Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density ConditionsMIYAKE, Masataka; NAKASHIMA, Junichi; MIURA-MATTAUSCH, Mitiko et al.IEICE transactions on electronics. 2012, Vol 95, Num 10, pp 1682-1688, issn 0916-8524, 7 p.Article

Modeling of SiC IGBT Turn-Off Behavior Valid for Over 5-kV Circuit Simulation : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONSMIYAKE, Masataka; UENO, Masaya; FELDMANN, Uwe et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 622-629, issn 0018-9383, 8 p.Article

HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONSMIYAKE, Masataka; NAVARRO, Dondee; FELDMANN, Uwe et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 571-579, issn 0018-9383, 9 p.Article

HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET CircuitsORITSUKI, Yasunori; YOKOMICHI, Masahiro; MIURA-MATTAUSCH, Mitiko et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2671-2678, issn 0018-9383, 8 p.Article

Modeling of Trench-Gate Type HV-MOSFETs for Circuit SimulationIIZUKA, Takahiro; FUKUSHIMA, Kenji; TANAKA, Akihiro et al.IEICE transactions on electronics. 2013, Vol 96, Num 5, pp 744-751, issn 0916-8524, 8 p.Article

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation : Fundamentals and applications of advanced semiconductor devicesMIYAKE, Masataka; HORI, Daisuke; TSUKADA, Toshiro et al.IEICE transactions on electronics. 2009, Vol 92, Num 5, pp 608-615, issn 0916-8524, 8 p.Article

Modeling of the Impurity-Gradient Effect in High-Voltage Laterally Diffused MOSFETs : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONSIIZUKA, Takahiro; FUKUSHIMA, Kenji; TANAKA, Akihiro et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 684-690, issn 0018-9383, 7 p.Article

The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONSJÜRGEN MATTAUSCH, Hans; MIYAKE, Masataka; IIZUKA, Takahiro et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 653-661, issn 0018-9383, 9 p.Article

Compact Modeling of Expansion Effects in LDMOSHZUKA, Takahiro; SAKUDA, Takashi; ORITSUKI, Yasunori et al.IEICE transactions on electronics. 2012, Vol 95, Num 11, pp 1817-1823, issn 0916-8524, 7 p.Article

A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysisNAVARRO, Dondee; TAKEDA, Youichi; MIYAKE, Masataka et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 2025-2034, issn 0018-9383, 10 p.Article

HiSIM2 : Advanced MOSFET model valid for RF circuit simulationMIURA-MATTAUSCH, Mitiko; SADACHIKA, Norio; MATTAUSCH, Hans Jürgen et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 1994-2007, issn 0018-9383, 14 p.Article

Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO₂ interface defectsPESIC, Iliya; NAVARRO, Dondee; MIYAKE, Masataka et al.Solid-state electronics. 2014, Vol 101, pp 126-130, issn 0038-1101, 5 p.Conference Paper

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias ConditionsCHENYUE MA; MATTAUSCH, Hans Jürgen; MIURA-MATTAUSCH, Mitiko et al.IEICE transactions on electronics. 2013, Vol 96, Num 10, pp 1339-1347, issn 0916-8524, 9 p.Article

Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS DevicesTANAKA, Akihiro; ORITSUKI, Yasunori; KIKUCHIHARA, Hideyuki et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 7, pp 2072-2080, issn 0018-9383, 9 p.Article