Molecular beam epitaxy for high electron mobility modulation-doped two-dimensional electron gasesMELLOCH, M. R.Thin solid films. 1993, Vol 231, Num 1-2, pp 74-85, issn 0040-6090Article

Monolithic NMOS digital integrated circuits in 6H-SiCXIE, W; COOPER, J. A; MELLOCH, M. R et al.IEEE electron device letters. 1994, Vol 15, Num 11, pp 455-457, issn 0741-3106Article

The Kondo effect in an artificial quantum dot moleculeJEONG, H; CHANG, A. M; MELLOCH, M. R et al.Science (Washington, D.C.). 2001, Vol 293, Num 5538, pp 2221-2223, issn 0036-8075Article

Robust infrared gratings in photorefractive quantum wells generated by an above-band-gap laserNOLTE, D. D; WANG, Q; MELLOCH, M. R et al.Applied physics letters. 1991, Vol 58, Num 19, pp 2067-2069, issn 0003-6951Article

Effect of a GaAs buffer layer grown at low substrate temperatures on a high-electron-mobility modulation-doped two-dimensional electron gasMELLOCH, M. R; MILLER, D. C; DAS, B et al.Applied physics letters. 1989, Vol 54, Num 10, pp 943-945, issn 0003-6951Article

Effects of bias and temperature on one-dimensional ballistic transport in a planar double-gate quantum wire transistorWANG, Y; CHOU, S. Y; MELLOCH, M. R et al.Superlattices and microstructures. 1993, Vol 14, Num 2-3, pp 227-230, issn 0749-6036Article

Review of the application of molecular beam epitaxy for high efficiency solar cell researchMELLOCH, M. R.Solar cells. 1991, Vol 30, Num 1-4, pp 313-321, issn 0379-6787, 9 p.Conference Paper

Single-particle lifetime in quasi-one-dimensional systemsDAS, B; BANDYOPADHYAY, S; MELLOCH, M. R et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 3, pp L35-L41, issn 0953-8984Article

Possibility of an excitonic ground state in quantum wellsDATTA, S; MELLOCH, M. R; GUNSHOR, R. L et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2607-2609, issn 0163-1829Article

Controlled diode profiling for GaAs strip-coupled correlatorsMELLOCH, M. R; WAGERS, R. S.IEEE electron device letters. 1984, Vol 5, Num 5, pp 136-138, issn 0741-3106Article

Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO₂/SiC interface : III-V nitrides and silicon carbideDAS, M. K; COOPER, J. A; MELLOCH, M. R et al.Journal of electronic materials. 1998, Vol 27, Num 4, pp 353-357, issn 0361-5235Article

The dependence of effective channel width of quasi-one-dimensional split-gate devices on carrier densityDAS, B; MCGINNIS, S; MELLOCH, M. R et al.Microelectronics journal. 2000, Vol 31, Num 2, pp 117-121, issn 0959-8324Article

Effects of electron-beam-induced damage on leakage currents in back-gated GaAs/GaAlAs devicesDAS, B; SUBRAMANIAM, S; MELLOCH, M. R et al.Semiconductor science and technology. 1993, Vol 8, Num 7, pp 1347-1351, issn 0268-1242Article

Propagation loss of the acoustic pseudosurface wave on (ZXt) 45° GaAsMELLOCH, M. R; WAGERS, R. S.Applied physics letters. 1983, Vol 43, Num 11, pp 1008-1009, issn 0003-6951Article

Self-aligned 6H-SiC MOSFETs with improved current drivePAN, J. N; COOPER, J. A; MELLOCH, M. R et al.Electronics Letters. 1995, Vol 31, Num 14, pp 1200-1201, issn 0013-5194Article

Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiCSHEPPARD, S. T; MELLOCH, M. R; COOPER, J. A et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 7, pp 1257-1264, issn 0018-9383Article

Optical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxyENRIQUE VITURRO, R; MELLOCH, M. R; WOODALL, J. M et al.Applied physics letters. 1992, Vol 60, Num 24, pp 3007-3009, issn 0003-6951Article

Spatial-harmonic gratings at high modulation depths in photorefractive quantum wellsWANG, Q. N; NOLTE, D. D; MELLOCH, M. R et al.Optics letters. 1991, Vol 16, Num 24, pp 1944-1946, issn 0146-9592Article

Single-particle and transport scattering times in a back-gated GaAs/Al_xGa_1-xAs modulation-doped heterostructureDAS, B; SUBRAMANIAM, S; MELLOCH, M. R et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 15, pp 9650-9653, issn 0163-1829Article

Two-wave mixing in photorefractive AlGaAs/GaAs quantum wellsWANG, Q. N; NOLTE, D. D; MELLOCH, M. R et al.Applied physics letters. 1991, Vol 59, Num 3, pp 256-258, issn 0003-6951Article

A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM'sDUNGAN, T. E; COOPER, J. A. JR; MELLOCH, M. R et al.IEEE electron device letters. 1987, Vol 8, Num 5, pp 243-245, issn 0741-3106Article

Long term storage of inversion holes at a superlattice/GaAs interfaceMELLOCH, M. R; QIAN, Q.-D; COOPER, J. A. JR et al.Applied physics letters. 1986, Vol 49, Num 21, pp 1471-1472, issn 0003-6951Article

Multi-day dynamic storage of holes at the AlAs/GaAs interfaceQIAN, Q.-D; MELLOCH, M. R; COOPER, J. A. JR et al.IEEE electron device letters. 1986, Vol 7, Num 11, pp 607-609, issn 0741-3106Article

Proposed structure for large quantum interference effectsDATTA, S; MELLOCH, M. R; BANDYOPADHYAY, S et al.Applied physics letters. 1986, Vol 48, Num 7, pp 487-489, issn 0003-6951Article

Hybrid resonant/near-resonant photorefractive structure : InGaAs/GaAs multiple quantum wellsWANG, Q. N; NOLTE, D. D; MELLOCH, M. R et al.Journal of applied physics. 1993, Vol 74, Num 6, pp 4254-4256, issn 0021-8979Article