DAS RASTERELEKTRONENMIKROSKOP UND EINIGE SEINER ANWENDUNGEN. = LE MICROSCOPE ELECTRONIQUE A BALAYAGE ET QUELQUES UNES DE SES APPLICATIONSMENNIGER H; GRAEF W.1974; BILD U. TON; DTSCH.; DA. 1974; VOL. 27; NO 7; PP. 199-203Article

ON THE INTERACTION BETWEEN CRYSTAL DEFECTS AND IMPURITIES IN SILICON INVESTIGATED BY ELECTRON MICROSCOPIC METHODSMENNIGER H; RAIDT H; GLEICHMANN R et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 1; PP. 173-180; ABS. GER; BIBL. 13 REF.Article

ON THE INFLUENCE OF MICRODEFECTS ON CHARGE CARRIERS IN SILICON.MENNIGER H; RAIDT H; VOIGT G et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 639-643; ABS. ALLEM.; BIBL. 9 REF.Article

SCANNING ELECTRON MICROSCOPIC INVESTIGATIONS OF GAPMENNIGER H; VOIGT G; RAIDT H et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. 407-415; ABS. GER; BIBL. 17 REF.Article

INVESTIGATIONS OF GROWTH DEFECTS IN SOLUTION-GROWN GA_XIN_1.XP WITH A SEM OPERATING IN THE CATHODOLUMINESCENCE MODE.VOIGT G; RAIDT H; PEIBST H et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 36; NO 1; PP. 173-179; ABS. ALLEM.; BIBL. 14 REF.Article

ON REAL STRUCTURE INVESTIGATIONS OF GA_XIN_1-XP BY ELECTRON MICROSCOPIC METHODS.RAIDT H; KASTNER G; MENNIGER H et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 43; NO 1; PP. 167-173; ABS. ALLEM.; BIBL. 6 REF.Article

CHARAKTERISIERUNG DER HOHBRAUMSTRUKTUR VON POROESEM GLAS. = CARACTERISATION DE LA STRUCTURE DES VIDES DANS LE VERRE POREUXPAUL D; JACOBASCH HJ; SCHUMANN U et al.1976; SILIKATTECHNIK; DTSCH.; DA. 1976; VOL. 27; NO 11; PP. 368-369; BIBL. 11 REF.Article

The influence of copper on the change of cathodoluminescence in semi-insulating LEC-GaAs wafers after rapid thermal processingJAHN, U; MENNIGER, H.Physica status solidi. A. Applied research. 1991, Vol 128, Num 1, pp 145-152, issn 0031-8965Article

ADAPTER FUER DAS RASTER-ELEKTRONENMIKROSKOP ZUR SPEKTRALEN MESSUNG DER KATODOLUMINESZENG. = ADAPTEUR POUR LE MICROSCOPE ELECTRONIQUE A BALAYAGE POUR LA MESURE SPECTRALE DE LA CATHODOLUMINESCENCEMENNIGER H; ZSCHEILLE H; RAIDT H et al.1975; EXPER. TECH. PHYS.; DTSCH.; DA. 1975; VOL. 23; NO 1; PP. 91-95; ABS. ANGL.; BIBL. 6 REF.Article

Surface imperfection induced electrical leakage paths in silicide Schottky diodes investigated by SEM/EBIC and AESMENNIGER, H; BERR, M; LANGE, H et al.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp 353-362, issn 0031-8965Article

Zn-doped InGaAsP (1.3 μm) contact layer for an inverted DH laser structureHANSEN, K; PEINER, E; SCHLACHETZKI, A et al.Journal of crystal growth. 1992, Vol 125, Num 3-4, pp 465-476, issn 0022-0248Article

Electrical homogeneity of semi-insulating LEC GaAs improved by post-growth annealingMENNIGER, H; BEER, M; GLEICHMANN, R et al.Physica status solidi. A. Applied research. 1990, Vol 121, Num 1, pp 95-103, issn 0031-8965, 9 p.Article