

Transmission of Hg1-x-yCdxMnyTe in the far infraredKRIVEN, S. I; MAZUR, YU. I; TARASOV, G. G et al.Soviet physics. Solid state. 1992, Vol 34, Num 10, pp 1678-1681, issn 0038-5654Article

Peculiarities of interband photoluminescence in the semimagnetic semiconductor Hg1-xMnxTeMAZUR, YU. I; TARASOV, G. G; JÄHNKE, V et al.Infrared physics & technology. 1995, Vol 36, Num 6, pp 929-936, issn 1350-4495Article

Characteristics of the infrared reflection spectra of HgCdMnTe multicomponent solid solutionsKRIVEN, S. I; MAZUR, YU. I; TARASOV, G. G et al.Soviet physics. Solid state. 1992, Vol 34, Num 3, pp 510-513, issn 0038-5654Article

Excitonic magnetoluminescence enhancement in semimagnetic Hg1-x-yCdxMnyTeMAZUR, YU. I; TARASOV, G. G; JÄHNKE, V et al.Semiconductor science and technology. 1996, Vol 11, Num 9, pp 1291-1301, issn 0268-1242Article

Magnetic field enhanced luminescence in diluted narrow gap Hg1-xMnxTeMAZUR, YU. I; RAKITIN, A. S; TARASOV, G. G et al.Infrared physics & technology. 1996, Vol 37, Num 4, pp 517-523, issn 1350-4495Article

Vibrational modes activated by structural disorder in FIR transmission of Hg1-x-yCdxMnyTeMAZUR, YU. I; KRIVEN, S. I; TARASOV, G. G et al.Semiconductor science and technology. 1993, Vol 8, Num 7, pp 1187-1190, issn 0268-1242Article

Lattice dynamics of mixed Gh1-x-yCdxMnySe semimagnetic crystalsGAVALESHKO, N. N; KRIVEN, S. I; LITVINCHUK, A. P et al.Acta physica Polonica. A. 1990, Vol 77, Num 2-3, pp 283-286, issn 0587-4246Article

Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dotsMAZUR, Yu. I; WANG, Zh. M; TARASOV, G. G et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 23, pp 235313.1-235313.8, issn 1098-0121Article

Unusual role of the substrate in droplet-induced GaAs/AIGaAs quantum-dot pairs : Focus on photovoltaics - new frontiersWANG, Zh. M; MAZUR, Yu. I; SABLON, K. A et al.Physica status solidi. Rapid research letters (Print). 2008, Vol 2, Num 6, pp 281-283, issn 1862-6254, 3 p.Article

Spectroscopy of sub-wetting layer states in InAs/GaAs quantum dot bi-layer systemsMAZUR, Yu. I; WANG, Zh. M; KISSEL, H et al.Semiconductor science and technology. 2007, Vol 22, Num 2, pp 86-96, issn 0268-1242, 11 p.Article

Growth and characterization of bilayer InAs/GaAs quantum dot structuresLIANG, B. L; WANG, Zh. M; MAZUR, Yu. I et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 10, pp 2403-2410, issn 1862-6300, 8 p.Article

Microsize defects in InGaAs/GaAs (N111)A/B multilayers quantum dot stacksLYTVYN, P. M; PROKOPENKO, I. V; STRELCHUK, V. V et al.Journal of crystal growth. 2005, Vol 284, Num 1-2, pp 47-56, issn 0022-0248, 10 p.Article

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