High-power quantum-dot-based semiconductor disk laserBUTKUS, M; WILCOX, K. G; RAFAILOV, E. U et al.Optics letters. 2009, Vol 34, Num 11, pp 1672-1674, issn 0146-9592, 3 p.Article

A high-power 975 nm tilted cavity laser with a 0.13 nm K-1 thermal shift of the lasing wavelengthSHCHUKIN, V. A; LEDENTSOV, N. N; KRESTNIKOV, I. L et al.Semiconductor science and technology. 2007, Vol 22, Num 9, pp 1061-1065, issn 0268-1242, 5 p.Article

Quantum dot semiconductor lasers with optical feedbackHUYET, G; O'BRIEN, D; KOVSH, A. R et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 345-352, issn 0031-8965, 8 p.Conference Paper

1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxyUSTINOV, V. M; ZHUKOV, A. E; LEDENTSOV, N. N et al.Journal of crystal growth. 2001, Vol 227-28, pp 1155-1161, issn 0022-0248Conference Paper

All Quantum-Dot Based Femtosecond VECSELHOFFMANN, M; SIEBER, O. D; SÜDMEYER, T et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7919, issn 0277-786X, isbn 978-0-8194-8456-7, 79190X.1-79190X.6Conference Paper

Self-biased saturable absorber mirror demonstrating very low saturation fluenceGADJIEV, I. M; RYVKIN, B. S; AVRUTIN, E. A et al.Electronics letters. 2010, Vol 46, Num 1, pp 74-75, issn 0013-5194, 2 p.Article

Tilted cavity concept for the high-power wavelength stabilized diode lasersKARACHINSKY, L. Ya; NOVIKOV, I. I; SHCHUKIN, V. A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7138, pp 713804.1-713804.6, issn 0277-786X, isbn 978-0-8194-7379-0 0-8194-7379-0, 1VolConference Paper

Broad-area InAs/GaAs quantum dot lasers incorporating Intermixed passive waveguideGORDEEV, N. Yu; TAN, W. K; BRYCE, A. C et al.Electronics Letters. 2007, Vol 43, Num 1, pp 29-30, issn 0013-5194, 2 p.Article

InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength rangeMALEEV, N. A; KRESTNIKOV, I. L; TSATSULNIKOV, A. F et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 803-806, issn 0370-1972Conference Paper

1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistanceLEDENTSOV, N. N; KOVSH, A. R; SOSHNIKOV, I. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61330S.1-61330S.12, issn 0277-786X, isbn 0-8194-6175-X, 1VolConference Paper

High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production systemWILK, A; KOVSH, A. R; MIKHRIN, S. S et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 335-341, issn 0022-0248, 7 p.Conference Paper

Edge and surface-emitting tilted cavity lasersLEDENTSOV, N. N; SHCHUKIN, V. A; SHERNYAKOV, Yu. M et al.SPIE proceedings series. 2005, pp 130-146, isbn 0-8194-5696-9, 17 p.Conference Paper

Wavelength-stabilized tilted cavity quantum dot laserLEDENTSOV, N. N; SHCHUKIN, V. A; MIKHRIN, S. S et al.Semiconductor science and technology. 2004, Vol 19, Num 10, pp 1183-1188, issn 0268-1242, 6 p.Article

High performance narrow stripe quantum-dot lasers with etched waveguideOUYANG, D; LEDENTSOV, N. N; BIMBERG, D et al.Semiconductor science and technology. 2003, Vol 18, Num 12, pp L53-L54, issn 0268-1242Article

120°C 20 Gbit/s operation of 980 nm VCSELMUTIG, A; FIOL, G; HOPFER, F et al.Electronics Letters. 2008, Vol 44, Num 22, pp 1305-1306, issn 0013-5194, 2 p.Article

MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter sectionBLOKHIN, S. A; KARACHINSKY, L. Ya; KOVSH, A. R et al.Journal of crystal growth. 2007, Vol 301-302, pp 945-950, issn 0022-0248, 6 p.Conference Paper

Engineering of the radiative recombination rate in quantum dots coupled to the tilted cavity waveguide modeKRYZHANOVSKAYA, N. V; ZIMMER, P; LEDENTSOV, N. N et al.Semiconductor science and technology. 2006, Vol 21, Num 2, pp 162-166, issn 0268-1242, 5 p.Article

20 Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dotsHOPFER, F; MUTIG, A; LEDENTSOV, N. N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 635003.1-635003.7, issn 0277-786X, isbn 0-8194-6445-7, 1VolConference Paper

High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasersMIKHRIN, S. S; KOVSH, A. R; ALFEROV, Zh I et al.Semiconductor science and technology. 2005, Vol 20, Num 5, pp 340-342, issn 0268-1242, 3 p.Article

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wellsKOVSH, A. R; ZHUKOV, A. E; PIKHTIN, N. A et al.SPIE proceedings series. 2003, pp 353-356, isbn 0-8194-4824-9, 4 p.Conference Paper

0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dotsMIKHRIN, S. S; ZHUKOV, A. E; VOLOVIK, B. V et al.Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1061-1064, issn 0268-1242Article

Small-signal cross-gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μmKIM, J; LAEMMLIN, M; MEUER, C et al.Physica status solidi. B. Basic research. 2009, Vol 246, Num 4, pp 864-867, issn 0370-1972, 4 p.Article

The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dotsBLOKHIN, S. A; SAKHAROV, A. V; LEDENTSOV, N. N et al.Semiconductor science and technology. 2007, Vol 22, Num 3, pp 203-208, issn 0268-1242, 6 p.Article

Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasersMI, Z; FATHPOUR, S; BHATTACHARYA, P et al.SPIE proceedings series. 2005, pp 60-71, isbn 0-8194-5696-9, 12 p.Conference Paper

Characteristics of high-performance 1.0 μm and 1.3 μm quantum dot lasers : Impact of p-doping and tunnel injectionFATHPOUR, S; MI, Z; CHAKRABARTI, S et al.DRC : Device research conference. 2004, pp 156-157, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper